C. Sachs

Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation

M. Rodwell, M. Fischetti, L. Wangt, 2007, 2007 IEEE International Electron Devices Meeting.

Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons

S. Aboud, M. Fischetti, Z. Ong, 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

Yan Zhang, Seonghoon Jin, Jiseok Kim, 2007, IEEE Transactions on Electron Devices.

Physics of electronic transport in low-dimensionality materials for future FETs

S. Aboud, M. Fischetti, Z. Ong, 2015, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETs

M. Fischetti, C. Sachs, S. Narayanan, 2008 .