S. Gupta

Analytical model of spatial distribution of potential along the channel of low band gap GNR-FET at high temperature

T. Muntasir, M. Islam, S. Gupta, 2012, 2012 International Conference on Informatics, Electronics & Vision (ICIEV).

Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser

K. Saraswat, J. Harris, Hai Lin, 2013, IEEE Journal of Selected Topics in Quantum Electronics.

GeSn channel nMOSFETs: Material potential and technological outlook

B. Douhard, K. Saraswat, A. Franquet, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Analytical modelling of current in higher width graphene nanoribbon field effect transistor

T. Muntasir, M. Islam, S. Gupta, 2012, 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC).

1.6 Tbps Silicon Photonics Integrated Circuit and 800 Gbps Photonic Engine for Switch Co-Packaging Demonstration

N. N. Tang, Syed S. Islam, M. Montazeri, 2020, Journal of Lightwave Technology.

Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs

R. Degraeve, D. Lin, N. Collaert, 2012, 2012 International Electron Devices Meeting.

ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts

A. Nainani, S. Lodha, S. Gupta, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Low-Contact-Resistivity Nickel Germanide Contacts on n+Ge with Phosphorus/Antimony Co-Doping and Schottky Barrier Height Lowering

Y. Nishi, S. Gupta, W. P. Maszara, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow

M. Heyns, G. Eneman, J. Mitard, 2010 .

Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks

A. Brand, Er-Xuan Ping, K. Schuegraf, 2012, 2012 International Electron Devices Meeting.