M. Reshchikov

发表

Yellow and green luminescence in a freestanding GaN template

H. Morkoç, Kyu-Pil Lee, M. Reshchikov, 2001 .

A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES

H. Morkoç, S. Doğan, V. Avrutin, 2005 .

Luminescence properties of defects in GaN

H. Morkoç, M. Reshchikov, 2005 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .

A Comparative Study of MBE‐Grown GaN Films Having Predominantly Ga‐ or N‐Polarity

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2001 .

Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy

H. Morkoç, M. Reshchikov, P. Visconti, 2001 .

Highly selective photoenhanced wet etching of GaN for defect investigation and device fabrication

H. Morkoç, K. M. Jones, R. Cingolani, 2000 .

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

S. Novak, B. Mazumder, M. Reshchikov, 2020, Scientific Reports.

Abrupt and tunable quenching of photoluminescence in ZnO

M. Reshchikov, N. Albarakati, J. D. McNamara, 2016 .

H. Morkoç, S. Novak, V. Avrutin, 2009 .

On quantum efficiency of photoluminescence in ZnO layers and nanostructures

A. Waag, A. Bakin, M. Reshchikov, 2009 .

Defects in bulk ZnO studied by steady-state and time-resolved photoluminescence

M. Reshchikov, 2007 .

Visible Luminescence Related to Defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Luminescence properties of defects in ZnO

H. Morkoç, J. Xie, A. Osinsky, 2007 .

Green luminescence in Mg-doped GaN

D. Demchenko, M. Reshchikov, R. Calarco, 2014 .

M. Boćkowski, M. Reshchikov, M. Zajac, 2021 .

Measurement and analysis of photoluminescence in GaN

M. Reshchikov, 2021 .

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Y. Makarov, V. Avrutin, N. Izyumskaya, 2020, Scientific Reports.

Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors

M. Reshchikov, 2020, physica status solidi (a).

Fine structure of another blue luminescence band in undoped GaN

M. Reshchikov, 2019 .

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

D. Demchenko, M. Reshchikov, P. Ghimire, 2018 .

Thermal quenching of the yellow luminescence in GaN

H. Morkoç, V. Avrutin, M. Reshchikov, 2018 .

Two yellow luminescence bands in undoped GaN

Y. Makarov, M. Reshchikov, A. Usikov, 2018, Scientific Reports.

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

H. Morkoç, Y. Makarov, V. Avrutin, 2016, Scientific Reports.

Point Defects in GaN

M. Reshchikov, 2015 .

Carrier-capture characteristics of point defects in GaN and ZnO

M. Reshchikov, 2014 .

Temperature dependence of photoconductivity in Zn-doped GaN

M. Reshchikov, 2014 .

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

A. Kvasov, M. Reshchikov, A. Usikov, 2011 .

Effect of UV exposure on the surface charge behavior for GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2010, OPTO.

Determination of GaN polarity on periodically oriented surfaces

C. Eddy, M. Reshchikov, J. Hite, 2015 .

Role of the surface in the electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009 .

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

M. Reshchikov, J. Marini, F. Shahedipour-Sandvik, 2016 .

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

H. Morkoç, S. Doğan, M. Reshchikov, 2004 .

Anomalous shifts of blue and yellow luminescence bands in MBE-grown ZnO films

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

B. Wessels, R. Korotkov, M. Reshchikov, 1999 .

Comparison of surface photovoltage behavior for n-type versus p-type GaN

M. Reshchikov, A. Baski, M. Foussekis, 2011 .

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

J. Xie, A. Osinsky, B. Hertog, 2007 .

Acceptors in ZnO Studied by Photoluminescence

J. Nause, B. Nemeth, M. Reshchikov, 2006 .

Giant shifts of photoluminescence bands in GaN

M. Reshchikov, 2020 .

Fine structure of the red luminescence band in undoped GaN

Y. Makarov, M. Reshchikov, A. Usikov, 2014 .

Time-resolved photoluminescence from defects in n-type GaN

M. Reshchikov, 2014 .

Long-lasting photoluminescence in freestanding GaN templates

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2003 .

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

B. Wessels, R. Korotkov, M. Reshchikov, 2000 .

Photoluminescence and Excitation Spectra of Deep Defects in GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

Deep acceptors in undoped GaN

B. Wessels, R. Korotkov, M. Reshchikov, 1999 .

Unstable luminescence in GaN and ZnO

H. Morkoç, Y. Moon, J. Nause, 2006 .

Blue Luminescence in Undoped and Zn-doped GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2002 .

