Wei Lee

Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region

Ming-Jer Chen, Wei Lee, Yi-Hui Huang, 2013, IEEE Transactions on Electron Devices.

Vertical Transistor With n-Bridge and Body on Gate for Low-Power 1T-DRAM Application

A. Kranti, Jyi-Tsong Lin, Wei Lee, 2017, IEEE Transactions on Electron Devices.

Investigation of Anomalous Inversion C–V Characteristics for Long-Channel MOSFETs With Leaky Dielectrics: Mechanisms and Reconstruction

P. Su, Wei Lee, Ke-Wei Su, 2008, IEEE Transactions on Semiconductor Manufacturing.

Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in $\hbox{n}^{+}$-Polysilicon Ultrathin Gate Oxide nMOSFETs

Ming-Jer Chen, Chien‐Chih Lee, Kuan-Hao Cheng, 2011, IEEE Transactions on Electron Devices.

A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs

P. Su, Wei Lee, 2009, IEEE Transactions on Nanotechnology.

A comprehensive study of single-electron effects in multiple-gate MOSFETs

P. Su, Wei Lee, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

An Assessment of Single-Electron Effects in Multiple-Gate SOI MOSFETs with 1.6-nm Gate Oxide near Room Temperature

P. Su, Fu-Liang Yang, Chang-Yun Chang, 2005, 2005 International Semiconductor Device Research Symposium.

Characteristics of Recessed-Gate TFETs With Line Tunneling

Jyi-Tsong Lin, Chih-Ting Yeh, Qing-Tai Zhao, 2018, IEEE Transactions on Electron Devices.