J. Goo

发表

Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

H. Hwang, Hyungsoon Shin, D. Ju, 1994 .

Investigation of strained Si/SiGe devices by MC simulation

C. Jungemann, B. Meinerzhagen, J. Goo, 2004 .

An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs

Jung-Suk Goo, Ho-Yup Kwon, Hyungsoon Shin, 1995 .

Charge to breakdown mechanism of thin ONO films

J. Goo, M. Park, Dae-Gwan Khang, 1990 .

Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS

Zhiping Yu, R. Dutton, Chang-hoon Choi, 2000 .

Metal gate NMOSFETs with TaSiN/TaN stacked electrode fabricated by a replacement (damascene) technique

P. Besser, M. Lin, J. Goo, 2003, 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).

Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS Devices

A. Marathe, V. Pham, J. Goo, 2007, IEEE Electron Device Letters.

Strained silicon NMOS with nickel-silicide metal gate

S. Ahmed, Qi Xiang, Jung-Suk Goo, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

High frequency noise in CMOS low noise amplifiers

Jung-Suk Goo, J. Goo, 2001 .

Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates

M.-R. Lin, Z. Krivokapic, W. Maszara, 2002, Digest. International Electron Devices Meeting,.

Statistical Compact Modeling and Si Verification Methodology

Jung-Suk Goo, Zhi-Yuan Wu, Ciby Thuruthiyil, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Extraction of speculative SOI MOSFET models using self-heating-free targets

Jung-Suk Goo, Zhi-Yuan Wu, Qiang Chen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs

Tran Ly, Zhi-Yuan Wu, Qiang Chen, 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

Field effect transistor and method of forming a fet

J. Goo, Q. Xiang, 2004 .

Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables

Xin Li, Bo Yu, Zhiyuan Wu, 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference.

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

Robert W. Dutton, Zhiping Yu, Hiroshi Iwai, 2000 .

Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures

Hyunsang Hwang, Jung-Suk Goo, Ho-Yup Kwon, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

Anomalous hot carrier degradation of nMOSFET's at elevated temperatures

Hyunsang Hwang, Jung-Suk Goo, Ho-Yup Kwon, 1995 .

Anomalous hot carrier degradation of nMOSFET's at elevated temperatures

J. Goo, H. Kwon, Hyunsang Hwang, 1995, IEEE Electron Device Letters.

A noise optimization technique for integrated low-noise amplifiers

Robert W. Dutton, Zhiping Yu, Hee-Tae Ahn, 2002, IEEE J. Solid State Circuits.

Issues in high frequency noise simulation for deep submicron MOSFETs

Robert W. Dutton, Zhiping Yu, Francois Danneville, 2000 .

Design Methodology for Power-Constrained Low Noise RF Circuits

Robert W. Dutton, Zhiping Yu, Hee-Tae Ahn, 2001 .

A new leakage component caused by the interaction of residual stress and the relative position of poly-Si gate at isolation edge

J. Goo, Hyeokjae Lee, Y. Huh, 1995, Proceedings of International Electron Devices Meeting.

Shallow source/drain extension effects on external resistance in sub-0.1 /spl mu/m MOSFETs

Zhiping Yu, R. Dutton, Chang-hoon Choi, 2000 .