P. Prystawko

发表

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

M. Leszczynski, F. Giannazzo, G. Greco, 2019, Materials Science in Semiconductor Processing.

GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

W. Knap, S. Rumyantsev, M. Sakowicz, 2020, Materials.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

R. Kucharski, P. Prystawko, E. Kamińska, 2018, Micromachines.

Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices

R. Czernecki, M. Leszczynski, P. Prystawko, 2007 .

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

C. Gaquiere, Wojciech Knap, Sylvain Delage, 2010 .

Epitaxy on GaN bulk crystals

R. Czernecki, P. Prystawko, M. Leszczynski, 2001, International Conference on Solid State Crystals.

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Investigation of n-type gallium nitride grating for applications in coherent thermal sources

I. Kašalynas, P. Prystawko, J. Kacperski, 2020 .

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

I. Kašalynas, R. Kucharski, J. Plesiewicz, 2014 .

MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

K. Ebeling, F. Eberhard, P. Prystawko, 2000 .

Low dislocation density, high power InGaN laser diodes

M. Boćkowski, J. Weyher, P. Perlin, 2004 .

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

K. Ebeling, K. Thonke, R. Sauer, 1999 .

Dry etching of GaN substrates for high-quality homoepitaxy

K. Ebeling, F. Eberhard, M. Leszczynski, 1999 .

Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate

M. Boćkowski, J. Jasinski, M. Leszczynski, 2019, Materials Science in Semiconductor Processing.

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

P. Perlin, J. Plesiewicz, E. Grzanka, 2015 .

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

E. Polychroniadis, M. Leszczynski, P. Prystawko, 2017 .

Carrier trapping in the terahertz bow-tie diode based on AlGaN/GaN-heterostructures

I. Kašalynas, A. Lisauskas, P. Prystawko, 2018, 2018 22nd International Microwave and Radar Conference (MIKON).

AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

W. Knap, S. Rumyantsev, M. Sakowicz, 2019, Semiconductor Science and Technology.

Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing

C. Bongiorno, G. Greco, R. Lo Nigro, 2012 .

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

F. Giannazzo, G. Greco, R. Lo Nigro, 2012 .

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

M. Leszczynski, G. Greco, F. Roccaforte, 2011 .

Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

M. Shur, J. Massies, W. Knap, 2000 .

Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers

M. Sadowski, W. Knap, A. Witowski, 2000 .

Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

T. Altantzis, G. van Tendeloo, E. Polychroniadis, 2019, Materials Science in Semiconductor Processing.

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

I. Grigelionis, I. Kašalynas, P. Prystawko, 2018 .

Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

M. Sadowski, W. Knap, N. Grandjean, 2003 .

Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN

A. Zukauskas, K. Kazlauskas, G. Tamulaitis, 2004 .

Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN

S. Juršėnas, A. Žukauskas, P. Perlin, 2001 .

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

J. Misiewicz, R. Kudrawiec, M. Gładysiewicz, 2012 .

Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers

M. Godlewski, P. Perlin, R. Czernecki, 2002 .

Novel approach of top-down GaN nanorods fabrication

P. Prystawko, E. Kamińska, A. Piotrowska, 2015, 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).

Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates

M. Leszczynski, P. Prystawko, M. Sarzyński, 2017 .

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

W. Knap, S. Rumyantsev, M. Sakowicz, 2021, Micromachines.

Low frequency noise and trap density in GaN/AlGaN field effect transistors

I. Kašalynas, S. Rumyantsev, M. Sakowicz, 2019, Applied Physics Letters.

Comparative analysis of sub-THz detection in graphene, GaN HEMT, and FinFET devices

J. A. Delgado Notario, S. Rumyantsev, P. Prystawko, 2022, 2022 24th International Microwave and Radar Conference (MIKON).

Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics.

