D. Donoval

发表

Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test

J. Marek, D. Donoval, M. Petrus, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

Organic Thin Film Transistor degradation under sunlight exposure

N. Wrachien, J. Kováč, A. Cester, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Impact of repetitive UIS on modern GaN power devices

J. Marek, D. Donoval, A. Chvála, 2016, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).

Power P-GaN HEMT Under Single and Multi-Pulse UIS Conditions

J. Marek, D. Donoval, A. Chvála, 2018, 2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).

Degradation processes in AlGaN/GaN HEMTs under high drain-bias off-state stress

P. Kordos, D. Donoval, J. Kováč, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

Impact Of Repetitive UIS And SC Stress On Degradation Of Power SIC TrenchMosfets

P. Spánik, J. Marek, D. Donoval, 2020, 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).

Effects of positive and negative constant voltage stress on organic TFTs

G. Meneghesso, J. Jakabovic, D. Bari, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs

G. Meneghesso, J. Jakabovic, D. Bari, 2012, IEEE Transactions on Nuclear Science.

Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

G. Meneghesso, J. Jakabovic, D. Bari, 2011, IEEE Transactions on Nuclear Science.

2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures

D. Donoval, A. Chvála, A. Vrbický, 2006 .

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

J. Kováč, D. Gregušová, P. Kordos, 2008 .

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

S. Delage, J. Kováč, J. Jacquet, 2019, Journal of Electronic Packaging.

3-D device and circuit electrothermal simulations of power integrated circuit including package

J. Marek, D. Donoval, A. Chvála, 2016, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).

Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including package

J. Marek, D. Donoval, A. Chvála, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

F. Schreiber, K. Broch, D. Donoval, 2012 .

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

B. Ściana, D. Radziewicz, M. Tlaczala, 2008 .

Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs

G. Vanko, I. Kostic, T. Lalinsky, 2011 .

Investigation of defects in GaN HFET structures by electroluminescence

D. Donoval, A. Šatka, J. Priesol, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

High-throughput analysis of bulk and contact conductance of polymer layers on electrodes

O. Wolfbeis, A. Koch, V. Mirsky, 2004 .

Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

A. Vescan, P. Kordos, M. Heuken, 2011 .

Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions

J. Marek, D. Donoval, A. Chvála, 2020, 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).

PERFORMANCE OF AlGaN / GaN HETEROSTRUCTURE FIELD – EFFECT TRANSISTORS AT HIGHER AMBIENT TEMPERATURES

J. Kováč, D. Gregušová, P. Kordos, 2008 .

SIMS depth profile characterisation of InAlN/GaN structures

F. Uherek, M. Heuken, D. Donoval, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

J. Kováč, F. Uherek, P. Kordos, 2008, 2008 International Conference on Advanced Semiconductor Devices and Microsystems.

Modeling and simulation of surface generation-recombination in Schottky diodes

D. Donoval, J. Racko, V. Drobny, 1998, ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).

A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts☆

D. Donoval, P. Tove, R. Harman, 1989 .

Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells

J. Kováč, M. Mikolasek, J. Marek, 2014 .

Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices

J. Marek, D. Donoval, A. Chvála, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

Trap-assisted tunnelling current in MIM structures

F. Schwierz, M. Mikolasek, R. Granzner, 2011 .

Barrier heights to silicon, of ruthenium and its silicide

C. Petersson, L. Stolt, H. Norde, 1982 .

Photo-electrical properties of thin ZnO:Al films

F. Uherek, D. Donoval, B. Rheinlander, 1998, ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).

Photocurrents in double-layer organic field-effect transistors

J. Kováč, D. Donoval, J. Jakabovic, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

MODELING AND CHARACTERIZATION OF IN0.12AL0.88N/GAN HEMTS AT ELEVATED TEMPERATURES

S. Selberherr, J. Kováč, V. Palankovski, 2013 .

A N HEMT S AT ELEVATED TEMPERATURES

S. Selberherr, J. Kováč, V. Palankovski, 2013 .

Identification of the crystalline-phases in thin pentacene layers by Raman spectroscopy

E. Dobročka, D. Donoval, J. Jakabovic, 2012 .

Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion

F. Schreiber, K. Broch, E. Dobročka, 2010 .

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

J. Kováč, M. Mikolasek, M. Tlaczala, 2013 .

Characterisation of titanium disilicide thin films

Alexander Satka, Daniel Donoval, Marián Veselý, 2006, Microelectron. J..

Photogenerated charge carriers in double-layer organic field-effect transistor

J. Kováč, D. Donoval, J. Jakabovic, 2013 .

Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices

J. Kováč, M. Mikolasek, E. Garduño-Nolasco, 2014 .

Influence of surface oxidation on plasmon resonance in monolayer of gold and silver nanoparticles

F. Uherek, E. Dobročka, D. Donoval, 2012 .

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures

Daniel Donoval, D. Radziewicz, R. Srnánek, 2008, Microelectron. J..

