S. Tyaginov

发表

MODELING OF HOT-CARRIER DEGRADATION BASED ON THOROUGH CARRIER TRANSPORT TREATMENT

T. Grasser, S. Tyaginov, Y. Wimmer, 2014 .

Physics-Based Hot-Carrier Degradation Modeling

I. Starkov, T. Grasser, C. Jungemann, 2011 .

Physics-Based Hot-Carrier Degradation Models

J. M. Park, I. Starkov, T. Grasser, 2011 .

Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure

S. V. Gastev, A. F. Shulekin, I. Grekhov, 2005 .

Modeling of hot-carrier degradation: Physics and controversial issues

T. Grasser, S. Tyaginov, 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs

T. Grasser, M. Bina, S. Tyaginov, 2014 .

Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs

T. Grasser, H. Reisinger, B. Kaczer, 2015, IEEE Transactions on Electron Devices.

The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects

T. Grasser, M. Waltl, K. Puschkarsky, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Karl Rupp, Tibor Grasser, Jacopo Franco, 2014, IEEE Transactions on Electron Devices.

Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme

T. Grasser, H. Enichlmair, S. Tyaginov, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

A. F. Shulekin, I. Grekhov, S. Tyaginov, 2006 .

Radiative recombination in a silicon MOS tunnel structure

A. F. Shulekin, I. Grekhov, S. Tyaginov, 2004 .

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

A. De Keersgieter, A. Chasin, D. Linten, 2021, Microelectronics Reliability.

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities

T. Grasser, M. Waltl, G. Rzepa, 2020, IEEE Transactions on Electron Devices.

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

T. Grasser, B. Kaczer, J. Franco, 2018 .

Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach

T. Grasser, B. Kaczer, J. Franco, 2017, IEEE Electron Device Letters.

On the effect of interface traps on the carrier distribution function during hot-carrier degradation

T. Grasser, B. Kaczer, J. Franco, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).

On the limits of applicability of drift-diffusion based hot carrier degradation modeling

T. Grasser, S. Tyaginov, M. Jech, 2016 .

Physics-Based Modeling of Hot-Carrier Degradation

S. Tyaginov, 2015 .

(Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs

T. Grasser, B. Kaczer, J. Franco, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Impact of gate oxide thickness variations on hot-carrier degradation

J. M. Park, I. Starkov, T. Grasser, 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band monte-carlo simulations

I. Starkov, T. Grasser, C. Jungemann, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

A. F. Shulekin, S. Tyaginov, M. Vexler, 2005 .

D. Linten, A. Spessot, B. Kaczer, 2020, Micromachines.

Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

A. De Keersgieter, A. Chasin, D. Linten, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

A. Chasin, D. Linten, T. Grasser, 2019, IEEE Electron Device Letters.

On Correlation between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability

D. Linten, A. Spessot, B. Kaczer, 2019, 2019 IEEE International Integrated Reliability Workshop (IIRW).

Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

I. Starkov, T. Grasser, C. Jungemann, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Border Trap Based Modeling of SiC Transistor Transfer Characteristics

T. Grasser, G. Rzepa, G. Pobegen, 2018, 2018 International Integrated Reliability Workshop (IIRW).

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

H. Mertens, A. Chasin, B. Kaczer, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

A. F. Shulekin, S. Tyaginov, M. Vexler, 2006 .

Influence of insulator thickness nonuniformity on the switching of the Al/SiO2/n-Si tunnel MOS structure at reverse bias

