J. Demenet

发表

Dislocation microstructures in Si plastically deformed at RT

J. Rabier, H. Garem, P. Cordier, 2000 .

On the nucleation of shuffle dislocations in Si

J. Rabier, J. Demenet, 2005 .

TEM observations of the coexistence of perfect and dissociated dislocations in SiC under high stress

J. Rabier, J. Demenet, X. Milhet, 2005 .

Plastic deformation of silicon between 20 °C and 425 °C

J. Rabier, J. Chen, L. Wang, 2007 .

Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study

T. Ouisse, D. Chaussende, J. Rabier, 2011 .

Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals ?

J. Rabier, J. Barbot, J. Demenet, 1998 .

Deformation-induced dislocations in 15R-SiC grown by sublimation

J. Demenet, P. Pirouz, S. Y. Yoon, 2001 .

Dislocation Sub-Boundaries in As-Grown ?-Silicon Nitride

J. Rabier, H. Garem, J. Demenet, 2002 .

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

H. Garem, J. Desoyer, J. Demenet, 1989 .

Dislocations studies in β-silicon nitride

J. Rabier, T. Rouxel, H. Garem, 1997 .

Plasticity and deformation microstructure of 4H‐SiC below the brittle‐to‐ductile transition

J. Rabier, J. Demenet, L. Thilly, 2007 .

Silicon micropillars: high stress plasticity

J. Rabier, J. Michler, J. Demenet, 2013 .

Characterization of room-temperature plastic deformation of ß-Si3N4 by atomic force microscopy and transmission electron microscopy

J. Rabier, J. Demenet, X. Milhet, 2001 .

Chapter 93 Dislocations in Silicon at High Stress

J. Rabier, L. Pizzagalli, J. Demenet, 2010 .

Instrumental modifications for compressive testing under hydrostatic confining conditions

J. Rabier, J. Castaing, P. Veyssiére, 1985 .

PLASTIC BEHAVIOR OF 4H-SiC SINGLE CRYSTALS DEFORMED AT LOW STRAIN RATES

J. Demenet, P. Pirouz, M. Hong, 2000 .

Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples

J. Demenet, P. Pirouz, M. Hong, 2000 .

Dislocation substructures in plastically deformed A1N

J. Rabier, J. Demenet, V. Audurier, 1993 .

Tem Study of Dislocations in Plastically Deformed AlN

J. Rabier, J. Demenet, V. Audurier, 1992 .

On a change in deformation mechanism in silicon at very high stress: new evidences

J. Rabier, J. Demenet, 2001 .

On the plasticity of silicon below 650°C

J. Rabier, P. Veyssiére, J. Desoyer, 1984 .

On transition temperatures in the plasticity and fracture of semiconductors

J. Demenet, P. Pirouz, M. Hong, 2001 .

Low Temperature, High Stress Plastic Deformation of Semiconductors: The Silicon Case

J. Rabier, J. Demenet, 2000 .

PARTIAL DISLOCATION SOURCE IN INSB : A NEW MECHANISM

J. Rabier, H. Garem, J. Demenet, 1999 .

Transition Temperatures in Plastic Yielding and Fracture of Semiconductors

L. Kubin, J. Demenet, P. Pirouz, 1999 .

Plasticity of InSb at Low Temperature: Analysis of Microstructures by Transmission Electron Microscopy

J. Rabier, H. Garem, J. Demenet, 1998 .

Plastic deformation of GaAs single crystals at room temperature and the influence of doping

J. Rabier, P. Veyssiére, H. Garem, 1985 .

Plastic Deformation of Intrinsic and Extrinsic Silicon Below 500°C

J. Rabier, J. Castaing, P. Veyssiére, 1984 .

Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

H. M. Hobgood, J. Demenet, P. Pirouz, 2003 .

Positron annihilation of defects in silicon deformed at different temperatures

J. Rabier, R. Krause-Rehberg, J. Demenet, 2003 .

Dislocation Activity in 4H-SiC in the Brittle Domain

J. Rabier, J. Demenet, A. Mussi, 2010 .

Effect of electronic doping on the plasticity of homoepitaxial 4H-SiC single crystals

J. Demenet, A. Mussi, J. Rabier, 2011 .

Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC

J. Rabier, J. Demenet, C. Tromas, 2012 .

A Revisitation of Some Problems of Dislocations in Silicon

J. Rabier, D. Eyidi, J. Demenet, 2008 .

Plastic deformation of Si at low temperature under high confining pressure

J. Rabier, H. Garem, P. Cordier, 2001 .

Influence of Dislocations on I–V Characteristics of Schottky Diodes Prepared on n‐Type 6H‐SiC

J. Barbot, C. Blanchard, J. Demenet, 2000 .

AIN plastic deformation between room temperature and 800°C. I. Dislocation substructure observations

J. Rabier, J. Demenet, V. Audurier, 1998 .

On the Plasticity and Fracture of Semiconductors

Shanling Wang, J. Demenet, P. Pirouz, 2004 .

Plastic deformation by shuffle dislocations in silicon

J. Rabier, P. Cordier, J. Demenet, 2004 .

Transition from brittle fracture to ductile behavior in 4H–SiC

H. M. Hobgood, J. Demenet, P. Pirouz, 2003 .

Microstructures of 4H?SiC single crystals deformed under very high stresses

J. Rabier, P. Cordier, J. Demenet, 2002 .

Transition from brittleness to ductility in SiC

H. M. Hobgood, J. Demenet, P. Pirouz, 2002 .

The Brittle-to-Ductile Transition in 4H-SiC

J. Demenet, P. Pirouz, H. McD. Hobgood, 2002 .

TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane

J. Rabier, J. Demenet, A. Mussi, 2006 .

Dislocations in 4H- and 3C-SiC single crystals in the brittle regime

J. Rabier, D. Eyidi, J. Demenet, 2013 .

Theoretical study of pressure effect on the dislocation core properties in semiconductors

J. Rabier, L. Pizzagalli, J. Demenet, 2009 .

AIN plastic deformation between room temperature and 800°C. II. Dislocation core structures in basal and prismatic planes

J. Rabier, J. Demenet, V. Audurier, 1998 .