S. Chang

A new off-state drain-bias TDDB lifetime model for DENMOS device

Kenneth Wu, S. Chang, C. Chen, 2009, 2009 IEEE International Reliability Physics Symposium.

A new TDDB lifetime bi-model for eDRAM MIM capacitor with ZrO2 high-k dielectrics

K. Wu, S. Chang, C. Chen, 2008, 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

C. Wang, C. Su, P. Sung, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

T. Hong, P. Sung, K. Kao, 2022, 2022 International Electron Devices Meeting (IEDM).