C. Liang

An analytical model for self-limiting behavior of hot-carrier degradation in 0.25 mu m n-MOSFET's

H. Gaw, C. Liang, P. Cheng, 1992, IEEE Electron Device Letters.

A diffusion model of subthreshold current for GaAs MESFETs

N. Cheung, C. Liang, M. Sokolich, 1991 .

On the temperature variation of threshold voltage of GaAs MESFETs

N. Cheung, C. Liang, H. Wong, 1992 .

Refractory metal nitride rectifying contacts on GaAs

N. Cheung, S. Cheung, C. Liang, 1987 .

Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

N. Cheung, S. Cheung, C. Liang, 1987 .

Operation of GaAs MESFETs at cryogenic temperatures

N. Cheung, C. Liang, H. Wong, 1989, Proceedings of the Workshop on Low Temperature Semiconductor Electronics,.

Buried dopant and defect layers for device structures with high-energy ion implantation

N. Cheung, B. Liew, C. Liang, 1989 .

Parasitic effects of surface states on GaAs MESFET characteristics at liquid-nitrogen temperature

N. Cheung, C. Liang, R. Sato, 1989 .

The effects of annealing encapsulant and ambient on the barrier height of WNx /GaAs contact and self-aligned gate field effect transistor fabrication

E. Haller, N. Cheung, S. Cheung, 1988 .