D. Ventura

Short-range electron-electron scattering in silicon with a non-parabolic band structure

A. Gnudi, G. Baccarani, D. Ventura, 1995 .

A deterministic approach to the solution of the BTE in semiconductors

A. Gnudi, G. Baccarani, D. Ventura, 1995 .

Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation

A. Gnudi, G. Baccarani, M. Vecchi, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

One-dimensional Simulation of a Bipolar Transistor by means of Spherical Harmonics Expansion of the Boltzmann Transport Equation *

A. Gnudi, G. Baccarani, D. Ventura, 2007 .

Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation

A. Gnudi, G. Baccarani, D. Ventura, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Impact-ionization in silicon at large operating temperature

Massimo Rudan, Giorgio Baccarani, L. Zullino, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors

Antonio Gnudi, Giorgio Baccarani, D. Ventura, 1992 .

A CRITICAL REVIEW OF THE FUNDAMENTAL SEMICONDUCTOR EQUATIONS

A. Gnudi, G. Baccarani, D. Ventura, 1994 .