M. Takenaka

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

S. Selberherr, R. Dutton, C. Jungemann, 1994 .

Impact ionization model for full band Monte Carlo simulation

Y. Kamakura, K. Taniguchi, C. Hamaguchi, 1994 .

A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model

Y. Kamakura, K. Taniguchi, C. Hamaguchi, 1994 .

Adjustable Parameter Free Monte Carlo Simulation for High Field Carrier Transport

C. Hamaguchi, T. Kunikiyo, H. Mizuno, 1993, 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest].

A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation

K. Taniguchi, C. Hamaguchi, T. Kunikiyo, 1996 .

Adjustable Parameter Free Monte Carlo Siniulation For Electron Transport In Silicon Including Full Band Structure

K. Taniguchi, C. Hamaguchi, H. Mizuno, 1993, [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).