A. F. Shulekin, I. Grekhov, S. Tyaginov, 2006 .

Soft breakdown as a cause of current drop in an MOS tunnel structure

A. F. Shulekin, S. Tyaginov, M. Vexler, 2004 .

Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer

T. Grasser, S. Tyaginov, M. Vexler, 2009 .

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

R. Ritzenthaler, A. Chasin, N. Horiguchi, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

On the importance of electron–electron scattering for hot-carrier degradation

T. Grasser, B. Kaczer, J. Franco, 2014 .

Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

R. Degraeve, B. Kaczer, I. De Wolf, 2021, IEEE Electron Device Letters.

Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1−<

A. Makarov, S. Tyaginov, M. Vexler, 2022, Physical Review Materials.

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part II: Theory

T. Grasser, M. Waltl, G. Rzepa, 2019, IEEE Transactions on Electron Devices.

Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations

T. Grasser, W. Gos, V. Sverdlov, 2009, 2009 13th International Workshop on Computational Electronics.

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Ang Diing Shenp, V. Fedorov, S. Tyaginov, 2013 .

Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate

Tibor Grasser, Viktor Sverdlov, Wolfgang Gös, 2009, Microelectron. Reliab..

Description of Si-O bond breakage using pair-wise interatomic potentials under consideration of the whole crystal

T. Grasser, W. Gos, V. Sverdlov, 2009, 2009 IEEE International Reliability Physics Symposium.

Statistics of SiO bond-breakage rate variations induced by OSiO angle fluctuations

T. Grasser, V. Sverdlov, S. Tyaginov, 2009 .

Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics

T. Grasser, W. Gos, V. Sverdlov, 2009 .

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

T. Grasser, M. Waltl, C. Jungemann, 2021, Physical Review Applied.

Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

T. Grasser, A. Shluger, S. Tyaginov, 2019, Physical Review B.

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

H. Mertens, R. Ritzenthaler, A. Chasin, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

A. Chasin, B. Kaczer, G. Groeseneken, 2023, IEEE Electron Device Letters.

High insulating quality CaF2 pseudomorphic films on Si(111)

S. Tyaginov, M. Vexler, K. Tsutsui, 2007 .

Al/SiO 2 (2.0-2.5 nm)/ p -Si tunnel junction as a light emitter

S. V. Gastev, A. F. Shulekin, I. Grekhov, 1999 .

Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

S. V. Gastev, A. F. Shulekin, I. Grekhov, 2000 .

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

B. Parvais, B. Kaczer, D. Linten, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Degradation effects in the one-band-tunneling Au/CaF2/n-Si(111) MIS structures

S. Tyaginov, M. Vexler, A. Banshchikov, 2008 .

The post-damage behavior of a MOS tunnel emitter transistor

I. V. Grekhov, A. F. Shulekin, S. E. Tyaginov, 2006, Microelectron. Reliab..

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

A. F. Shulekin, I. Grekhov, S. Tyaginov, 2006 .

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

A. F. Shulekin, S. Tyaginov, M. Vexler, 2005 .

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

K. Gacem, V. Zaporojtchenko, S. Tyaginov, 2010 .

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

T. Grasser, B. Meinerzhagen, S. Tyaginov, 2009 .

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

I. Grekhov, V. Zaporojtchenko, S. Tyaginov, 2007 .

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness

A. El Hdiy, R. Khlil, A. F. Shulekin, 2004, Microelectron. Reliab..

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

A. F. Shulekin, M. I. Vexler, Stanislav Tyaginov, 2005 .

Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(11 1)

I. Grekhov, S. Tyaginov, M. Vexler, 2007 .

Luminescence intensity monitoring in a MOS tunnel structure with inhomogeneous thickness of the insulator

A. F. Shulekin, I. Grekhov, S. Tyaginov, 2005 .

On the temperature behavior of hot-carrier degradation

T. Grasser, B. Kaczer, J. Franco, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectronics and reliability.

Hot-carrier degradation modeling using full-band Monte-Carlo simulations

E. Seebacher, T. Grasser, H. Ceric, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2016, IEEE Electron Device Letters.

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

A. Chasin, B. Kaczer, G. Eneman, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, IEEE Transactions on Electron Devices.

The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices

Tibor Grasser, Prateek Sharma, Hajdin Ceric, 2016 .