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

J. Geurts, B. Ściana, D. Radziewicz, 2006 .

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

J. Geurts, B. Ściana, D. Radziewicz, 2004 .

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

Daniel Donoval, Jaroslav Kováč, Miroslav Mikolášek, 2014, Photonics Europe.

Investigation of Nickel Silicide Contact Layers for Power Diodes

D. Donoval, A. Šatka, A. Vincze, 2006, 2006 International Conference on Advanced Semiconductor Devices and Microsystems.

A contribution to the analysis of the I–V characteristics of Schottky structures

D. Donoval, V. Drobny, Marek Luza, 1998 .

Analysis of I-V measurements on PtSi-Si Schottky structures in a wide temperature range

D. Donoval, M. Barus, D. Donoval, 1991 .

Characterization and evaluation of current transport properties of power SiC Schottky diode

J. Marek, D. Donoval, A. Chvála, 2021, Materials Today: Proceedings.

Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure

Gaudenzio Meneghesso, Daniel Donoval, Jaroslav Kovác, 2012, Microelectron. Reliab..

Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

G. Meneghesso, J. Jakabovic, D. Bari, 2012, IEEE Transactions on Electron Devices.

Low-energy UV effects on Organic Thin-Film-Transistors

G. Meneghesso, J. Jakabovic, D. Bari, 2011, 2011 International Reliability Physics Symposium.

Organic TFT with SiO2-parylene gate dielectric stack and optimized pentacene growth temperature

N. Wrachien, J. Kováč, M. Meneghini, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics

N. Wrachien, J. Kováč, M. Meneghini, 2009, 2009 IEEE International Reliability Physics Symposium.

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

Juraj Marek, Daniel Donoval, P. Beno, 2008 .

Self-Heating in GaN Transistors Designed for High-Power Operation

Dionyz Pogany, Gottfried Strasser, Frank Brunner, 2014, IEEE Transactions on Electron Devices.

Au-NiO nanocrystalline thin films for sensor application

S. Capone, P. Siciliano, J. Huran, 2007 .

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Alexander Satka, Juraj Marek, Ales Chvála, 2017, Microelectron. Reliab..

Plasmonic properties of Au-Ag nanoparticles: Distinctiveness of metal arrangements by optical study

F. Uherek, D. Donoval, M. Weis, 2014 .

Revised theory of current transport through the Schottky structure

D. Donoval, J. Racko, A. Grmanová, 1992 .

Characterisation of electrical properties of AlGaN/GaN Schottky diode at very high temperature

A. Chvala, J. Marek, D. Donoval, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Neural Network for Electrothermal Circuit Model of SiC Power MOSFET

J. Marek, D. Donoval, A. Chvála, 2020, International Conference on Advanced Semiconductor Devices and Microsystems.

Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics

N. Wrachien, J. Kováč, A. Cester, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy

Daniel Donoval, D. Radziewicz, R. Srnánek, 2008, Microelectron. J..

Micro-Raman study of photoexcited plasma in GaAs bevelled structures

J. Geurts, B. Ściana, D. Radziewicz, 2005 .

A self consistent approach to Fowler plots

D. Donoval, P. Tove, J. D. S. Pires, 1984 .

A new approach to the determination of MS-barrier heights from photoelectric data and/or an alternative way to determine the value of the Richardson constant

D. Donoval, P. Tove, J. D. S. Pires, 1982 .

Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

F. Uherek, D. Donoval, D. Allsopp, 2013 .

A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes

D. Donoval, J. Racko, V. Drobny, 1998 .

Surface and interface analysis of iodine‐doped pentacene structures for OTFTs

F. Schreiber, E. Dobročka, D. Donoval, 2011 .

Noise in the InAlN/GaN HEMT transistors

J. Kováč, D. Donoval, A. Šatka, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Electrical properties of 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl) naphthalene organic transistors: Effect of preparation conditions

D. Donoval, M. Putala, J. Jakabovic, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Alexander Satka, Ales Chvála, Daniel Donoval, 2012, Microelectron. Reliab..

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Alexander Satka, Juraj Marek, Daniel Donoval, 2019, J. Circuits Syst. Comput..

Neural Network for Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Gates

Alexander Satka, Juraj Marek, Ales Chvála, 2019, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS).

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

Juraj Marek, Daniel Donoval, Michal Blaho, 2018, IEEE Transactions on Electron Devices.

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Juraj Marek, Daniel Donoval, Stefaan Decoutere, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

DEVSIM, A new simulator for better understanding of internal semiconductor structure behavior

D. Donoval, J. Racko, J. Hromcová, 1992 .

Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

J. Kováč, E. Morvan, P. Kordos, 2011 .

MAGNETIC FET-BASED ON-CHIP CURRENT SENSOR FOR CURRENT TESTING OF LOW-VOLTAGE CIRCUITS

Daniel Donoval, Martin Donoval, D. Donoval, 2008 .

Analysis of device geometry on the ruggedness of power DMOS transistor supported by 3-D modeling and simulation

J. Marek, D. Donoval, A. Chvála, 2006, 2006 International Conference on Advanced Semiconductor Devices and Microsystems.