R. Minixhofer

发表

Hot carrier stress degradation modes in p-type high voltage LDMOS transistors

J. M. Park, H. Enichlmair, S. Carniello, 2009, 2009 IEEE International Reliability Physics Symposium.

TCAD Modeling of Negative Bias Temperature Instability

T. Grasser, H. Enichlmair, R. Minixhofer, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations

I. Starkov, T. Grasser, C. Jungemann, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Investigation of NBTI Recovery During Measurement

Tibor Grasser, Hubert Enichlmair, Rainer Minixhofer, 2006 .

Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects]

S. Selberherr, T. Grasser, C. Heitzinger, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

EXTRACTION OF MATERIAL PARAMETERS BASED ON INVERSE MODELING OF THREE-DIMENSIONAL INTERCONNECT STRUCTURES

S. Selberherr, T. Grasser, C. Heitzinger, 2003 .

Cost Effective High-Voltage IC Technology Implemented in a Standard CMOS Process

J. M. Park, R. Minixhofer, M. Schrems, 2011 .

An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices

P. Hadley, F. Roger, B. Loeffler, 2016, IEEE Transactions on Electron Devices.

Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors

T. Grasser, M. Waltl, H. Enichlmair, 2022, Microelectronics Reliability.

Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures

Tibor Grasser, Oliver Triebl, Robert Entner, 2007, Microelectron. Reliab..

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors

Martin Knaipp, Hubert Enichlmair, Rainer Minixhofer, 2008, IET Circuits Devices Syst..

Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V

Jong Mun Park, V. Vescoli, R. Minixhofer, 2006, 2006 European Solid-State Device Research Conference.

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectron. Reliab..

Hot-carrier degradation modeling using full-band Monte-Carlo simulations

E. Seebacher, T. Grasser, H. Ceric, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, IEEE Transactions on Electron Devices.

A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

K. Chatty, D. Harame, E. Seebacher, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Optimizing a sub-wavelength grating lens for large incidence angles

Rainer Minixhofer, Lukas Elsinger, Peter Hadley, 2015, SPIE NanoScience + Engineering.

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

B. Govoreanu, I. Radu, B. Parvais, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Impact of single-defects on the variability of CMOS inverter circuits

T. Grasser, B. Stampfer, M. Waltl, 2021, Microelectronics Reliability.

Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Siegfried Selberherr, Peter Evanschitzky, Lado Filipovic, 2015 .

Effects of sidewall scallops on open tungsten TSVs

R. L. de Orio, S. Selberherr, L. Filipovic, 2014, 2014 IEEE International Reliability Physics Symposium.

TCAD as an integral part of the semiconductor manufacturing environment

R. Minixhofer, R. Minixhofer, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

Stefan Holzer, Siegfried Selberherr, Tibor Grasser, 2004, Microelectron. J..

Investigations on the high current behavior of lateral diffused high-voltage transistors

E. Seebacher, R. Minixhofer, M. Knaipp, 2004, IEEE Transactions on Electron Devices.