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2002 .

Optical properties of GaN with Ga and N polarity

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2001 .

Excitons bound to surface defects in GaN

H. Morkoç, M. Reshchikov, Daming Huang, 2002 .

Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction

H. Morkoç, R. Cingolani, J. Jasinski, 2001 .

Determination of acceptor concentration in GaN from photoluminescence

M. Reshchikov, 2006 .

Effects of polarity and surface treatment on Ga- and N-polar bulk GaN

M. Reshchikov, A. Baski, J. D. McNamara, 2012 .

Blue and Yellow Luminescence in ZnO Films Grown by Peroxide MBE

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Effect of Growth Conditions on Defect-related Photoluminescence in ZnO Thin Films Grown by Plasma Assisted MBE

H. Morkoç, V. Avrutin, N. Izyumskaya, 2007 .

Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

R. Korotkov, M. Reshchikov, 2001 .

Transient photovoltage in GaN as measured by atomic force microscope tip

H. Morkoç, M. Reshchikov, S. Sabuktagin, 2004 .

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Cagliyan Kurdak, S. S. Park, Hadis Morkoç, 2001 .

Unusual properties of the dominant acceptor in freestanding GaN

H. Morkoç, M. Reshchikov, K. Y. Lee, 2003 .

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2002 .

Photoluminescence study of deep-level defects in undoped GaN

H. Morkoç, M. Reshchikov, Soonoh Park, 2001 .

Photoluminescence of GaN grown by molecular- beam epitaxy on a freestanding GaN template

D. C. Reynolds, S. S. Park, H. Morkoç, 2001 .

Temperature-dependent Kelvin probe measurements of band bending in p-type GaN

M. Reshchikov, A. Baski, J. D. McNamara, 2012 .

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2001 .

Characterization of free-standing hydride vapor phase epitaxy GaN

S. S. Park, H. Morkoç, K. M. Jones, 2001 .

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

Y. Makarov, M. Reshchikov, A. Usikov, 2016, Journal of Electronic Materials.

Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

H. Morkoç, A. Yankovich, A. Kvit, 2011 .

Effect of Thermal Annealing on Deep and Near-band Edge Emission from ZnO Films Grown by Plasma-assisted MBE

H. Morkoç, S. Novak, V. Avrutin, 2008 .

Photoluminescence from ZnO nanowires

A. Waag, A. Bakin, M. Reshchikov, 2009 .

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

C. K. Inoki, H. Morkoç, T. Kuan, 2002 .

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

M. Reshchikov, 2014 .

Blue luminescence and Zn acceptor in GaN

D. Demchenko, M. Reshchikov, 2013 .

Dramatic thermal quenching of photoluminescence in Zn‐doped GaN

M. Reshchikov, 2013 .

Surface photovoltage in undoped n-type GaN

A. A. Baski, M. Foussekis, Michael A. Reshchikov, 2010 .

Unusual luminescence lines in GaN

S. S. Park, H. Morkoç, J. Jasinski, 2003 .

Unusual Properties of the Red and Green Luminescence Bands in Ga-rich GaN

H. Morkoç, M. Reshchikov, 2004 .

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Hadis Morkoç, Jeff Nause, Xing Gu, 2004 .

Epitaxy of highly optical efficient GaN on O and Zn face ZnO

H. Morkoç, J. Nause, B. Nemeth, 2003 .

Energy band bowing parameter in AlxGa1-xN alloys

H. Morkoç, S. Novak, M. Reshchikov, 2002 .

GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

Hadis Morkoç, Daming Huang, Michael A. Reshchikov, 2002 .

Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN

M. Reshchikov, R. Calarco, S. Fernández-Garrido, 2013 .

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

A. Waag, A. Bakin, M. Reshchikov, 2012 .

Low-temperature surface photovoltage in p-type GaN

M. Reshchikov, A. Baski, J. D. McNamara, 2014 .

Photoluminescence related to Ca in GaN

D. Demchenko, M. Boćkowski, M. Reshchikov, 2022, Physical Review B.

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Y. Makarov, V. Avrutin, N. Izyumskaya, 2020, Scientific Reports.

