G. Lupina

发表

Vertical Graphene Base Transistor

J. Scheytt, Yahong Xie, M. Ostling, 2011, IEEE Electron Device Letters.

A graphene-based hot electron transistor.

M. Ostling, A. Smith, M. Lemme, 2012, Nano letters.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors.

A. D. Smith, M. Ostling, A. Smith, 2015, Nanoscale.

Going ballistic : Graphene hot electron transistors

A. Gnudi, M. Ostling, F. Driussi, 2015, 1509.01025.

Direct growth of HfO2 on graphene by CVD

J. Dabrowski, A. Wolff, W. Mehr, 2015 .

Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

C. Wenger, A. Göritz, M. Fraschke, 2016, Scientific reports.

Graphene growth on Ge(100)/Si(100) substrates by CVD method

W. Strupinski, J. Baranowski, G. Lupina, 2016, Scientific Reports.

Contact resistance and mobility in back-gate graphene transistors

A. Grillo, A. Di Bartolomeo, G. Lupina, 2020, Nano Express.

Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr2O3(0001)∕Si(111) support systems

C. Wenger, P. Zaumseil, T. Schroeder, 2005 .

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

G. Carapella, F. Romeo, P. Sabatino, 2015, Nanotechnology.

Characterization of group II hafnates and zirconates for metal–insulator–metal capacitors

G. Kozłowski, T. Schroeder, P. Dudek, 2011 .

Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization

C. Wenger, T. Schroeder, A. Mane, 2006 .

Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications

C. Wenger, J. Dabrowski, G. Lippert, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

C. Wenger, J. Bartha, C. Strobel, 2017 .

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

G. Luongo, A. Di Bartolomeo, T. Schroeder, 2017, 1701.06541.

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

P. Zaumseil, T. Schroeder, C. Walczyk, 2010 .

FFlexCom – High Frequency Flexible Bendable Electronics for Wireless Communication Systems

Shabnam Mohammadi Naghadeh, R. Weigel, S. Mannsfeld, 2017 .

Perovskite BaHfO3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications

C. Wenger, H. Müssig, G. Lupina, 2009 .

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

G. Carapella, F. Romeo, P. Sabatino, 2015, Nanotechnology.

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

C. Wenger, H. Müssig, G. Lupina, 2008 .

Thermal stability of Pr silicate high-k layers on Si(001)

C. Wenger, T. Schroeder, J. Dabrowski, 2006 .

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

G. Luongo, A. Di Bartolomeo, T. Schroeder, 2016, 1607.06584.

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

C. Wenger, J. Bartha, C. Strobel, 2016, 1605.05099.

Graphene/Si Schottky diodes

G. Luongo, T. Schroeder, A. Bartolomeo, 2016 .

Interface Properties of Pr x Al 2-x O 3 (x = 0 to 2) Dielectrics on TiN Studied by Synchrotron Radiation X-ray Photoelectron Spectroscopy

C. Wenger, T. Schroeder, H. Müssig, 2007 .

Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

C. Wenger, P. Baumann, G. Lupina, 2012 .

Deposition of BaHfO3 Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD

C. Wenger, T. Katkus, Raimondas Galvelis, 2009 .

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

F. Romeo, T. Schroeder, R. Citro, 2011, Nanotechnology.

Titanium-added praseodymium silicate high-k layers on Si(001)

C. Wenger, T. Schroeder, A. Mane, 2005 .

Basic investigation of HfO2 based metal–insulator–metal diodes

C. Wenger, A. Devi, M. Albert, 2011 .

Deposition of thin silicon layers on transferred large area graphene

Grzegorz Lupina, Wolfgang Mehr, Mindaugas Lukosius, 2013, 1401.0416.

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

C. Wenger, T. Schroeder, D. Schmeißer, 2007 .

Interface reactivity of Pr and SiO2 at 4H-SiC(0 0 0 1)

D. Schmeißer, G. Lupina, H. Muessig, 2005 .

Praseodymium silicate layers with atomically abrupt interface on Si(100)

C. Wenger, T. Schroeder, A. Mane, 2005 .

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

A. Grillo, A. Bartolomeo, G. Lupina, 2019, 1912.04623.

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.

G. Capellini, M. Lehmann, Yahong Xie, 2016, ACS applied materials & interfaces.

Residual metallic contamination of transferred chemical vapor deposited graphene.

