P. Moens

发表

A novel hot-hole injection degradation model for lateral nDMOS transistors

R. Degraeve, G. Groeseneken, M. Tack, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

G. Groeseneken, G. Van den bosch, P. Moens, 2004, IEEE Transactions on Electron Devices.

A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

M. Tack, P. Moens, J. Mertens, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Electron trapping and interface trap generation in drain extended PMOS transistors

M. Tack, P. Moens, F. Bauwens, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Effects of hot spot hopping and drain ballasting in integrated vertical DMOS devices under TLP stress

S. Bychikhin, D. Pogany, P. Moens, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Hot hole degradation effects in lateral nDMOS transistors

R. Degraeve, G. Groeseneken, M. Tack, 2004, IEEE Transactions on Electron Devices.

Anomalous BTI effects in n-type integrated power transistors

B. Desoete, P. Moens, J. Cano, 2006, IEEE Electron Device Letters.

Charge trapping effects and interface state generation in a 40 V lateral resurf pDMOS transistor

G. Van den bosch, P. Moens, F. Bauwens, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Dynamics of integrated vertical DMOS transistors under 100-ns TLP stress

M. Tack, S. Bychikhin, D. Pogany, 2005, IEEE Transactions on Electron Devices.

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

M. Alam, D. Varghese, P. Moens, 2010, IEEE Transactions on Electron Devices.

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

M. Uren, Martin Kuball, S. Karboyan, 2017, IEEE Transactions on Electron Devices.

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

M. Meneghini, G. Meneghesso, E. Zanoni, 2017, IEEE Transactions on Electron Devices.

“ Leaky Dielectric ” Model for the Suppression of Dynamic R ON in Carbon Doped AlGaN / GaN HEMTs

M. Uren, Martin Kuball, S. Karboyan, 2022 .

High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors

M. Meneghini, G. Meneghesso, E. Zanoni, 2016 .

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

M. Meneghini, G. Meneghesso, E. Zanoni, 2017 .

Characterization of dynamic SOA of power MOSFETs limited by electrothermal breakdown

G. Groeseneken, G. Van den bosch, P. Moens, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

M. Uren, Martin Kuball, S. Karboyan, 2015, IEEE Electron Device Letters.

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

M. Uren, M. Meneghini, G. Meneghesso, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Breakthroughs for 650-V GaN Power Devices: Stable high-temperature operations and avalanche capability

M. Tack, P. Moens, E. De Backer, 2015, IEEE Power Electronics Magazine.

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

M. Tack, P. Moens, P. Coppens, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Capacitive behaviour in Super Junction trench MOSFET devices

D. Flores, P. Moens, I. Cortes, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

Hot carrier effects in trench-based integrated power transistors

B. Desoete, M. Tack, P. Moens, 2009, 2009 IEEE International Reliability Physics Symposium.

μ-Raman Validated Stress-Enhanced Mobility in XtreMOS Transistors

I. De Wolf, B. Desoete, M. Tack, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Stress-Induced Mobility Enhancement for Integrated Power Transistors

I. De Wolf, M. Tack, P. Moens, 2007, 2007 IEEE International Electron Devices Meeting.

Theoretical analysis of XtreMOS™ power transistors

M. Tack, P. Moens, J. Roig, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

M. Tack, P. Moens, F. Bauwens, 2006, 2006 International Electron Devices Meeting.

Plasma process-induced charging during PECVD overlay nitride deposition

W. Dobbelaere, L. Jastrzebski, P. Moens, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

Enhancing the robustness of a multiple floating field-limiting ring termination by introducing a buffer layer

D. Flores, P. Moens, J. Roig, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Differential Variable Base Charge Pumping ($\Delta-\text{CP}$) for SiO2/SiC Interface Characterization

A. Constant, P. Moens, F. Allerstam, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

M. Domeij, L. Schepper, P. Moens, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, Microelectron. Reliab..

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

M. Meneghini, G. Meneghesso, E. Zanoni, 2018, IEEE Transactions on Electron Devices.

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

M. Uren, Martin Kuball, S. Karboyan, 2017, IEEE Transactions on Electron Devices.

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

G. Meneghesso, M. Domeij, C. de Santi, 2021, Journal of Applied Physics.

On-Chip Dynamic Gate-Voltage Waveform Sampling in a 200-V GaN-on-SOI Power IC

M. S. Zaman, O. Trescases, P. Moens, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.

An Ultrafast and Latch-Up Free Lateral IGBT with Hole Diverter for Junction-Isolated Technologies

J. Doutreloigne, P. Moens, B. Bakeroot, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Using the Self Aligned Field Implant to Design High Voltage Devices in Sub-µm CMOS Technologies

M. Vermandel, M. Tack, J. Doutreloigne, 2000, 30th European Solid-State Device Research Conference.

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

M. Meneghini, G. Meneghesso, E. Zanoni, 2020, Microelectronics Reliability.

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

G. Meneghesso, M. Meneghini, S. Gerardin, 2019, IEEE Transactions on Electron Devices.

Trapping induced parasitic effects in GaN-HEMT for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015, IEEE Transactions on Electron Devices.

