D. Poloskin

发表

Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

V. V. Emtsev, K. Emtsev, P. Ehrhart, 2007 .

Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C

V. V. Emtsev, A. Mudryi, D. Poloskin, 2003 .

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

V. V. Emtsev, N. Sobolev, D. Poloskin, 2009 .

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

Impurity effects in silicon implanted with rare-earth ions,

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

Radiation-induced defects in n-type GaN and InN

V. V. Emtsev, N. M. Shmidt, E. Haller, 2001 .

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

V. V. Emtsev, V. Emtsev, D. Poloskin, 2020, Semiconductors.

Radiation-produced defects in germanium: Experimental data and models of defects

V. Emtsev, D. Poloskin, V. Kozlovski, 2017 .

Radiation-produced defects in n-GaN

A. N. Smirnov, V. V. Emtsev, V. Davydov, 2007 .

Shallow donors in silicon coimplanted with rare-earth ions and oxygen

C. Ammerlaan, N. Sobolev, V. Emtsev, 2001 .

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

E. V. Gushchina, V. V. Emtsev, N. M. Shmidt, 2018, Semiconductors.

Measuring electrical parameters of semiconducting crystallites using Hall and Van der Pau methods in the slow-temperature-drift mode

D. Poloskin, D. Gets, 2017 .

Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation

V. V. Emtsev, I. Bodnar, V. Rud, 2009 .

Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions

V. V. Emtsev, I. Bodnar, V. Rud, 2006 .

Photosensitivity of photocells based on ZnO/CdS/Cu(In, Ga)Se2 heterostructures and exposed to γ-ray radiation

V. V. Emtsev, V. Rud, Y. Rud’, 2005 .

Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon

K. Itoh, D. Poloskin, H. Morishita, 2009 .

Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons

V. V. Emtsev, V. Emtsev, D. Poloskin, 2016 .

Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

V. V. Emtsev, L. Kimerling, N. Sobolev, 2001 .

Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium

V. V. Emtsev, J. Michel, L. Kimerling, 1999 .

A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

V. V. Emtsev, N. Sobolev, D. Poloskin, 1998 .

Shallow Donor Centers in Erbium-Implanted Silicon Subjected to High-Temperature Annealing

V. V. Emtsev, N. Sobolev, D. Poloskin, 1996 .

Influence of Point Defects on Defect Formation in Si:Er

V. V. Emtsev, M. I. Makovijchuk, N. Sobolev, 1995 .

Dynamic nuclear polarization of 29Si via spin S=1 centers in isotopically controlled silicon

K. Itoh, D. Poloskin, T. Itahashi, 2009 .

Electron irradiation of heavily doped silicon: group-III impurity ion pairs

V. V. Emtsev, P. Ehrhart, D. Poloskin, 1999 .

Surface gettering of background impurities and defects in GaAs wafers

V. V. Emtsev, D. Poloskin, A. T. Gorelenok, 2001 .

Quantum supercurrent and Andreev reflection in silicon nanostructures

D. Poloskin, L. Klyachkin, A. Malyarenko, 2009 .

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

N. Sobolev, D. Poloskin, A. Loshachenko, 2013 .

Structural defects in YBa2Cu3O7−δ superconducting films induced by gamma irradiation

I. N. Goncharuk, V. V. Emtsev, V. Davydov, 1994 .

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band

D. Poloskin, V. Kozub, N. V. Agrinskaya, 2010 .

Suppression of the virtual anderson transition in the impurity band of doped quantum well structures

D. Poloskin, V. Kozub, N. V. Agrinskaya, 2011, 1108.6158.

Virtual Anderson transition in a narrow impurity band of doped p-GaAs/AlGaAs layers

D. Poloskin, V. Kozub, N. V. Agrinskaya, 2007 .

The destruction of the virtual Anderson transition in a narrow impurity band of doped quantum well structures

D. Poloskin, V. Kozub, N. V. Agrinskaya, 2012 .

Persistent photoconductivity and electron paramagnetic resonance in zinc oxide ceramics

V. Zakhvalinskii, D. Poloskin, R. Laiho, 2009 .

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

V. Emtsev, D. Poloskin, N. Abrosimov, 2022, Journal of Applied Physics.

Point defects in gamma-irradiated n-GaN

A. N. Smirnov, V. V. Emtsev, T. Rotter, 2000 .

Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation

V. V. Emtsev, A. Lebedev, D. Poloskin, 2009 .

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

V. V. Emtsev, D. I. Kryzhkov, V. Davydov, 2003 .

Optical and dynamic nuclear polarization of 29 Si nuclei via photoexcited triplet states of oxygen-vacancy complexes in isotopically controlled silicon

K. Itoh, D. Poloskin, T. Itahashi, 2013 .

Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers

V. V. Emtsev, D. Poloskin, A. Usikov, 2001 .

Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge

V. Emtsev, D. Poloskin, N. Abrosimov, 2018, Semiconductors (Woodbury, N.Y.).

Spin-dependent negative photoconductivity in silicon

D. Poloskin, V. Mashkov, N. Bagraev, 1985 .

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

A. N. Smirnov, V. V. Emtsev, V. Davydov, 1997 .

Behavior of electrically active point defects in irradiated MOCVD n-GaN

A. N. Smirnov, V. V. Emtsev, V. Davydov, 1999 .

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

V. V. Emtsev, T. Rotter, V. Davydov, 2000 .

Effect of Annealing on Defects in As‐Grown and γ‐Ray Irradiated n‐GaN Layers

Igor L. Krestnikov, A. A. Lebedev, Andrei Osinsky, 1999 .