Hong Wu

发表

On-Resistance Degradations for Different Stress Conditions in High-Voltage pLEDMOS Transistor With Thick Gate Oxide

Weifeng Sun, Longxing Shi, Y. Yi, 2007, IEEE Electron Device Letters.

A new hot-carrier degradation mechanism in high voltage nLEDMOS transistors

Weifeng Sun, Longxing Shi, Y. Yi, 2008, 2008 26th International Conference on Microelectronics.

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Lester F. Eastman, Hai Lu, William J. Schaff, 2000 .

Misfit dislocations in low-temperature grown Ge/Si heterostructures

S. Oktyabrsky, R. Vispute, J. Narayan, 1995 .

Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells

W. Schaff, M. Furis, A. Cartwright, 2002 .

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Lester F. Eastman, Hai Lu, William J. Schaff, 2001 .

GaN/SiC heterojunction bipolar transistors

Lester F. Eastman, Oliver Ambacher, Choudhury Jayant Praharaj, 2000 .

Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

W. Schaff, Hai Lu, Hong Wu, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

Lester F. Eastman, Daniel Hofstetter, William J. Schaff, 2003 .

Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

W. Rieger, R. Dimitrov, O. Ambacher, 1998 .

Size effect on SrRuO3/BaTiO3/SrRuO3 ferroelectric ultrathin film capacitor

W. Shen, H. Xing, Hong Wu, 2009 .

Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

Jagdish Narayan, R. D. Vispute, K. Jagannadham, 1995 .

High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

R. Vispute, J. Narayan, Hong Wu, 1995 .

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Esther Baumann, Daniel Hofstetter, Lester F. Eastman, 2010, Proceedings of the IEEE.

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Esther Baumann, Fabrizio R Giorgetta, Daniel Hofstetter, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(1 0 0) systems

Hong Wu, S. Cheng, H. Hsu, 2011 .

Tunneling effects and intersubband absorption in AlN/GaN superlattices

Esther Baumann, Lester F. Eastman, Daniel Hofstetter, 2005 .

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

R. Vispute, J. Narayan, Hong Wu, 1995 .

Nonuniformities in GaN/AlN quantum wells

L. Eastman, W. Schaff, J. Silcox, 2003 .