Tae-Young Oh

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, IEEE Electron Device Letters.

C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm)

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).