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Dimitri Linten, Geert Hellings, Tibor Grasser, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Hot-carrier degradation caused interface state profile—Simulation versus experiment

Tibor Grasser, Christoph Jungemann, Hajdin Ceric, 2011 .

Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

Young-soo Park, I. Grekhov, S. Tyaginov, 2005 .

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Dimitri Linten, Geert Hellings, Philippe Roussel, 2019, IEEE Electron Device Letters.

Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Dimitri Linten, Guido Groeseneken, Ben Kaczer, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs

Dimitri Linten, Guido Groeseneken, Ben Kaczer, 2018, 2018 International Integrated Reliability Workshop (IIRW).

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs

Prateek Sharma, Tibor Grasser, Jacopo Franco, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Prateek Sharma, Karl Rupp, Tibor Grasser, 2015, Microelectron. Reliab..

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

T. Grasser, B. Kaczer, J. Franco, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs

Tibor Grasser, Jacopo Franco, Ben Kaczer, 2014, 2014 IEEE International Reliability Physics Symposium.

Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

I. Starkov, T. Grasser, H. Enichlmair, 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Impact of the carrier distribution function on hot-carrier degradation modeling

Tibor Grasser, Christoph Jungemann, Ivan Starkov, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tibor Grasser, Christoph Jungemann, Oliver Triebl, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

T. Schram, G. Kar, B. Kaczer, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures

T. Grasser, M. Karner, S. Tyaginov, 2015 .

Reliability challenges in Forksheet Devices: (Invited Paper)

H. Mertens, R. Ritzenthaler, A. Chasin, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs

T. Grasser, M. Waltl, G. Rzepa, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

T. Grasser, M. Waltl, G. Rzepa, 2020, 2020 IEEE International Integrated Reliability Workshop (IIRW).

T. Grasser, B. Kaczer, J. Franco, 2018 .

Analysis of the Features of Hot-Carrier Degradation in FinFETs

A. Chasin, D. Linten, T. Grasser, 2018, Semiconductors.

Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs

A. De Keersgieter, A. Chasin, D. Linten, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si–H Bond Dissociation/Passivation Energy Distributions

B. Kaczer, G. Groeseneken, J. Franco, 2021, IEEE Transactions on Electron Devices.

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

Ben Kaczer, Erik Bury, Michiel Vandemaele, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation

T. Grasser, M. Waltl, B. Kaczer, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology

B. Kaczer, T. Grasser, G. Hellings, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

Tibor Grasser, Michael Nelhiebel, Gregor Pobegen, 2013, IEEE Electron Device Letters.

Full (V g , V d ) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

H. Mertens, A. Chasin, D. Linten, 2019 .

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

D. Verreck, S. Tyaginov, T. Knobloch, 2024, npj 2D Materials and Applications.

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

R. Ritzenthaler, A. Chasin, B. O’Sullivan, 2023, Micromachines.

On The Contribution of Secondary Holes in Hot-Carrier Degradation – a Compact Physics Modeling Perspective

A. De Keersgieter, A. Chasin, A. Spessot, 2023, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors

B. Kaczer, A. Afzalian, G. Hellings, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

A Compact Physics Analytical Model for Hot-Carrier Degradation

Dimitri Linten, Geert Hellings, Ben Kaczer, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Physical modeling of hot-carrier degradation in nLDMOS transistors

T. Grasser, H. Ceric, Y. Wimmer, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors

Hans Reisinger, Wolfgang Gustin, Gunnar Andreas Rott, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

I. Starkov, T. Grasser, H. Enichlmair, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

An analytical approach for physical modeling of hot-carrier induced degradation

Tibor Grasser, Hajdin Ceric, C. Jungemann, 2011, Microelectron. Reliab..

Analysis of worst-case hot-carrier conditions for n-type MOSFET

I. Starkov, T. Grasser, S. Tyaginov, 2011, 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics.

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

A. Chasin, B. Govoreanu, B. Parvais, 2022, IEEE International Reliability Physics Symposium.