Kuo-Ming Wu

发表

Anomalous Hot-Carrier-Induced Increase in Saturation-Region Drain Current in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

C.M. Liu, J.F. Chen, S. Hsu, 2008, IEEE Transactions on Electron Devices.

Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors

C.M. Liu, J.F. Chen, Tsung-Yi Huang, 2008, IEEE Electron Device Letters.

Impact of hot-hole injection on the characteristics of High-Voltage MOS transistors

C.M. Liu, J.F. Chen, J.R. Lee, 2008, 2008 13th International Symposium on Electrets.

WITH THICK GATE OXIDE

Y. Su, S. Hsu, Jone F. Chen, 2005 .

Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide

Y. Su, J.F. Chen, S. Hsu, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Chun-Hung Liu, Jone F. Chen, Shiang-Yu Chen, 2008 .

On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

C.M. Liu, J.F. Chen, Shiang-Yu Chen, 2008, IEEE Electron Device Letters.

An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors

J. Shih, K. Wu, J.F. Chen, 2009, IEEE Transactions on Device and Materials Reliability.

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Yu-Cheng Lin, Y. Su, Y. Lin, 2007 .

Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors

Chun-Hung Liu, Jone F. Chen, Shiang-Yu Chen, 2009 .

Mechanism and Improvement of On-Resistance Degradation Induced by Avalanche Breakdown in Lateral DMOS Transistors

C.M. Liu, J.F. Chen, Tsung-Yi Huang, 2008, IEEE Transactions on Electron Devices.

Dynamic Turn-On Mechanism of the n-MOSFET Under High-Current Stress

J.F. Chen, Kuo-Ming Wu, Dao-Hong Yang, 2008, IEEE Electron Device Letters.

Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS Transistors

C. Lien, R. Liou, Kuo-Ming Wu, 2015, IEEE Transactions on Electron Devices.

Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

S. Chang, Y. Su, Hsin-Chuan Wang, 2002 .

Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Kuo-Ming Wu, C. M. Liu, Jone F. Chen, 2009, 2009 10th International Symposium on Quality Electronic Design.

off-State Avalanche-Breakdown-Induced on-Resistance Degradation in Lateral DMOS Transistors

Kuo-Ming Wu, J.F. Chen, Tsung-Yi Huang, 2007, IEEE Electron Device Letters.

Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors

Yan-Kuin Su, Kuo-Ming Wu, J.F. Chen, 2007, 2007 IEEE International Conference on Integrated Circuit Design and Technology.