J. Kolnik

发表

Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

K. Brennan, P. Ruden, R. Wang, 1997 .

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

K. Brennan, P. Ruden, E. Bellotti, 1997 .

Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

K. Brennan, P. Ruden, R. Wang, 1996 .

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

K. Brennan, P. Ruden, R. Wang, 1995 .

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave‐vector‐dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

K. Brennan, Yang Wang, J. Kolnik, 1995 .

Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

K. Brennan, P. Ruden, J. Kolnik, 1996 .

DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE

Kevin F. Brennan, P. Paul Ruden, K. Brennan, 1997 .

Properties of metal-semiconductor contacts with plasma deposited silicon nitride interfacial layers

J. Ivančo, J. Kolnik, 1993 .

Theoretical investigation of wave‐vector‐dependent analytical and numerical formulations of the interband impact‐ionization transition rate for electrons in bulk silicon and GaAs

K. Brennan, Yang Wang, J. Kolnik, 1994 .

Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN

Kevin F. Brennan, P. Paul Ruden, K. Brennan, 1996 .

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

J. Olivier, J. Ivančo, J. Kolnik, 1993 .

Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure

K. Brennan, P. Ruden, R. Wang, 1995 .

Theoretical study of electron initiated impact ionization rate in bulk GaN using a wave vector dependent numerical transition rate formulation

K. Brennan, P. Ruden, R. Wang, 1995 .

Universal MOSFET gate impedance model for 200 MHz–20 GHz frequency range

C. Washburn, P. R. Mukund, J. Kolnik, 2006 .

Accurate performance prediction of multi-GHz CML with data run-length variations

Steve Howard, P. R. Mukund, Clyde Washburn, 2005, 2005 IEEE International Symposium on Circuits and Systems.

Effects of technology and dimensional scaling on input loss prediction of RF MOSFETs

Steve Howard, Tejasvi Das, P. R. Mukund, 2005, 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design.