D. Goguenheim

发表

Hot-Carrier Reliability in n-MOSFET's Used as Pass-Transistors

D. Vuillaume, N. Revil, A. Bravaix, 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides

G. Reimbold, A. Bravaix, D. Goguenheim, 2001 .

Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node

V. Huard, E. Vincent, A. Bravaix, 2010, 2010 IEEE International Reliability Physics Symposium.

Study of gate contact over active area

D. Goguenheim, L. Lopez, M. Carmona, 2014, 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).

Ultrathin oxide reliability after combined constant voltage stress and substrate hot electron injection

A. Bravaix, D. Goguenheim, C. Trapes, 2005 .

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1997 .

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D. Vuillaume, A. Bravaix, M. Jourdain, 1999 .

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability (NBTI)

D. Goguenheim, J. Ogier, C. Bénard, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

D. Goguenheim, J. Ogier, C. Bénard, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

Total Recovery ofDefects Generated byNegative BiasTemperature Instability (NBTI)

D. Goguenheim, C. Bénard, 2008 .

MOSFET layout modifications for hump effect removal

D. Goguenheim, L. Lopez, O. Gagliano, 2013 .

Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection

A. Bravaix, D. Goguenheim, C. Trapes, 2003 .

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

N. Revil, A. Bravaix, D. Goguenheim, 1999 .

Defects and relaxation during the negative bias temperature instability in PMOSFET

D. Goguenheim, J. Ogier, C. Bénard, 2008, 2008 26th International Conference on Microelectronics.

Deep hole trapping effects in the degradation mechanisms of 6.5-2 nm thick gate-Oxide PMOSFETs

N. Revil, A. Bravaix, D. Goguenheim, 2004 .

Fullerenes C 60 self-assembled on functionalized surfaces

D. Goguenheim, L. Patrone, G. Delafosse, 2009 .

Theoretical and experimental aspects of the thermal dependence of electron capture coefficients

M. Lannoo, D. Goguenheim, 1990 .

Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs

V. Huard, A. Bravaix, E. Vincent, 2011, 2011 International Electron Devices Meeting.

Different types of phase separation in binary monolayers of long chain alkyltrichlorosilanes on silicon oxide

D. Vuillaume, D. Goguenheim, L. Patrone, 2012 .

Impact of chain length, temperature, and humidity on the growth of long alkyltrichlorosilane self-assembled monolayers.

D. Vuillaume, D. Goguenheim, L. Patrone, 2011, Physical chemistry chemical physics : PCCP.

Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

D. Vuillaume, D. Deresmes, D. Goguenheim, 1993 .

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

L. Goux, D. Wouters, J. Lisoni, 2008 .

Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation

L. Goux, D. Wouters, J. Lisoni, 2006, 2006 7th Annual Non-Volatile Memory Technology Symposium.

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown

Jean-Luc Ogier, Didier Goguenheim, D. Pic, 2008, Microelectron. Reliab..

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides

Didier Goguenheim, Nathalie Revil, Alain Bravaix, 2004, Microelectron. Reliab..

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1999 .

Improved hot-carrier immunity of p-MOSFETs with 8nm thick nitrided gate-oxide during bi-directional stressing

M. Haond, D. Vuillaume, A. Bravaix, 1995 .

Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap‐filling experiment: The charge‐potential feedback effect

G. Vincent, D. Vuillaume, N. Johnson, 1990 .

Hot-carrier injections in SiO2

Dominique Vuillaume, Didier Goguenheim, Alain Bravaix, 1998 .

Towards a full microscopic approach to the modeling of transistors with nanometer dimensions

J. Autran, M. Lannoo, M. Bescond, 2003 .

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities

Jean-Luc Ogier, Didier Goguenheim, Pascal Fornara, 2009, Microelectron. Reliab..

New insights on the electronic properties of the trivalent silicon defects at oxidized 〈100〉 silicon surfaces

Didier Goguenheim, Dominique Vuillaume, G. Vincent, 1990 .