Unusual properties of the RY3 center in GaN

D. Demchenko, Ü. Özgür, F. Tuomisto, 2019, Physical Review B.

Two charge states of the CN acceptor in GaN: Evidence from photoluminescence

H. Morkoç, D. Demchenko, A. Strittmatter, 2018, Physical Review B.

Evaluation of the concentration of point defects in GaN

Y. Makarov, J. Leach, F. Tuomisto, 2017, Scientific Reports.

Hydrogen-carbon complexes and the blue luminescence band in GaN.

Michael A. Reshchikov, D. Demchenko, M. Reshchikov, 2016 .

HVPE GaN with Low Concentration of Point Defects for Power Electronics

M. Reshchikov, A. Usikov, H. Helava, 2015 .

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Alexander Usikov, Michael A. Reshchikov, H. Helava, 2014 .

Temperature dependent behavior of the SPV for n-type GaN

Hadis Morkoç, M. A. Reshchikov, Huiyong Liu, 2012, OPTO.

Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

A. Waag, A. Bakin, M. Reshchikov, 2011 .

Acceptors in undoped GaN studied by transient photoluminescence

B. Wessels, R. Korotkov, M. Reshchikov, 2003 .

Symmetry of VGaTeAs Complex in GaAs and its Reorientation at Low Temperature

M. Reshchikov, N. Averkiev, A. Gutkin, 1993 .

Growth and Investigation of GaN/AlN Quantum Dots

H. Morkoç, M. Nathan, K. M. Jones, 2000 .

Resonance and relaxation ultrasonic attenuation in p-GaAs: Mn at low temperature

M. Reshchikov, O. G. Krasikova, N. Averkiev, 1988 .

Yellow luminescence in ZnO layers grown on sapphire

J. Xie, A. Osinsky, B. Hertog, 2008 .

Effect of thermal annealing on Cu-related green luminescence in ZnO

Hadis Morkoç, Ryoko Shimada, V. Avrutin, 2009, OPTO.

Stability of the CNHi Complex and the Blue Luminescence Band in GaN

D. Demchenko, M. Reshchikov, B. McEwen, 2021, physica status solidi (b).

Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K

M. Reshchikov, A. Baski, J. D. McNamara, 2014 .

Piezospectroscopic behaviour and structure of the 0.95 eV photoluminescence centres in GaAs doped with Te or Sn

M. Reshchikov, A. Gutkin, V. R. Sosnovskii, 1994 .

Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77–230 K

M. Reshchikov, A. Gutkin, V. Sedov, 1997 .

High-Temperature Reorientation Of Distortions In The Excited State Of The V Ga Te As Complexes In n-Type GaAs

M. Reshchikov, A. Gutkin, V. Sedov, 1996 .

Two yellow luminescence bands in undoped GaN

Y. Makarov, M. Reshchikov, A. Usikov, 2018, Scientific Reports.

Zero-phonon line and fine structure of the yellow luminescence band in GaN

H. Morkoç, M. Reshchikov, A. Usikov, 2016 .

Yellow luminescence of gallium nitride generated by carbon defect complexes.

D. Demchenko, M. Reshchikov, D O Demchenko, 2013, Physical review letters.

Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN

F. Shahedipour-Sandvik, V. Sklyar, K. Hogan, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Optically generated giant traps in high-purity GaN

M. Reshchikov, A. Usikov, H. Helava, 2016 .

Green luminescence in Mg-doped GaN

D. Demchenko, M. Reshchikov, R. Calarco, 2014 .

Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN

M. Reshchikov, M. F. Bishop, T. McMullen, 2013 .

Photoluminescence from defects in GaN

M. Reshchikov, 2023, OPTO.

Fine Structure of the Carbon-Related Blue Luminescence Band in GaN

M. Reshchikov, 2022, Solids.

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

D. Demchenko, M. Reshchikov, I. Diallo, 2018 .

Effect of potential fluctuations on photoluminescence in Mg‐doped GaN

H. Morkoç, Y. Moon, M. Reshchikov, 2005 .

Thermal annealing of GaN implanted with Be

D. Demchenko, M. Boćkowski, M. Reshchikov, 2022, Journal of Applied Physics.

High quantum efficiency of photoluminescence in GaN and ZnO

H. Morkoç, J. Nause, B. Nemeth, 2005 .

Photoadsorption and photodesorption for GaN

A. A. Baski, M. Foussekis, Michael A. Reshchikov, 2009 .

Manifestation of edge dislocations in photoluminescence of GaN

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2005 .

