A. Molfese

Reliability and performance optimization of 42V N-channel drift MOS transistor in advanced BCD technology

P. Gattari, G. Croce, F. Alagi, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

TCAD investigation on hot-electron injection in new-generation technologies

Enrico Sangiorgi, Claudio Fiegna, Antonio Gnudi, 2018, Microelectron. Reliab..

Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films

Ann Witvrouw, A. Witvrouw, A. Molfese, 2005 .