A. Dobbie

发表

Investigation of the electrical properties of Si₁-×Ge× channel pMOSFETs with high-κ dielectrics

A. Dobbie, 2007 .

T. Walther, Y. Qiu, M. Myronov, 2014 .

Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

V. Andrievskii, A. Feher, A. Dobbie, 2013, 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO).

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

M. Myronov, D. Leadley, V. Shah, 2008 .

Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

M. Myronov, D. Leadley, V. Shah, 2010 .

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

M. Myronov, D. Leadley, E. Parker, 2012 .

Anisotropy in the hole mobility measured along the [110] and [1̄10] orientations in a strained Ge quantum well

M. Myronov, D. Leadley, R. Beanland, 2014 .

Fractional Quantum Hall States in a Ge Quantum Well.

D. Leadley, A. Dobbie, O. Mironov, 2015, Physical review letters.

High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Strained Si and Ge Channels

M. Myronov, D. Leadley, E. Parker, 2010 .

Introduction to Part 1

D. Leadley, A. Dobbie, V. Shah, 2013 .

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

M. Myronov, D. Leadley, R. Beanland, 2012, Analytical chemistry.

O2+ probe‐sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells

M. Myronov, D. Leadley, R. Beanland, 2013 .

Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

M. Myronov, D. Leadley, T. Whall, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

M. Prunnila, M. Myronov, D. Leadley, 2015 .

Hole-phonon energy loss rate in boron doped silicon

M. Prunnila, M. Myronov, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Strain enhanced electron cooling in a degenerately doped semiconductor

M. Prunnila, J. Muhonen, M. Myronov, 2011, 1111.0465.

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

M. Myronov, D. Leadley, A. Dobbie, 2013 .

Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD

M. Myronov, D. Leadley, A. Dobbie, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration

M. Myronov, D. Leadley, V. Shah, 2012 .

Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy

T. Walther, M. Myronov, A. Dobbie, 2013 .

High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

M. Myronov, D. Leadley, V. Shah, 2011 .

High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform

M. Myronov, D. Leadley, V. Shah, 2010 .

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

D. Leadley, A. Dobbie, O. Mironov, 2017 .

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

M. Myronov, D. Leadley, T. Whall, 2012 .

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

James J. Mudd, I. Maskery, S. Wilkins, 2013, Crystal growth & design.

The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy

T. Walther, M. Myronov, D. Leadley, 2013 .

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

M. Myronov, D. Leadley, A. Dobbie, 2011 .

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

T. Walther, M. Myronov, D. Leadley, 2012 .