J. Roig

发表

Degradation analysis in SOI LDMOS transistors with steep retrograde doping profile and source field plate

J. Millán, D. Flores, I. Cortes, 2005, Conference on Electron Devices, 2005 Spanish.

Continuous analytic I-V model for surrounding-gate MOSFETs

B. Iñíguez, J. Suñé, J. Pallarès, 2004, IEEE Electron Device Letters.

Short-circuit capability in p-GaNHEMTs and GaNMISHEMTs

X. Jordà, M. Vellvehí, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

X. Jordà, M. Vellvehí, M. Tack, 2017, IEEE Electron Device Letters.

Overcoming switching limits in silicon power MOSFETs with silicon-based solutions

F. Bauwens, J. Roig, 2017 .

Modeling of non-uniform heat generation in LDMOS transistors

Jaume Roig, Jose Rebollo, Salvador Hidalgo, 2005 .

Heat Generation Analysis in SOI LDMOS Power Transistors

D. Flores, S. Hidalgo, J. Rebollo, 2005 .

A physical investigation of large-signal dynamic output capacitance and energy loss in GaN-on-Si power HEMTs at high-frequency applications

J. Plummer, J. Roig, G. Zulauf, 2020, 2020 IEEE Energy Conversion Congress and Exposition (ECCE).

An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs

J. Plummer, J. Roig, G. Zulauf, 2019, 2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL).

Origin of Anomalous $C_{\mathrm {OSS}}$ Hysteresis in Resonant Converters With Superjunction FETs

Jaume Roig, Filip Bauwens, F. Bauwens, 2015, IEEE Transactions on Electron Devices.

Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration

Diego G. Lamar, Jaume Roig, Filip Bauwens, 2019, IEEE Transactions on Power Electronics.

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

H. A. Hamid, B. Iñíguez, J. Pallarès, 2005, IEEE Transactions on Electron Devices.

Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET

Jaume Roig, Benjamin Iniguez, David Jiménez, 2006 .

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

D. Flandre, B. Iñíguez, J. Roig, 2007 .

Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs

D. Jimenez, J. Roig, B. Iniguez, 2007, IEEE Transactions on Electron Devices.

New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs

B. Iñíguez, O. Moldovan, J. Roig, 2007, 2007 Spanish Conference on Electron Devices.

Capacitive behaviour in Super Junction trench MOSFET devices

D. Flores, P. Moens, I. Cortes, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

Hot carrier effects in trench-based integrated power transistors

B. Desoete, M. Tack, P. Moens, 2009, 2009 IEEE International Reliability Physics Symposium.

μ-Raman Validated Stress-Enhanced Mobility in XtreMOS Transistors

I. De Wolf, B. Desoete, M. Tack, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Stress-Induced Mobility Enhancement for Integrated Power Transistors

I. De Wolf, M. Tack, P. Moens, 2007, 2007 IEEE International Electron Devices Meeting.

Theoretical analysis of XtreMOS™ power transistors

M. Tack, P. Moens, J. Roig, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Thin film SOI and SOS LDMOS structures with Linear Doping Profile and enlarged field plate

J. Millán, D. Flores, I. Cortes, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Enhancing the robustness of a multiple floating field-limiting ring termination by introducing a buffer layer

D. Flores, P. Moens, J. Roig, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

On-Chip Dynamic Gate-Voltage Waveform Sampling in a 200-V GaN-on-SOI Power IC

M. S. Zaman, O. Trescases, P. Moens, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Super-Junction PIN Photodiode to Integrate Optoelectronic Integrated Circuits in Standard Technologies: A Numerical Study

J. Roig, F. Morancho, E. Stefanov, 2007 .

Novel techniques for reducing self-heating effects in silicon-on-insulator power devices

M. Vellvehí, J. Millán, D. Flores, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process

M. S. Zaman, O. Trescases, P. Moens, 2022, 2022 IEEE Applied Power Electronics Conference and Exposition (APEC).

Deep trench MOSFET structures study for a 1200 Volts application

L. Theolier, F. Morancho, P. Dubreuil, 2007, 2007 European Conference on Power Electronics and Applications.

A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plate

Jose Rebollo, J. Millan, David Flores, 2004 .

Switching performance of 65 V vertical N-channel FLYMOSFETs

Karine Isoird, Yann Weber, Jean-Michel Reynes, 2008, Microelectron. J..

On the feasibility of superjunction thick-SOI power LDMOS transistors for RF base station applications

I. Cortes, Jaume Roig, Jose Rebollo, 2007 .

A numerical study of scaling issues for trench power MOSFETs

I. Cortes, Jose Rebollo, David Flores, 2005 .

An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT

M. S. Zaman, O. Trescases, P. Moens, 2022, IEEE Transactions on Power Electronics.

Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

M. S. Zaman, O. Trescases, P. Moens, 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform

M. S. Zaman, O. Trescases, P. Moens, 2020, 2020 IEEE Symposium on VLSI Technology.

Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

M. S. Zaman, O. Trescases, P. Moens, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

On-resistance analysis in trench power MOSFETs with fully depletion between trenches

B. Iñíguez, D. Flores, S. Hidalgo, 2005, Conference on Electron Devices, 2005 Spanish.

Non-uniform temperature and heat generation in thin-film SOI LDMOS with uniform drift doping

I. Cortes, Jose Rebollo, David Flores, 2006 .

Improved current filament control during Zener diode zapping

Filip Bauwens, Jaume Roig, J. Lebon, 2012, Microelectron. Reliab..

Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

J. Rebollo, Salvador Hidalgo, José Millán, 2004, Microelectron. J..

Study of novel techniques for reducing self-heating effects in SOI power LDMOS

M. Vellvehi, Jaume Roig, Jose Rebollo, 2002 .

Reduction of self-heating effect on SOIM devices

J. Rebollo, Miquel Vellvehí, José Millán, 2002, Microelectron. Reliab..

Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile

David Flores, Salvador Hidalgo, Jesús Urresti-Ibañez, 2005, Microelectron. Reliab..

Efficiency of SOI-like structures for reducing the thermal resistance in thin-film SOI power LDMOSFETs

J. Millán, D. Flores, J. Roig, 2004, IEEE Electron Device Letters.

Internal self-damping optimization in trench power FETs for high-frequency conversion

Jaume Roig, Filip Bauwens, Renaud Gillon, 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.