É. Frayssinet

发表

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

A. Michon, Y. Cordier, F. Giannazzo, 2019, ACS Applied Electronic Materials.

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Y. Cordier, É. Frayssinet, F. Cayrel, 2016 .

Blue Microlasers Integrated on a Photonic Platform on Silicon

B. Damilano, B. Gayral, F. Semond, 2018, ACS Photonics.

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

J. Brault, J. Massies, Y. Cordier, 2008 .

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Y. Cordier, C. Sonneville, A. Soltani, 2021, Energies.

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

J. Brault, J. Massies, B. Damilano, 2013 .

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

M. Portail, Y. Cordier, É. Frayssinet, 2019, Journal of Crystal Growth.

GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

M. Portail, Y. Cordier, B. Damilano, 2016 .

GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

S. Chenot, M. Leroux, F. Semond, 2009 .

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

A 5.7-THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

F. Julien, A. Lemaître, Y. Cordier, 2022, Applied Physics Letters.

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform.

S. Chenot, B. Damilano, B. Gayral, 2020, Optics letters.

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

I. Ivanov, R. Yakimova, G. Yazdi, 2005 .

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

J. Zúñiga-Pérez, L. R. Bailey, F. Semond, 2008 .

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Y. Cordier, D. Planson, C. Sonneville, 2022, AIP Advances.

Experimental observation of strong light-matter coupling in ZnO microcavities : Influence of large excitonic absorption

J. Leymarie, A. Vasson, M. Leroux, 2008, 0812.3383.

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

T. Bretagnon, B. Gil, J. Leymarie, 2009, 0905.4351.

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Portail, Y. Cordier, M. Bah, 2022, Materials Science Forum.

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Y. Cordier, A. Soltani, A. Jaouad, 2021, Semiconductor Science and Technology.

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2020 .

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

J. Massies, S. Joblot, Y. Cordier, 2008 .

Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

M. Shur, J. Massies, W. Knap, 2000 .

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

M. Khoury, Y. Cordier, J. De Jaeger, 2018 .

Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers

M. Sadowski, W. Knap, A. Witowski, 2000 .

AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate

Y. Cordier, S. Chenot, B. Damilano, 2018 .

Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

M. Sadowski, W. Knap, N. Grandjean, 2003 .

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

B. Corbett, J. Chauveau, Y. Cordier, 2012 .

A detailed study of AlN and GaN grown on silicon‐on‐porous silicon substrate

M. Portail, Y. Cordier, G. Gautier, 2017 .

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, S. Chenot, B. Damilano, 2008, IEEE Electron Device Letters.

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

J. Massies, Y. Cordier, M. Hugues, 2006 .

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

J. Chauveau, Y. Cordier, S. Chenot, 2010 .

Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

M. Shur, M. Sadowski, M. Khan, 1999 .

Characterization of differently grown GaN epilayers by time‐resolved four‐wave mixing technique

K. Jarašiūnas, É. Frayssinet, T. Malinauskas, 2005 .

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

P. Lefebvre, P. Valvin, B. Pécz, 2002 .

Analysis of low-threshold optically pumped III-nitride microdisk lasers

S. Chenot, B. Damilano, V. Brändli, 2020, 2009.05118.

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

P. Vennégués, M. Leroux, É. Frayssinet, 2007 .

Producing a semiconductor substrate a base of nitrides of elements iii

J. Massies, F. Semond, É. Frayssinet, 2015 .

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

W. Knap, M. Leszczynski, É. Frayssinet, 1999 .

Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

R. Mertens, C. Hoof, J. John, 2011 .

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2021, Solid-State Electronics.

Molecular Beam Epitaxy of AlN Layers on Si (111)

J. Massies, F. Semond, É. Frayssinet, 2008 .

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

T. Chassagne, M. Portail, Y. Cordier, 2014 .

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1 x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennégués, R. Martin, É. Frayssinet, 2012 .

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

M. Shur, W. Knap, N. Grandjean, 2002 .

Infrared studies on GaN single crystals and homoepitaxial layers

W. Knap, M. Leszczynski, É. Frayssinet, 2000 .

DOPING OF HOMOEPITAXIAL GAN LAYERS

M. Boćkowski, W. Knap, M. Leszczynski, 1998 .

Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L. F. Lastras-Martínez, Y. Cordier, R. Balderas-Navarro, 2012 .

Comparison of lasing characteristics of GaN microdisks with different structures

Hoi Wai Choi, B. Damilano, F. Semond, 2022, Journal of Physics D: Applied Physics.

