V. Obreja

发表

Experimental Drain I-V Characteristics of Power MOS Transistors and the Nature of Reverse Leakage Current of Oxide Passivated PN Junctions

C. Codreanu, E. Manea, V. Obreja, 2006, 2006 International Semiconductor Conference.

An experimental investigation on the nature of reverse current of silicon power pn-junctions

V.V.N. Obreja, V. Obreja, 2002 .

On the performance of supercapacitors with electrodes based on carbon nanotubes and carbon activated material—A review

V. Obreja, Vasile V.N. Obreja, 2008 .

The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature

V.V.N. Obreja, V. Obreja, 2005, 2005 International Semiconductor Device Research Symposium.

Supercapacitors Based on Carbon Nanomaterials

V. Obreja, 2015 .

Application of GAs to optimization of heat transfer in micro-channels

C. Codreanu, V. Obreja, I. Codreanu, 2005, EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005..

Leakage current voltage dependence and performance of power semiconductor devices in the breakdown (avalanche) region

V.V. Obreja, V. Obreja, 2008, 2008 IEEE Power Electronics Specialists Conference.

Advance in the assembling and packaging of supercapacitor modules for higher performance

V. Obreja, 2008, 2008 2nd Electronics System-Integration Technology Conference.

On the performance of commercial supercapacitors as storage devices for renewable electrical energy sources

V. Obreja, Vasile V.N. Obreja, 2007 .

On the Technology of Present-Day Manufactured Supercapacitors

P. Svasta, V.V.N. Obreja, C. Ionescu, 2006, 2006 1st Electronic Systemintegration Technology Conference.

On the irradiation lattice damage effect upon the electrical characteristics of a semiconductor p-n junction

V. Obreja, 1994 .

Reverse Leakage Current Instability of Power Fast Switching Diodes Operating at High Junction Temperature

V.V.N. Obreja, C. Codreanu, K.I. Nuttall, 2005, 2005 IEEE 36th Power Electronics Specialists Conference.

Supercapacitors Specialities - Materials Review

V. Obreja, 2014 .

The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

V.V.N. Obreja, V. Obreja, 2007, 2007 International Semiconductor Device Research Symposium.

The Voltage Dependence of Reverse Current of Semiconductor PN Junctions and its Distribution over the Device Area

V.V.N. Obreja, V. Obreja, 2007, 2007 International Semiconductor Conference.

On the high temperature operation of high voltage power devices

V.V.N. Obreja, K. I. Nuttall, V. Obreja, 2002, Proceedings. International Semiconductor Conference.

Interface states and related surface currents in SiC junctions

Marioara Avram, C. Voitincu, C. Codreanu, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic

Octavian Buiu, C. Codreanu, V. V. N. Obreja, 2011, Microelectron. Reliab..