M. Qi

发表

Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter.

M. Dresselhaus, J. Kong, D. Jena, 2017, Nano letters.

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

A. Seabaugh, J. Kuo, H. Xing, 2012, 2012 International Electron Devices Meeting.

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

D. Jena, H. Xing, P. Fay, 2015 .

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

D. Jena, H. Xing, Pei Zhao, 2016, 1611.08914.

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Yu Cao, D. Jena, H. Xing, 2016, IEEE Electron Device Letters.

Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects

H. Xing, V. Protasenko, M. Wistey, 2013, 1311.1448.

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

D. Jena, H. Xing, P. Fay, 2015, 2015 73rd Annual Device Research Conference (DRC).

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

D. Jena, H. Xing, V. Protasenko, 2015, 1502.00072.

Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides

H. Xing, V. Protasenko, M. Wistey, 2017 .

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Huili Grace Xing, Kazuki Nomoto, T. Mishima, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits

D. Jena, H. Xing, M. Qi, 2015, 2015 73rd Annual Device Research Conference (DRC).

Analysis and design of core-shell upconverting nanostructures

Joseph L. Loof, M. Wistey, M. Qi, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

D. Jena, H. Xing, P. Fay, 2016, Device Research Conference.

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2015 .

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2017, IEEE Electron Device Letters.

Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

H. Xing, J. Millunchick, V. Protasenko, 2014, Journal of Electronic Materials.

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.