D. Ballutaud

发表

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

A. Kaminski, E. Fourmond, M. Lemiti, 2009 .

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

S. V. Djurenko, J. Colinge, V. Lysenko, 1997 .

Optical investigations of the microstructure of carbon nitride films deposited by magnetron sputtering

M. Lejeune, D. Ballutaud, M. Benlahsen, 2002 .

Optical and compositional study of silicon oxide thin films deposited in a dual-mode (microwave/radiofrequency) plasma-enhanced chemical vapor deposition reactor

J. Perrin, D. Ballutaud, R. Etemadi, 1998 .

Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation

Alain Lusson, L. Svob, A. Lusson, 1998 .

Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds

D. Ballutaud, D. Côte, B. Clerjaud, 1993 .

Hydrogen Incorporation in MPCVD Nanocrystalline Diamond Films During the Deposition Process

A. Lusson, D. Ballutaud, F. Jomard, 2009 .

Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

H. Girard, J. Vigneron, D. Ballutaud, 2008 .

Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

D. Ballutaud, C. Godet, K. Zellama, 2008 .

Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

D. Ballutaud, C. Godet, M. Clin, 2008 .

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

V. Lysenko, Y. Gomeniuk, S. Ashok, 2012 .

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

H. Girard, D. Ballutaud, F. Jomard, 2008 .

Growth of multiwalled carbon nanotubes during the initial stages of aerosol-assisted CCVD

C. Reynaud, P. Launois, D. Ballutaud, 2005 .

Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface

H. Girard, D. Ballutaud, B. Bouchet-Fabre, 2006 .

Controlled Anodic Treatments on Boron-Doped Diamond Electrodes Monitored by Contact Angle Measurements

H. Girard, A. Etcheberry, D. Ballutaud, 2007 .

Semiconducting and magnetic properties of Zn1−xMnxO films grown by metalorganic chemical vapor deposition

P. Galtier, D. Ballutaud, F. Jomard, 2005 .

Electron spin resonance study of hydrogenation effects in polycrystalline silicon

F. Babonneau, D. Ballutaud, M. Aucouturier, 1986 .

Hydrogen thermal stability in buried oxides of SOI structures

D. Ballutaud, A. Boutry-Forveille, A. Nazarov, 1999 .

ZnO growth by chemical vapour transport

R. Triboulet, S. Hassani, A. Lusson, 1999 .

n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

A. Lusson, D. Ballutaud, J. Barjon, 2006 .

Some Recent Advances on the n-Type Doping of Diamond

J. Butler, R. Kalish, A. Deneuville, 2005 .

Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes

H. Girard, A. Etcheberry, M. Herlem, 2007 .

Stoichiometry and infrared absorption of amorphous a-C1−xNx:H carbon nitride films

S. Charvet, D. Ballutaud, C. Godet, 2004 .

Nitrogenation of boron doped diamond: Comparison of an electrochemical treatment in liquid ammonia and a NH3/N2 plasma

A. Etcheberry, D. Ballutaud, A. Gonçalves, 2009 .

Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

H. Girard, A. Etcheberry, Mael Manesse, 2008 .

Formation of deuterium-related shallow donors in boron-doped diamond.

J. Butler, R. Kalish, A. Deneuville, 2004 .

Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films

A. Deneuville, D. Ballutaud, J. Chevallier, 2000 .

HYDROGEN IN MONOCRYSTALLINE CVD BORON DOPED DIAMOND

A. Deneuville, D. Ballutaud, J. Chevallier, 1999 .

Sensitivity of Raman spectra excited at 325 nm to surface treatments of undoped polycrystalline diamond films

D. Tromson, P. Bergonzo, A. Deneuville, 2006 .

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

K. Bouzehouane, S. Fusil, A. Barthélémy, 2007, 0712.0223.

Minority carrier blockade in MIND model solar cells

M. Ley, Z. Kuźnicki, D. Ballutaud, 2003 .

Hydrogen configurations and stability in amorphous sputtered silicon

A. Lusson, D. Ballutaud, J. Dixmier, 1997 .

Chemical characterization of the superficial layers of deuterium-implanted cadmium telluride

