K. B. Nielsen

发表

Low-temperature irradiation-induced defects in germanium: In situ analysis

A. Larsen, A. Mesli, L. Dobaczewski, 2008 .

Evolution of defect structures in silicon after low temperature implantation of hydrogen

K. B. Nielsen, B. Nielsen, 1999 .

Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

V. V. Litvinov, V. Markevich, A. Peaker, 2008 .

Strength functions in the β-decay of short-lived fission products

K. B. Nielsen, G. Rudstam, K. Johansen, 1973 .

Negative-U property of interstitial hydrogen in GaAs

A. Larsen, L. Dobaczewski, K. B. Nielsen, 2008 .

Nuclear Quadrupole Interaction ofCd111as an Impurity in In, InBi, andIn2Bi in Relation to Ion Implantation

C. Budtz-Jørgensen, K. B. Nielsen, H. Ravn, 1973 .

First principles investigation of19F* nuclear quadrupole interaction in fourth group tetrafluorides

T. P. Das, T. Briere, K. B. Nielsen, 1995 .

Time Differential Studies of 166 Er in Copper

G. Heestand, K. B. Nielsen, H. Ravn, 1971 .

Time-dependent hyperfine interaction of 169Tm in iron

H. Bernas, K. B. Nielsen, B. Deutch, 1968 .

Saddle point for oxygen reorientation in the vicinity of a silicon vacancy

V. Markevich, A. Peaker, L. Dobaczewski, 2003 .

Electron paramagnetic resonance study of hydrogen-vacancy defects in crystalline silicon

K. B. Nielsen, S. Herstrom, P. Stallinga, 1998 .

Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

K. B. Nielsen, P. Stallinga, B. Nielsen, 1997 .

Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

A. Larsen, J. Weber, L. Dobaczewski, 2009 .

On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods

I. Stensgaard, G. Weyer, K. B. Nielsen, 2008 .

K-shell particle parameters for E2 transitions in 152Sm and 154Gd

K. B. Nielsen, N. Rud, J. Overgård, 1969 .

The electric quadrupole hyperfine interaction at sites of ion-implanted fluorine in amorphous and crystalline silicon

I. Stensgaard, T. Lauritsen, G. Weyer, 1984 .

Quadrupole interactions of fluorine at implantation sites in germanium and silicon

P. Nielsen, T. Lauritsen, G. Weyer, 1983 .

Radiogenic Sn-Vacancy Complexes in FCC Nickel and Cobalt

G. Weyer, K. B. Nielsen, J. W. Petersen, 1987 .

Magnetic hyperfine fields of vacancy-associated119Sn in ion-implanted nickel

G. Weyer, K. B. Nielsen, H. Grann, 1986 .

Laplace-transform deep-level spectroscopy: the technique and its applications to the study of point defects in semiconductors

Anthony R. Peaker, A. Peaker, L. Dobaczewski, 2004 .

Levels and transitions in 133Cs

K. B. Nielsen, S. Törnkvist, J. Thun, 1966 .

The E2 + M1 decay of the 2+ beta-vibrational state in 178Hf

K. B. Nielsen, N. Rud, H. Nielsen, 1968 .

The state at 1576 keV in Sm152

K. B. Nielsen, K. Bisgard, J. Sodemann, 1963 .

Perturbed angular correlation measurements with β-particles from 154Eu

K. B. Nielsen, B. Deutch, 1967 .

Internal magnetic field of lutecium in iron and g factor in 175Lu

F. Boehm, K. B. Nielsen, B. Deutch, 1966 .

Single and double K vacancies of fluorine ions moving in carbon at 2< or =v/v/sub 0/< or =9

P. Nielsen, K. B. Nielsen, N. Rud, 1983 .

M1 admixtures in transitions from γ-vibrational states in 152Sm, 154Gd and 156Gd

K. B. Nielsen, N. Rud, 1970 .

K-Shell Cross Sections Extracted from Measured Charge-State Distributions for F and Si Ions Penetrating C

P. Nielsen, K. B. Nielsen, N. Rud, 1984 .

Radiation-enhanced substitution of fluorine recoil atoms into C-F bonds in MeV-proton bombardment of fluorinated hydrocarbons

K. B. Nielsen, B. Toft, 1981 .

Electric field gradients of recoil-implanted19F in metallic backings via the reaction9Be(12C,np)19F

W. Semmler, R. Sielemann, C. Budtz-Jørgensen, 1976 .

Bond-center hydrogen in dilute Si 1-x Ge x alloys: Laplace deep-level transient spectroscopy

A. Peaker, L. Dobaczewski, K. B. Nielsen, 2003 .

E center in silicon has a donor level in the band gap.

A. Larsen, R. Jones, P. Briddon, 2006, Physical review letters.

The Aarhus red giants challenge

J. Christensen-Dalsgaard, S. Hekker, A. Miglio, 2019, Astronomy & Astrophysics.

The BAyesian STellar Algorithm (BASTA): a fitting tool for stellar studies, asteroseismology, exoplanets, and Galactic archaeology

J. Christensen-Dalsgaard, G. Davies, M. Lund, 2021, 2109.14622.

Laplace deep level transient spectroscopy: Embodiment and evolution

V. Markevich, B. Hamilton, A. Peaker, 2012 .

Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si

A. Peaker, S. Öberg, R. Jones, 2003 .

Electrical activity of carbon-hydrogen centers in Si

A. Peaker, B. Hourahine, S. Öberg, 2002 .

Acceptor state of monoatomic hydrogen in silicon and the role of oxygen

L. Dobaczewski, K. B. Nielsen, B. Nielsen, 2002 .

BOND-CENTERED HYDROGEN IN SILICON STUDIED BY IN SITU DEEP-LEVEL TRANSIENT SPECTROSCOPY

K. B. Nielsen, J. Andersen, B. Nielsen, 1999 .

Piezospectroscopic analysis of mobile defects in semiconducting materials

V. Markevich, A. Peaker, L. Dobaczewski, 2008 .

Piezospectroscopic studies of the re-orientation process of defect complexes

A. Peaker, L. Dobaczewski, K. B. Nielsen, 2003 .

DLTS studies of irradiation-induced defects in p-type germanium

A. Larsen, A. Mesli, K. B. Nielsen, 2006 .

The antimony-vacancy defect in p-type germanium

A. Larsen, J. L. Hansen, P. Bomholt, 2005 .

Donor level of bond-center hydrogen in germanium

V. Markevich, A. Peaker, L. Dobaczewski, 2004 .

Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

L. Dobaczewski, K. B. Nielsen, B. Nielsen, 1999 .

LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4 GOLD-HYDROGEN COMPLEX IN SILICON

P. Deixler, A. Larsen, A. Peaker, 1998 .

Significance of blackbody radiation in deep‐level transient spectroscopy

K. B. Nielsen, E. Andersen, 1996 .

Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon

A. Peaker, B. Hourahine, S. Öberg, 2001 .

The As2V complex in silicon: Band-gap levels, migration and annealing

A. Larsen, V. Privitera, A. Mesli, 2006 .

Formation of shallow donor in fluorine‐implanted silicon

K. B. Nielsen, B. Holm, 1996 .