Reliability Aspects of 650-V-Rated GaN Power Devices

P. Moens, A. Banerjee, A. Constant, 2017 .

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, Microelectron. Reliab..

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Peter Moens, Matteo Meneghini, Benoit Bakeroot, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.

Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process

M. S. Zaman, O. Trescases, P. Moens, 2022, 2022 IEEE Applied Power Electronics Conference and Exposition (APEC).

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

M. Meneghini, G. Meneghesso, E. Zanoni, 2019, Applied Physics Letters.

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability

Peter Moens, Arno Stockman, P. Moens, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Smart Power Devices Nanotechnology

Gaudenzio Meneghesso, Peter Moens, Mikael Östling, 2017 .

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS

Geert Van den bosch, Peter Moens, G. V. D. Bosch, 2008, Microelectron. Reliab..

Characterization of Total Safe Operating Area of Lateral DMOS Transistors

P. Moens, G. Van den bosch, G. Van den bosch, 2006, IEEE Transactions on Device and Materials Reliability.

Two-stage Hot Carrier Degradation of LDMOS Transistors.

P. Moens, F. Bauwens, M. Thomason, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Competing hot carrier degradation mechanisms in lateral n-type DMOS transistors

P. Moens, G. Groeseneken, G. Van den Bosch, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors

P. Moens, G. Van den bosch, D. Bolognesi, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Spatial distribution of interface traps in DeMOS transistors

P. Moens, F. Bauwens, B. Vlachakis, 2004, IEEE Electron Device Letters.

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations

Filip Bauwens, Peter Moens, P. Moens, 2004, Microelectron. Reliab..

β-Gallium oxide power electronics

O. Bierwagen, V. Mehrotra, S. Ringel, 2022, APL Materials.

An Industrial 650V GaN DHEMT Cascode Technology

Filip Bauwens, Peter Moens, Marnix Tack, 2014 .

Lifetime modeling of intrinsic gate oxide breakdown at high temperature

Peter Moens, Piet Vanmeerbeek, Ward De Ceuninck, 2007, Microelectron. Reliab..

Study of Time-Dependent Dielectric Breakdown on Gate Oxide Capacitors at High Temperature

P. Moens, W. De Ceuninck, G. Lekens, 2007, 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

A. Paccagnella, M. Meneghini, G. Meneghesso, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT

M. S. Zaman, O. Trescases, P. Moens, 2022, IEEE Transactions on Power Electronics.

Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

M. S. Zaman, O. Trescases, P. Moens, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform

M. S. Zaman, O. Trescases, P. Moens, 2020, 2020 IEEE Symposium on VLSI Technology.

Record-low on-Resistance for 0.35 μm based integrated XtreMOSTM Transistors

M. Tack, P. Moens, J. Baele, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Self-Heating Driven VthShifts in Integrated VDMOS Transistors

M. Tack, P. Moens, H. De Vleeschouwer, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

M. Meneghini, G. Meneghesso, E. Zanoni, 2019, Microelectronics Reliability.

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

M. Meneghini, G. Meneghesso, P. Moens, 2021, IEEE Transactions on Device and Materials Reliability.

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

G. Meneghesso, M. Meneghini, M. Tack, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Gaudenzio Meneghesso, Antonio Gnudi, Peter Moens, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Gassot, M. Tack, P. Moens, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs

G. Meneghesso, C. de Santi, P. Moens, 2022, Microelectronics Reliability.

Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs

T. Grasser, M. Meneghini, C. D. Santi, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature

M. Meneghini, G. Meneghesso, E. Zanoni, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

M. S. Zaman, O. Trescases, P. Moens, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

G. Meneghesso, M. Meneghini, P. Moens, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

M. Meneghini, G. Meneghesso, P. Moens, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

Peter Moens, Matteo Meneghini, Carlo De Santi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

UltiMOS: A local charge-balanced trench-based 600V super-junction device

M. Tack, J. Baele, H. De Vleeschouwer, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors

Gaudenzio Meneghesso, A. Nardo, Enrico Zanoni, 2018, 2019 IEEE International Reliability Physics Symposium (IRPS).

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

Negative dynamic Ron in AlGaN/GaN power devices

G. Meneghesso, M. Meneghini, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs

E. Goovaerts, H. Vrielinck, P. Moens, 2023, Materials Science Forum.

Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

M. Uren, M. Kuball, S. Karboyan, 2016 .

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

M. Domeij, P. Moens, F. Allerstam, 2022, Materials Science Forum.

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors

Gaudenzio Meneghesso, Peter Moens, Matteo Meneghini, 2015, 2015 IEEE International Reliability Physics Symposium.

Future Trends in Intelligent Interface Technologies for 42V Battery Automotive Applications

M. Tack, P. Moens, B. Bolognesi, 2002, 32nd European Solid-State Device Research Conference.

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

A. Constant, H. Ziad, M. Tack, 2016 .

Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

P. Moens, B. Bakeroot, J. Doutreloigne, 2008, IEEE Transactions on Electron Devices.