R. Meaudre

发表

Use of a small-voltage electrical response to measure sodium motion in rf sputtered SiO2 films

M. Meaudre, R. Meaudre, A. Deguin, 1979 .

Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films

M. Meaudre, R. Meaudre, R. Butté, 2003 .

A. F. Morral, M. Meaudre, R. Meaudre, 2002 .

Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements

Jean-Paul Kleider, M. Gauthier, Christophe Longeaud, 1999 .

Midgap density of states in hydrogenated polymorphous silicon

Jean-Paul Kleider, Christophe Longeaud, P. Roca i Cabarrocas, 1999 .

Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

P. Cabarrocas, J. Kleider, C. Bazin, 2006 .

Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

J. Kleider, M. Meaudre, R. Meaudre, 2005 .

Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors

M. Meaudre, R. Meaudre, 2004 .

Structural properties and recombination processes in hydrogenated polymorphous silicon

O. Marty, P. Cabarrocas, M. Meaudre, 2003 .

Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents

O. Marty, M. Meaudre, R. Meaudre, 2002 .

Relaxation of electrons following trapping in the space-charge-limited conduction regime of n + -i-n + hydrogenated amorphous silicon structures

M. Meaudre, R. Meaudre, 2002 .

Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n+-i-n+ structures; the role of light exposure and annealing

M. Meaudre, R. Meaudre, 2001 .

Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C

O. Marty, P. Cabarrocas, M. Meaudre, 2000 .

Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films

R. Meaudre, 1987 .

Metastable effects in conductivity of undoped a-Si:H: coplanar and sandwich configurations, influence of adsorbate layer

M. Meaudre, R. Meaudre, P. Jensen, 1990 .

Kinetics of defect creation by pulsed laser illumination in hydrogenated amorphous silicon films deposited from pure silane and from silane-helium mixtures

P. Cabarrocas, M. Meaudre, R. Meaudre, 1993 .

Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silane

P. Cabarrocas, M. Meaudre, R. Meaudre, 1993 .

Capacitive effects in insulators or semiconductors. Influence of the density of states in the Gap

M. Meaudre, R. Meaudre, 1976 .

Wide optical gap, undoped, photoconductive a-SixN1-x:H Prepared by D.C. Sputtering

J. Tardy, R. Meaudre, 1983 .

Influence of nitrogen incorporation on the density of gap states in amorphous hydrogenated silicon

M. Meaudre, R. Meaudre, 1987 .

Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds

J. Tardy, M. Meaudre, R. Meaudre, 1986 .

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

J. Tardy, R. Meaudre, 1981 .

Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium-silane mixtures

M. Meaudre, R. Meaudre, S. Vignoli, 1996 .

Thermal annealing of light‐induced defects in p‐i‐p and n‐i‐n hydrogenated amorphous silicon structures: Influence of hole and electron injection

M. Meaudre, R. Meaudre, S. Vignoli, 1995 .

Thermal annealing of light-induced defects in hydrogenated amorphous silicon: Evidence for hole-induced annealing

M. Meaudre, R. Meaudre, S. Vignoli, 1994 .

Phenomenological model for equilibrium and metastable defects in undoped hydrogenated amorphous silicon

R. Meaudre, 1994 .

Metastable effects induced by thermal quenching in undoped amorphous silicon

M. Meaudre, R. Meaudre, P. Jensen, 1991 .

Metastable effects in the DC conductivity of hydrogenated amorphous germanium

M. Meaudre, R. Meaudre, C. Godet, 1991 .

Structure of amorphous hydrogenated silicon-nitrogen alloys studied by Fourier transform infrared spectroscopy

R. Meaudre, P. V. Huong, J. L. Vuotto, 1986 .

Absence of thermal quenching effects in undoped amorphous silicon deposited by the pecvd of he - diluted silane

P. Cabarrocas, M. Meaudre, R. Meaudre, 1991 .

Argon dilution of silane as an alternative to hydrogen dilution for stable and high efficiency silicon thin films solar cells

P. Chaudhuri, R. Meaudre, C. Longeaud, 2004 .

Electronic properties of Erbium doped amorphous silicon

J. Kleider, M. Meaudre, R. Meaudre, 2001 .

Thermoelectric power in undoped hydrogenated polymorphous silicon

M. Meaudre, R. Meaudre, R. Butté, 2000 .

Kinetics of defect creation in hydrogenated amorphous silicon by light pulses

M. Meaudre, R. Meaudre, S. Vignoli, 1993 .

Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

R. Brüggemann, P. Cabarrocas, J. Kleider, 2002 .

Bombardment with energetic hydrogen atoms during the sputter deposition of amorphous hydrogenated silicon

J. Tardy, R. Meaudre, 1984 .

Influence of substrate bias on the optical properties of amorphous hydrogenated silicon films prepared by sputtering

J. Tardy, R. Meaudre, 1983 .

Electrical transport in RF-sputtered SiO2 films: a review

M. Meaudre, R. Meaudre, 1984 .

DC current transport in iron-implanted MgO single crystals

A. Perez, R. Meaudre, 1988 .

The discontinuity in the conductivity characteristics of undoped a-Si:H: statistical shift or metastability?

M. Meaudre, R. Meaudre, P. Jensen, 1990 .

The kink in the conductivity characteristics of undoped a-Si:H : a comprehensive picture

R. Meaudre, P. Jensen, 1990 .

The preexponential factor of the electrical conductivity of undoped amorphous silicon

M. Meaudre, R. Meaudre, C. Godet, 1989 .

Thermal-equilibrium processes and electronic transport in undoped hydrogenated amorphous silicon

G. Guiraud, M. Meaudre, R. Meaudre, 1988 .

Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon

Jean-Paul Kleider, Christophe Longeaud, P. Roca i Cabarrocas, 1998 .

Some electronic and metastability properties of a new nanostructured material: Hydrogenated polymorphous silicon

Jean-Paul Kleider, Christophe Longeaud, P. Roca i Cabarrocas, 1999 .

The pre-exponential factor in the conductivity of undoped hydrogenated amorphous silicon

R. Meaudre, 1985 .

Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon

M. Meaudre, R. Meaudre, 1987 .

Bipolaron and single-polaron contributions to a.c. conduction in r.f. sputtered SiO2 films

M. Meaudre, R. Meaudre, 1982 .

A.c. conduction in r.f. sputtered SiO2 films

M. Meaudre, R. Meaudre, 1979 .

X-ray and HRTEM structural studies of bulk nanoporous carbon materials produced from carbides

R. N. Kyutt, O. Marty, A. M. Danishevskiǐ, 2002 .

Electrical response of materials with recombining space charge

D. Franceschetti, R. Meaudre, J. Macdonald, 1977 .

Transient and alternating currents in insulators or semiconductors: influence of generation and recombination of carriers

R. Meaudre, G. Mesnard, 1974 .

Electrical response for solids with recombining space charge

R. Meaudre, 1975 .

DC conduction in diamond-like carbon films obtained by low-energy cluster beam deposition

J. P. Perez, V. Dupuis, P. Mélinon, 1995 .