S. Chuang

发表

Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

A. Javey, S. Krishna, E. Plis, 2012, IEEE Electron Device Letters.

Performance Methodology and Characterization of a Multi-Fiber Expanded Beam Lensed Optical Interconnect

S. Chuang, D. Schoellner, J. Wakjira, 2016, 2016 IEEE 66th Electronic Components and Technology Conference (ECTC).

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Elena Plis, Sanjay Krishna, 2010, Nature.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

Jing Guo, Sanjay Krishna, Yu-Lun Chueh, 2012, Nano letters.

Ultrathin body InAs tunneling field-effect transistors on Si substrates

Elena Plis, Sanjay Krishna, Chenming Hu, 2011 .

High-performance single layered WSe₂ p-FETs with chemically doped contacts.

A. Javey, K. Takei, Toshitake Takahashi, 2012, Nano letters.

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

Ali Javey, Steven Chuang, Rehan Kapadia, 2014, Nano letters.

High-performance single layered WSe₂ p-FETs with chemically doped contacts.

A. Javey, K. Takei, Toshitake Takahashi, 2012, Nano letters.

MoS 2 P ‐ type Transistors and Diodes Enabled by High Work Function MoO x Contacts

C. Battaglia, A. Javey, R. Wallace, 2014 .

Ballistic Inas Nanowire Transistors

Jing Guo, A. Javey, R. Kapadia, 2022 .

KEHUA LIN ALL RIGHTS RESERVED ELLIPSOMETRY MEASUREMENTS OF CHEMICAL REACTIONS AND DIFFUSION PROCESSES IN POLYMER FILMS A Thesis Presented to The Graduate Faculty of The University of Akron In Partial Fulfillment of the Requirements for the Degree Master of Science

N. Zacharia, S. Jana, E. Amis, 2016 .

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Yu-Lun Chueh, Stefano Cabrini, Audrey Harker, 2016, Nature Communications.

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments.

C. Battaglia, A. Javey, R. Wallace, 2014, ACS nano.

High-gain inverters based on WSe2 complementary field-effect transistors.

Yuping Zeng, Ali Javey, Angada B Sachid, 2014, ACS nano.

Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn.

A. Javey, J. Ho, Z. Fan, 2010, Nano letters.

Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

A. Javey, R. Kapadia, Y. Chueh, 2013 .

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films.

A. Javey, Kevin Chen, D. Kiriya, 2015, Nano letters.

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Elena Plis, Sanjay Krishna, Yu-Lun Chueh, 2011 .

Low Dimensional Materials for Next Generation Electronics

S. Chuang, 2014 .

Low Dimensional Materials for Next Generation Electronics By Steven Chuang A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy

S. Chuang, 2014 .

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

C. Battaglia, A. Javey, R. Wallace, 2014, 1402.6632.

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Paul W. Leu, A. Javey, S. Krishna, 2010, Nature.

High-gain inverters based on WSe2 complementary field-effect transistors.

A. Javey, A. Sachid, Yongjing Lin, 2014, ACS nano.

Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn.

A. Javey, J. Ho, Z. Fan, 2010, Nano letters.