D. Ballutaud, L. Švob, H. Hage-Ali, 1988 .

Xps Study of CdTe Surface Layers: Effects of Hydrogen

D. Ballutaud, Y. Marfaing, A. Heurtel, 1988 .

High affinity self-assembled monolayers for copper CVD

N. G. Semaltianos, P. Doppelt, D. Ballutaud, 2004 .

Influence of thermal treatments on the distribution of contaminating copper near the surface of silicon: a comparative SIMS and XPS study☆

D. Ballutaud, P. Mierry, M. Aucouturier, 1991 .

Silicon incorporation in CVD diamond layers

D. Ballutaud, J. Barjon, J. Chevallier, 2005 .

Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputtering

D. Ballutaud, C. Godet, M. Clin, 2005 .

Comparative study of the structure of a-CNx and a-CNx:H films using NEXAFS, XPS and FT-IR analysis

D. Ballutaud, C. Godet, K. Zellama, 2005 .

Conversion of p-type to n-type diamond by exposure to a deuterium plasma

J. Butler, R. Kalish, A. Deneuville, 2004 .

Chemical characterization of superficial layers of monocrystalline silicon after annealing in a RF hydrogen plasma

D. Ballutaud, M. Aucouturier, G. Moulin, 1986 .

Hydrogen diffusion in polycrystalline boron doped and undoped diamond.

H. Girard, A. Etcheberry, M. Herlem, 2004 .

Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

H. Girard, A. Etcheberry, D. Ballutaud, 2007 .

Simultaneous bulk hydrogen passivation and selective emitter formation assisted by ECR-plasma applied to industrial mc-Si solar cells

R. Monna, J. Boudaden, J. Muller, 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon

R. Rizk, D. Ballutaud, P. Mierry, 1991 .

Near-surface electrical effects of oxidation and hydrogenation in silicon

J. Maurice, D. Ballutaud, M. Aucouturier, 1989 .

Deep hydrogen traps in heavily B-doped diamond

R. Jones, P. Briddon, A. Deneuville, 2003 .

The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

R. Kalish, A. Deneuville, D. Ballutaud, 2007 .

Electrochemical Properties and Surface Modifications of GaInAs Ternary Alloys in Aqueous Solutions

A. Etcheberry, D. Ballutaud, D. Moutonnet, 1991 .

ESR of P2O5-Doped V2O5 Single Crystals

C. Sanchez, J. Livage, D. Ballutaud, 1980, July 16.

Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

A. Slaoui, D. Ballutaud, F. Jomard, 2009 .

Influence of hydrogen plasma treatment on electrochemical behavior of moderately and highly boron doped diamond electrodes

A. Etcheberry, M. Herlem, D. Ballutaud, 2004 .

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

D. Ballutaud, A. Boutry-Forveille, A. Nazarov, 1998 .

XPS studies of oxide layers on InP after oxidation in the presence of Ce4

C. Debiemme-Chouvy, A. Etcheberry, D. Ballutaud, 1992 .

An E.S.R. study of paramagnetic centers in α-VOPO4 and α-VOPO4,2H2O

P. Courtine, D. Ballutaud, E. Bordes, 1982 .

Influence of boron concentration on the XPS spectra of the (100) surface of homoepitaxial boron‐doped diamond films

A. Deneuville, D. Ballutaud, S. Ghodbane, 2006 .

In flight treatment of metallurgical silicon powder by rf thermal plasma: elaboration of hydrogenated silicon deposit on a substrate

D. Morvan, J. Amouroux, D. Ballutaud, 2002 .

PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT

D. Morvan, J. Amouroux, D. Ballutaud, 2003 .

Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films

F. Omnès, D. Ballutaud, S. Ghodbane, 2010 .

The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition

R. Wehrspohn, D. Ballutaud, R. Etemadi, 1998 .

A new vanadium pentoxide amorphous phase

J. Livage, D. Ballutaud, J. Audière, 1981 .

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

E. Fourmond, M. Lemiti, J. Lelievre, 2008 .

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

N. Bérerd, E. Fourmond, M. Lemiti, 2010 .

Correlation between flat-band potential position and oxygenated termination nature on boron-doped diamond electrodes

H. Girard, A. Etcheberry, D. Ballutaud, 2008 .

Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

H. Girard, A. Etcheberry, A. Deneuville, 2005 .

Effect of target self-bias on carbon nitride thin films deposited by RF magnetron sputtering