S. Rumyantsev, M. Sakowicz, A. Krajewska, 2022, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).

Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire

A. Turos, M. Leszczynski, J. Domagala, 1999 .

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

W. Knap, M. Leszczynski, É. Frayssinet, 1999 .

Hierarchically porous GaN thin films fabricated using high fluence Ar ion implantation of epitaxial GaN on sapphire

P. Prystawko, W. Zaleszczyk, M. Juchniewicz, 2022, Thin Solid Films.

Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature

I. Grigelionis, I. Kašalynas, G. Valušis, 2017 .

THz emission from grating-coupled AlGaN/GaN heterostructures: Comparison between plasmonic and thermal emission

I. Kašalynas, R. Venckevicius, G. Valušis, 2015, 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

I. Kašalynas, P. Prystawko, R. Aleksieju̅nas, 2022, Materials.

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Z. Fogarassy, B. Pécz, M. Leszczynski, 2021, Nanomaterials.

Optical Performance of Two Dimensional Electron Gas and GaN:С Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

M. D. Moldavskaya, V. Shalygin, I. Kašalynas, 2021, Applied Sciences.

Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings.

I. Grigelionis, I. Kašalynas, P. Prystawko, 2021, Optics express.

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

M. Shur, W. Knap, N. Grandjean, 2002 .

Graphene/AlGaN/GaN RF Switch

W. Knap, S. Rumyantsev, A. Krajewska, 2021, Micromachines.

Electrically-controlled THz emission from AlGaN/GaN/Al2O3 high electron mobility transistor structures at a temperature of 20 K

I. Grigelionis, I. Kašalynas, P. Prystawko, 2019, 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection

L. Minkevičius, I. Kašalynas, P. Prystawko, 2018, Lithuanian Journal of Physics.

Development of the terahertz bow-tie diodes of AlGaN/GaN-heterostructures with high mobility 2DEG

L. Minkevičius, I. Kašalynas, R. Venckevicius, 2017, 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Nonlinear spectroscopy of homoepitaxial GaN

K. Reimann, M. Leszczynski, P. Prystawko, 2001 .

Infrared studies on GaN single crystals and homoepitaxial layers

W. Knap, M. Leszczynski, É. Frayssinet, 2000 .

DOPING OF HOMOEPITAXIAL GAN LAYERS

M. Boćkowski, W. Knap, M. Leszczynski, 1998 .

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

I. Kašalynas, P. Prystawko, R. Balagula, 2022, Materials.

Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field

I. Grigelionis, I. Kašalynas, W. Knap, 2020 .

Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature

I. Grigelionis, I. Kašalynas, P. Prystawko, 2019, Materials Science in Semiconductor Processing.

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

J. A. Delgado-Notario, S. Rumyantsev, P. Prystawko, 2022, Applied Physics Letters.

III-N ternary epi-layers grown on the GaN bulk crystals

P. Perlin, R. Czernecki, P. Prystawko, 2001 .

Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications

Y. Cordier, F. Giannazzo, E. Schilirò, 2020 .

AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime

W. Knap, P. Prystawko, P. Sai, 2021, OPTO.

Sub-terahertz detection by fin-shaped GaN/AlGaN transistors

P. Prystawko, G. Cywinski, W. Knap, 2020, OPTO.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

G. Simin, W. Knap, S. Rumyantsev, 2018 .

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

T. Otsuji, W. Knap, N. Dyakonova, 2009 .

Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation

P. Prystawko, G. Cywinski, W. Knap, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors

W. Knap, S. Rumyantsev, P. Prystawko, 2018, International Conference on Infrared, Millimeter, and Terahertz Waves.

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

P. Wisniewski, Lucja Marona, Piotr Perlin, 2006 .

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

I. Kašalynas, W. Knap, S. Rumyantsev, 2020, Micromachines.

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Francois H. Julien, Maria Tchernycheva, Marcin Siekacz, 2006 .

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Sandor Kokenyesi, R. Bohdan, Witold Trzeciakowski, 2005 .

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Piotr Perlin, Grzegorz Targowski, Robert Czernecki, 2011 .

