H. Goto

On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFET's

C. Jungemann, S. Yamaguchi, H. Goto, 1996, IEEE Electron Device Letters.

Convergence estimation for stationary ensemble Monte Carlo simulations

C. Jungemann, S. Yamaguchi, H. Goto, 1997 .

A 11.7 GHz 1/8-divider using 43 GHz Si high speed bipolar transistor with photoepitaxially grown ultra-thin base

T. Yamazaki, Takashi Ito, T. Yamazaki, 1990, International Technical Digest on Electron Devices.

Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors

C. Jungemann, S. Keith, S. Yamaguchi, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE

Christoph Jungemann, Bernd Meinerzhagen, H. Goto, 1998 .

Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

Christoph Jungemann, H. Goto, S. Decker, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Trench Isolation Schemes for Bipolar Devices --- Benefits and Limiting Aspects

H. Goto, K. Inayoshi, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.