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Daniel Rondi, Eric Frayssinet, Yvon Cordier, 2011 .

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

B. Damilano, P. Vennégués, F. Semond, 2013 .

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

J. Brault, Y. Cordier, S. Chenot, 2018, IEEE Photonics Technology Letters.

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Y. Cordier, D. Valente, M. Bah, 2020, Scientific Reports.

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Micro and Nanostructures.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Microelectron. J..

Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Y. Cordier, S. Chenot, B. Damilano, 2020 .

Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

F. Julien, Y. Cordier, M. Tchernycheva, 2019, Applied Physics Letters.

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

M. Stutzmann, M. Benyoucef, A. Sarua, 2003 .

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Pierre Gibart, Bernard Beaumont, E. Muñoz, 2004 .

Interfacial properties of AlN and oxidized AlN on Si

P. Godignon, M. Placidi, N. Mestres, 2010 .

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Y. Cordier, D. Planson, C. Sonneville, 2023, Crystals.

Whispering-gallery mode InGaN microdisks on GaN substrates.

B. Damilano, F. Semond, É. Frayssinet, 2021, Optics express.

Proposition of a model elucidating the AlN-on-Si (111) microstructure

L. Largeau, P. Vennégués, G. Feuillet, 2018, Journal of Applied Physics.

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Y. Cordier, B. Damilano, F. Semond, 2018 .

A combined growth process for state‐of‐the‐art GaN on silicon

Y. Cordier, F. Semond, É. Frayssinet, 2017 .

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

M. Kennard, É. Frayssinet, F. Cayrel, 2012 .

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

M. Portail, B. Damilano, V. Brändli, 2020, Scientific Reports.

III-nitride on silicon electrically injected microrings for nanophotonic circuits.

B. Damilano, B. Gayral, F. Semond, 2019, Optics express.

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Y. Cordier, C. Bongiorno, F. Giannazzo, 2023, Microelectronic Engineering.

AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, S. Chenot, B. Damilano, 2009 .

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Y. Cordier, C. Gaquière, S. Chenot, 2017 .

GaN Schottky diodes for proton beam monitoring

J. Herault, S. Chenot, M. Hugues, 2018, Biomedical Physics & Engineering Express.

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Y. Cordier, J. Mateos, T. González, 2022, Journal of Applied Physics.

Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

Eric Frayssinet, Yvon Cordier, Y. Cordier, 2011 .

Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate

J. Brault, Y. Cordier, S. Chenot, 2015 .

Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2011, 1105.0747.

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

M. Portail, Y. Cordier, F. Vaurette, 2023, Microelectronic Engineering.

2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Y. Cordier, J. Tartarin, J. De Jaeger, 2019, Semiconductor Science and Technology.

Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

J. Zúñiga-Pérez, J. Leymarie, M. Leroux, 2010 .

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

T. Bretagnon, B. Gil, J. Leymarie, 2009, 0905.4351.

Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures

M. Shur, G. Simin, M. Khan, 2004 .

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

B. Damilano, B. Gayral, F. Semond, 2019, Scientific Reports.

Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate

Y. Cordier, S. Chenot, B. Damilano, 2013 .

High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction

M. Shur, M. Goiran, M. Sadowski, 2001 .

Transmission electron microscopy of GaN layers grown by ELO and micro – ELO techniques

B. Pécz, É. Frayssinet, B. Beaumont, 2005 .

Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

N. Idir, Y. Cordier, J. De Jaeger, 2023, Journal of Vacuum Science & Technology B.

Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

B. Corbett, É. Frayssinet, P. Mierry, 2011 .

Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals

Wojciech Knap, P. Wisniewski, Piotr Perlin, 2001 .

X-ray detectors based on GaN Schottky diodes

S. Chenot, M. Idir, J. Reverchon, 2010 .

X-ray detectors based on GaN

Jean-Luc Reverchon, Jean-Yves Duboz, Eric Frayssinet, 2013, Photonics West - Optoelectronic Materials and Devices.

III-nitride on silicon electrically injected microrings for nanophotonic circuits.

B. Damilano, B. Gayral, F. Semond, 2019, Optics express.

Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers

W. Knap, É. Frayssinet, P. Prystawko, 1999 .

Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

D. Planson, R. Sommet, C. Sonneville, 2024, Semiconductor Science and Technology.

Characteristics of Exciton-polaritons in Zno- Based Hybrid Microcavities

H. Morkoç, P. Lagoudakis, F. Laussy, 2022 .