Photoluminescence from structural defects in GaN

Jacek B. Jasinski, Hadis Morkoç, M. A. Reshchikov, 2003 .

Manifestation of structural defects in photoluminescence from GaN

H. Morkoç, J. Jasinski, Z. Liliental-Weber, 2003 .

Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

H. Morkoç, M. Reshchikov, F. Yun, 2002 .

Photoluminescence from freestanding GaN with (1010) orientation

H. Morkoç, D. Hill, M. Reshchikov, 2003 .

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

H. Morkoç, K. M. Jones, R. Cingolani, 2000 .

Excitons bound to structural defects in GaN

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication

H. Morkoç, David J. Smith, K. M. Jones, 2001 .

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Hadis Morkoç, Paolo Visconti, Feng Yun, 2001 .

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

H. Morkoç, R. Alfano, S. Doğan, 2003 .

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

S. S. Park, H. Morkoç, D. Huang, 2003 .

Structural, optical and electrical properties of GaN films grown by metalorganic chemical vapor deposition on sapphire.

H. Morkoç, K. M. Jones, A. Passaseo, 2001 .

Defect investigation of GaN thin films etched by photo-electrochemical and hot wet etching by atomic force and transmission electron microscopy

H. Morkoç, David J. Smith, K. M. Jones, 2001 .

Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

H. Morkoç, K. M. Jones, M. Reshchikov, 2000 .

MOCVD Growth and Characterization of Be-Doped GaN.

D. Demchenko, M. Reshchikov, F. Shahedipour-Sandvik, 2022, ACS applied electronic materials.

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

S. Novak, B. Mazumder, M. Reshchikov, 2020, Scientific Reports.

Defect luminescence in heavily Mg doped GaN

G. Yi, B. Wessels, M. Reshchikov, 1999 .

Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities

Bruce W Wessels, Gyu-Chul Yi, Michael A. Reshchikov, 1999 .

Recombination at surface states in GaN

H. Morkoç, K. M. Jones, R. Molnar, 2001 .

Luminescence from defects in GaN

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2006 .

Properties of AlxGa1−xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

H. Morkoç, M. Reshchikov, F. Yun, 2002 .

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Hadis Morkoç, Feng Yun, A. A. Baski, 2002 .

Characteristics of free-standing hydride-vapor- phase-epitaxy-grown GaN with very low defect concentration

Hadis Morkoç, Roberto Cingolani, Paolo Visconti, 2000 .

Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

Band bending near the surface in GaN as detected by a charge sensitive probe

Hadis Morkoç, M. A. Reshchikov, H. Morkoç, 2003 .

H. Morkoç, M. Reshchikov, Daming Huang, 2002 .

Transient photoluminescence of defect transitions in freestanding GaN

S. S. Park, H. Morkoç, Kyu-Pil Lee, 2001 .

GaN based quantum dot heterostructures

H. Morkoç, M. Nathan, J. Cui, 2000 .

Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates

H. Morkoç, S. Saddow, J. Wolan, 2000 .

Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

H. Morkoç, David J. Smith, R. Cingolani, 2002 .

Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi‐layered structures

M. Wraback, S. Mahajan, M. Reshchikov, 2007 .

On the Origin of the Yellow Luminescence Band in GaN

M. Reshchikov, 2022, physica status solidi (b).

Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

D. Demchenko, M. Reshchikov, 2021 .

Rapid Delineation of Extended Defects in GaN and a Novel Method for Their Reduction

H. Morkoç, R. Cingolani, J. Jasinski, 2002 .

Evaluation of GaN by photoluminescence measurement

Michael A. Reshchikov, M. Reshchikov, 2011 .

M. Reshchikov, A. Usikov, H. Helava, 2015, Journal of Electronic Materials.

Photoluminescence of Zn-doped GaN grown by HVPE

H. Morkoç, R. Molnar, M. Reshchikov, 2001 .

The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN

M. Reshchikov, Michał Boćkowski, 2024, Solids.

Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE

A. Uedono, M. Boćkowski, M. Reshchikov, 2023, Materials Science in Semiconductor Processing.

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force microscopy

Hadis Morkoç, M. A. Reshchikov, S. Chevtchenko, 2005 .