Mikael Östling, Sam Vaziri, Christian Wenger, 2015, ACS nano.

Graphene Grown on Ge(001) from Atomic Source

J. Maultzsch, T. Schroeder, J. Avila, 2013, 1312.5425.

Graphene directly grown on SiO2-based insulators

M. Lemme, J. Dabrowski, W. Mehr, 2011, 2011 Semiconductor Conference Dresden.

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Grzegorz Lupina, Gang Niu, Thomas Schroeder, 2016, Nanotechnology.

Direct graphene growth on insulator

Max C. Lemme, Charles M. Marcus, Grzegorz Lupina, 2011, 1106.2070.

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates.

S. Schulze, Y. Yamamoto, T. Schroeder, 2016, ACS applied materials & interfaces.

Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors

Grzegorz Lupina, Thomas Schroeder, T. Schroeder, 2014 .

Heteroepitaxial praseodymium sesquioxide films on Si(111) : A new model catalyst system for praseodymium oxide based catalysts

M. Bäumer, C. Wenger, A. Schaefer, 2007 .

Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111)

C. Wenger, J. Zegenhagen, I. Joumard, 2005 .

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

G. Capellini, W. Masselink, M. Lehmann, 2016, ACS applied materials & interfaces.

Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

A. Wolff, W. Mehr, G. Lupina, 2013, 1311.0988.

Graphene Synthesis and Processing on Ge Substrates

Yuji Yamamoto, Grzegorz Lupina, Andreas Mai, 2017 .

Invited) Graphene Synthesis and Processing on Ge Substrates

T. Schroeder, A. Mai, A. Trusch, 2016 .

Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

J. Maultzsch, T. Schroeder, J. Avila, 2016, Scientific Reports.

Direct growth of low-doped graphene on Ge/Si(001) surfaces

J. Maultzsch, T. Schroeder, J. Avila, 2016, 1604.02315.

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

P. Zaumseil, T. Schroeder, C. Walczyk, 2009 .

Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

T. Schroeder, G. Lippert, G. Lupina, 2014 .

Molecular beam growth of micrometer-size graphene on mica

J. Maultzsch, M. Lemme, W. Mehr, 2013 .

MIM capacitors using amorphous high-k PrTixOy dielectrics

Anil U. Mane, R. Sorge, J. Dbrowski, 2005 .

A manufacturable process integration approach for graphene devices

Max C. Lemme, Mikael Östling, Sam Vaziri, 2013 .

Process integration of Pr-based high-k gate dielectrics

C. Wenger, P. Zaumseil, T. Schroeder, 2005 .

Molecular beam epitaxy of graphene on mica

J. Maultzsch, M. Lemme, W. Mehr, 2012, 1205.6591.

Optical properties and band gap characterization of high dielectric constant oxides

C. Wenger, P. Zaumseil, G. Lupina, 2012 .

Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

P. Zaumseil, T. Schroeder, M. Schubert, 2014 .

Graphene for Silicon Microelectronics: Ab Initio Modeling of Graphene Nucleation and Growth

G. Lippert, G. Lupina, J. Dabrowski, 2016 .

Atomic layer deposition of Al2O3 on NF3-pre-treated graphene

Christian Wenger, Grzegorz Lupina, Johann W. Bartha, 2015, Microtechnologies for the New Millennium.

An integration approach for graphene double-gate transistors

Max C. Lemme, Mikael Östling, Sam Vaziri, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Development of graphene process control by industrial optical spectroscopy setup

Claus Villringer, Andreas Mai, Grzegorz Lupina, 2017, Optical Metrology.

Stacking behavior of twin-free type-Boriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems

M. Bäumer, P. Zaumseil, T. Schroeder, 2012 .

Graphene base hot electron transistors with high on/off current ratios

M. Ostling, A. Smith, M. Lemme, 2013, 71st Device Research Conference.

PDMS-supported graphene transfer using intermediary polymer layers

Max C. Lemme, Mikael Östling, Sam Vaziri, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Dielectric and structural properties of thin SrHfO3 layers on TiN

H. Müssig, G. Lippert, G. Lupina, 2008 .

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

C. Wenger, P. Zaumseil, C. Walczyk, 2008 .

Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems

Frank Ellinger, Zhipeng Zhang, Robert Weigel, 2017, 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS).