J. Kotani

发表

A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis

K. Fukuda, J. Hattori, H. Asai, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Leakage mechanism in GaN and AlGaN Schottky interfaces

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

Integrated Tunable Quantum-Dot Laser for Optical Coherence Tomography in the 1.7 $\mu{\rm m}$ Wavelength Region

Yuqing Jiao, X. J. M. Leijtens, H. P. M. M. Ambrosius, 2012, IEEE Journal of Quantum Electronics.

Integrated Tunable Quantum Dot Laser for Optical Coherence Tomography in the 1.7?m Wavelength Region

Mk Meint Smit, Yuqing Jiao, R Richard Nötzel, 2011 .

Monolithically integrated continuously tunable InP-based quantum-dot laser source in the 1.6 to 1.8?m wavelength region

M. Smit, X. Leijtens, Y. Jiao, 2010 .

Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

E. Bente, R. Notzel, J. Kotani, 2010, 2010 12th International Conference on Transparent Optical Networks.

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

M. Smit, M. Smit, E. Bente, 2009 .

Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates

N. Okamoto, T. Ohki, Y. Niida, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

R. Nötzel, Y. Jiao, J. Kotani, 2011 .

New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor

K. Imanishi, T. Kikkawa, A. Yamada, 2013 .

Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, J. Kotani, 2020, Journal of Crystal Growth.

Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE

A. Yamada, J. Yaita, J. Kotani, 2021 .

Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

T. Hashizume, J. Kotani, M. Tajima, 2009 .

InAs/InP(100) QD waveguide photodetectors for a monolithically integrated optical coherence tomography system around 1.7 μm

R. Nötzel, Y. Jiao, J. Kotani, 2012 .

600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

K. Imanishi, K. Shono, M. Kanamura, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Suppression of threshold voltage shift for normally-Off GaN MIS-HEMT without post deposition annealing

M. Kanamura, T. Ohki, N. Okamoto, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density

N. Okamoto, T. Ohki, A. Yamada, 2021 .

UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure

T. Hashizume, J. Kotani, Chihoko Mizue, 2009 .

Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates

A. Yamada, Keiji Watanabe, J. Yaita, 2020 .

Suppression of gate leakage current in in-situ grown AlN/InAlN/AlN/GaN heterostructures based on the control of internal polarization fields

A. Yamada, J. Kotani, N. Nakamura, 2017 .

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

N. Okamoto, T. Ohki, A. Yamada, 2020, Japanese Journal of Applied Physics.

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Masaru Sato, N. Okamoto, T. Ohki, 2019, Japanese Journal of Applied Physics.

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Masaru Sato, N. Okamoto, T. Ohki, 2019, IEEE Electron Device Letters.

Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process

N. Hara, T. Hashizume, N. Okamoto, 2020, Semiconductor Science and Technology.

Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

Seiya Kasai, Tamotsu Hashizume, Junji Kotani, 2007 .

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Tunneling injection of electrons at nanometer-scale Schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

T. Hashizume, J. Kotani, S. Kasai, 2008 .

Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

A. Yamada, Keiji Watanabe, J. Kotani, 2016 .

Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy

R. Nötzel, P. Veldhoven, J. Kotani, 2009 .

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Masaru Sato, N. Okamoto, T. Ohki, 2020, Applied Physics Express.

Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

Tamotsu Hashizume, Masamitsu Kaneko, Junji Kotani, 2006 .

Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition

Tamotsu Hashizume, Junji Kotani, T. Hashizume, 2009 .

First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

de T Tjibbe Vries, van Pj René Veldhoven, M. Smit, 2009 .

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Toru Nagashima, Y. Kumagai, M. Boćkowski, 2022, Applied Physics Express.

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Hideki Hasegawa, Tamotsu Hashizume, Noboru Negoro, 2005 .

Development of GaN HEMTs on GaN Substrates for Highly Efficient RF Amplifiers

Masaru Sato, N. Okamoto, T. Ohki, 2021 .

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

H. Hasegawa, T. Hashizume, M. Kaneko, 2006 .

Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility

J. Yaita, J. Kotani, N. Nakamura, 2021 .

InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 µm.

Sailing He, Yuqing Jiao, Richard Nötzel, 2012, Optics express.