Space-charge domains in n-type GaN epilayers under pulsed electric field

I. Kašalynas, P. Prystawko, M. Leszczyński, 2022, Applied Physics Letters.

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

W. Knap, J. Łusakowski, S. Rumyantsev, 2021, Physical Review B.

AlGaN HEMTs on patterned resistive/conductive SiC templates

M. Leszczynski, P. Prystawko, M. Sarzyński, 2017 .

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

M. Boćkowski, P. Prystawko, I. Grzegory, 2022, IEEE Transactions on Electron Devices.

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

A. Michon, Y. Cordier, C. Bongiorno, 2019, Materials Science in Semiconductor Processing.

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Petr G. Eliseev, P. Perlin, Lucja Marona, 2006 .

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

R. Kucharski, P. Prystawko, E. Kamińska, 2015 .

LASER DIODES GROWN ON BULK GALLIUM NITRIDE SUBSTRATES

M. Boćkowski, P. Perlin, M. Leszczynski, 2008 .

Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

M. Godlewski, E. Goldys, P. Perlin, 2003 .

Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates

I. Kašalynas, P. Prystawko, V. Janonis, 2018 .

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

C. Bongiorno, E. Grzanka, F. Giannazzo, 2015 .

Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures

M. Shur, G. Simin, M. Khan, 2004 .

AlGaN/GaN HEMTs for THz Plasma Wave Detection and Emission

I. Kašalynas, W. Knap, S. Rumyantsev, 2020, International Conference on Infrared, Millimeter, and Terahertz Waves.

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski, E. Goldys, P. Prystawko, 2004 .

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

P. Adamiec, F. Dybala, Artem Bercha, 2004 .

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

P. Borowicz, P. Prystawko, E. Kamińska, 2014 .

Localization effects in GaN/AlGaN quantum well - Photoluminescence studies

J. Massies, W. Knap, N. Grandjean, 2003 .

Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE

V. Markevich, A. Peaker, J. Plesiewicz, 2023, Microelectronic Engineering.

short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN

M. Boćkowski, J. Weyher, P. Perlin, 2001 .

X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates

P. Prystawko, Z. Zytkiewicz, B. Beaumont, 2002 .

Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates

P. Prystawko, A. Barski, T. Suski, 1999 .

(Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates

M. Ekielski, Wojciech Wojtasiak, Wojciech Gwarek, 2016 .

In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers

M. Godlewski, E. Goldys, B. Monemar, 2001 .

Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski, M. Boćkowski, E. Goldys, 2002 .

Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

J. Muszalski, P. Perlin, R. Czernecki, 2004 .

Low resistance as-deposited Cr∕Au contacts on p-type GaN

G. Konstantinidis, N. Pelekanos, M. Leszczynski, 2007 .

Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

E. Polychroniadis, J. Plesiewicz, M. Leszczynski, 2014 .

High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy

Z. Wasilewski, P. Perlin, P. Prystawko, 2005 .

Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure

P. Prystawko, T. Suski, H. Teisseyre, 1999 .

Optical gain in homoepitaxial GaN

S. Juršėnas, A. Žukauskas, P. Perlin, 2004 .

Epitaxy of ternary nitrides on GaN single crystals

M. Boćkowski, M. Leszczynski, P. Prystawko, 1999 .

Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN

A. Zukauskas, K. Kazlauskas, G. Tamulaitis, 2003 .

Stimulated Emission and Optical Gain in Homoepitaxial GaN

A. Žukauskas, K. Kazlauskas, P. Perlin, 2002 .

Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

W. Knap, P. Perlin, P. Prystawko, 2015, IEEE Sensors Journal.

THz spectroscopy of the ammonothermal p-type GaN substrate with and without AlGaN/GaN epilayers

I. Kašalynas, A. Krotkus, R. Adomavičius, 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers

W. Knap, É. Frayssinet, P. Prystawko, 1999 .

High-power laser structures grown on bulk GaN crystals

Piotr Perlin, Grzegorz Targowski, Izabella Grzegory, 2004 .

Investigation of Electron Effective Mass in AlGaN/GaN Heterostructures by THz Spectroscopy of Drude Conductivity

V. Korotyeyev, I. Kašalynas, P. Prystawko, 2022, IEEE Transactions on Electron Devices.

Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers

K. Korona, J. Kuhl, P. Perlin, 2002 .