M. Lejeune, D. Ballutaud, M. Clin, 2001 .

Electron cyclotron resonance deposition, structure, and properties of oxygen incorporated hydrogenated diamondlike amorphous carbon films

K. Paraskevopoulos, D. Ballutaud, C. Godet, 2004 .

Effect of Surface Preparations on Electrical and Chemical Surface Properties of P‐Type Silicon

A. Etcheberry, D. Ballutaud, P. Mierry, 1990 .

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

J. Butler, R. Kalish, A. Deneuville, 2003, Nature materials.

Hydrogen diffusion and stability in polycrystalline CVD undoped diamond

D. Tromson, P. Bergonzo, D. Ballutaud, 2001 .

Porous n-silicon produced by photoelectrochemical etching

Claude Lévy-Clément, J.-N. Chazalviel, François Ozanam, 1993 .

Carbon and hydrogen incorporation in ZnTe layers grown by metalorganic chemical vapor deposition

H. Dumont, D. Ballutaud, O. Gorochov, 1994 .

EXAFs and XPS studies of Hg1−xZnxTe: Determination of local atomic structure and valence band maximum

R. Triboulet, D. Ballutaud, Y. Marfaing, 1989 .

Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

D. Morvan, J. Amouroux, D. Ballutaud, 2007 .

Phosphorous emitter etch back and bulk hydrogenation by means of an ECR-hydrogen plasma applied to form a selective emitter structure on mc-Si

R. Monna, J. Boudaden, J. Muller, 2002 .

Hydrogen Diffusion and Trapping in Micro-Nanocrystalline Silicon

D. Ballutaud, A. Correia, P. Elkaim, 1995 .

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

D. Ballutaud, H. Amzil, D. Sayah, 1999 .

Charge imbalance at oxide interfaces: How nature deals with it

M. Casanove, K. Bouzehouane, S. Fusil, 2007 .

EFFECTS OF COPPER AND OXYGEN PRECIPITATION DURING THERMAL OXIDATION OF SILICON: AN ELECTRON-BEAM-INDUCED CURRENT STUDY

J. Maurice, D. Ballutaud, A. Boutry-Forveille, 1995 .

Microstructure, Electrical Properties and Passivation of Defects at the Silicon‐Silicon‐Dioxide Interface

J. Maurice, D. Ballutaud, A. Correia, 1995 .

XPS study of the ZnxHg1−xTe alloys: Core levels and valence-band offset

R. Triboulet, D. Ballutaud, Y. Marfaing, 1990 .

Angle-resolved photoemission study of Zn0.15Hg0.85Te: valence band determination

R. Triboulet, D. Ballutaud, Y. Marfaing, 1992 .

Copper and Oxygen Precipitation During Thermal Oxidation of Silicon: A Tem and Ebic Study

D. Ballutaud, A. Boutry-Forveille, A. Correia, 1996 .

Trap limited diffusion of hydrogen in boron-doped diamond

A. Deneuville, D. Ballutaud, J. Chevallier, 2003 .

Hydrogen-acceptor interactions in diamond

A. Lusson, D. Ballutaud, J. Chevallier, 2001 .

Hydrogen as a Diagnostic Tool in Analysing SOI Structures

D. Ballutaud, A. Boutry-Forveille, A. Nazarov, 2000 .

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

C. Dutto, D. Ballutaud, E. Fogarassy, 2003 .

Growth of the Zn1−xMnxO alloy by the MOCVD technique

P. Galtier, D. Ballutaud, V. Sallet, 2006 .

EBIC technique applied to polycrystalline silicon thin films: minority carrier diffusion length improvement by hydrogenation

A. Slaoui, M. Rusu, A. Rivière, 2002 .

Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface

J. Maurice, D. Ballutaud, A. Correia, 1993 .

Sensitivity of photoelectron energy loss spectroscopy to surface reconstruction of microcrystalline diamond films

D. Ballutaud, C. Godet, M-A. Pinault-Thaury, 2013 .

Reactivity of III–V and II–VI semiconductors toward hydrogen: surface modification and evolution in air

A. Etcheberry, D. Ballutaud, P. Mierry, 1995 .

Nanosized Electrochemical Cells Operated by AFM Conducting Probes

O. Schneegans, D. Ballutaud, A. Moradpour, 2004 .

Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injection

V. Kilchytska, A. Nazarov, D. Ballutaud, 2003 .