V. Emtsev

发表

Point defects in germanium: Reliable and questionable data in radiation experiments

V. Emtsev, 2006 .

Photoluminescence of n‐InN with low electron concentrations

W. Schaff, V. Davydov, A. Sakharov, 2006 .

Manifestation of the equilibrium hole distribution in photoluminescence of n‐InN

W. Schaff, V. Davydov, A. Sakharov, 2005 .

Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon

S. Pizzini, A. L. Donne, S. Binetti, 2003 .

Effect of pressure-enhanced single step annealing on the silicon photoluminescence

S. Pizzini, A. L. Donne, S. Binetti, 2002 .

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons

V. Emtsev, N. Abrosimov, V. Kozlovski, 2015 .

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons

R. Krause-Rehberg, V. Emtsev, N. Abrosimov, 2021, Journal of physics. Condensed matter : an Institute of Physics journal.

Radiation-produced defects in germanium: Experimental data and models of defects

V. Emtsev, D. Poloskin, V. Kozlovski, 2017 .

Shallow donors in silicon coimplanted with rare-earth ions and oxygen

C. Ammerlaan, N. Sobolev, V. Emtsev, 2001 .

Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

High-resolution magnetic-resonance spectroscopy of thermal donors in silicon

C. Ammerlaan, A. Gusev, V. Emtsev, 2006 .

A gauge invariant approach to the Raman scattering in heavily doped crystals

A. N. Smirnov, R. Baltz, V. Davydov, 2005 .

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

V. Emtsev, G. Oganesyan, 2020, Semiconductors.

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

V. V. Emtsev, H. Ohyama, V. Emtsev, 2009 .

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

V. Emtsev, D. Poloskin, N. Abrosimov, 2022, Journal of Applied Physics.

Positron annihilation on defects in silicon irradiated with 15 MeV protons

R. Krause-Rehberg, V. Emtsev, M. Elsayed, 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

A. Chroneos, V. Emtsev, E. Sgourou, 2011 .

Positron probing of disordered regions in neutron‐irradiated silicon

N. Bennett, R. Krause-Rehberg, V. Emtsev, 2016 .

Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

R. Krause-Rehberg, V. Emtsev, N. Abrosimov, 2017 .

Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

V. Emtsev, I. Antonova, C. A. Londos, 2005 .

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon

D. I. Kryzhkov, V. Emtsev, D. Kuritsyn, 2003 .

Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure

C. Ammerlaan, V. Emtsev, A. Misiuk, 2001 .

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

V. V. Emtsev, V. Emtsev, D. Poloskin, 2020, Semiconductors.

R. Krause-Rehberg, V. Emtsev, V. Kozlovski, 2015 .

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

R. Krause-Rehberg, V. Emtsev, M. Elsayed, 2015 .

Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

V. Emtsev, D. Poloskin, N. Abrosimov, 2018, Semiconductors (Woodbury, N.Y.).

Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons

V. V. Emtsev, V. Emtsev, D. Poloskin, 2016 .

Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification

K. Emtsev, A. Lebedev, V. Emtsev, 2008 .

Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation

V. V. Emtsev, A. Lebedev, V. Emtsev, 2010 .

Electrical properties of diluted n- and p-Si1 − xGex at small x

V. Emtsev, N. Abrosimov, G. Oganesyan, 2014, Semiconductors.