A. Bayoumi

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, IEEE Electron Device Letters.

Studies of the Effect of Various Gas Species on Si-SiO 2 Interface Charges and Surface Roughness for Rapid Thermal Deposited Gate Oxides

J. Hauser, A. Bayoumi, J. Hauser, 1996 .

Plasma Induced Charging Damage On 30/spl Aring/ Gate Oxide Antenna MOS Capacitor Structure During Polysilicon Gate Etch

B. Langley, M. Cao, A. Bayoumi, 1997, 2nd International Symposium on Plasma Process-Induced Damage.

Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

T. Yoshitake, A. Bayoumi, M. B. Saleh, 2016 .

Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module

John R. Hauser, Amr M. Bayoumi, J. S. Montgomery, 1994, Other Conferences.

Massive parallelization of SPICE device model evaluation on GPU-based SIMD architectures

Yasser Y. Hanafy, Amr M. Bayoumi, A. Bayoumi, 2008, IFMT '08.

Parallel circuit simulation using the direct method on a heterogeneous cloud

Ahmed E. Helal, Yasser Y. Hanafy, Amr M. Bayoumi, 2015, 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC).

Scientific and Engineering Computing Using ATI Stream Technology

Michael Chu, Gamal Refai-Ahmed, Yasser Y. Hanafy, 2009, Computing in Science & Engineering.