E. Castán

发表

Rie-induced damage in MOS structures

J. Barbolla, L. Bailón, A. D. Dios, 1990 .

Thermal emission processes of DX centres in AlxGa1−xAs:Si

R. Pinacho, J. Barbolla, S. Dueñas, 1997 .

Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures

I. Mártil, G. G. Díaz, S. Dueñas, 1998 .

Characterization of the Electrical Damage due to Polysilicon RIE ( SF 6 + Cl2 Plasma ) Etching

E. Cabruja, J. Barbolla, L. Bailón, 1992 .

Conductance Transients Study of Slow Traps in Al/SiN x :H/Si and Al/SiN x :H/InP Metal-Insulator-Semiconductor Structures

J. Barbolla, I. Mártil, S. Dueñas, 1997 .

Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

R. Pinacho, J. Barbolla, S. Dueñas, 1999 .

Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

J. M. Martín, R. Pinacho, J. Barbolla, 1998 .

Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication

J. Barbolla, I. Mártil, S. Dueñas, 1999 .

Deep‐level transient spectroscopy and electrical characterization of ion‐implanted p‐n junctions into undoped InP

Ignacio Mártil, Germán González-Díaz, J. M. Martin, 1995 .

Characterization of the EL2 center in GaAs by optical admittance spectroscopy

J. Barbolla, S. Dueñas, L. Bailón, 1990 .

Dopant level freeze‐out and nonideal effects in 6H–SiC epilayer junctions

R. Pinacho, J. Barbolla, L. Pelaz, 1996 .

Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric

J. Barbolla, S. Dueñas, E. Castán, 2001 .

Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs

R. Pinacho, J. Barbolla, S. Dueñas, 1997 .

Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

I. Mártil, G. G. Díaz, S. Dueñas, 1998 .

Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

J. Barbolla, S. Dueñas, J. Montserrat, 1994 .

A study of metal‐oxide‐semiconductor capacitors fabricated on SF6 and SF6+Cl2 reactive‐ion‐etched Si

E. Cabruja, J. Barbolla, E. Castán, 1992 .

Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

R. Pinacho, J. Barbolla, S. Dueñas, 1997 .

Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

R. Pinacho, J. Barbolla, I. Mártil, 1997 .