Gyo-Young Jin

An isotropic two band model for hot electron transport in silicon: Including electron emission probability into SiO2

Y. J. Park, R. Dutton, H. Min, 1995 .

A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation

R. Dutton, E. Kan, Gyo-Young Jin, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

A Simple Hot Electron Transport Model And Its Prediction Of Si-SiO/sub 2/ Injection Probability

H. Min, Gyo-Young Jin, Young-June Park, 1993, [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD).