I. Antonova

发表

Vertical heterostructures based on graphene and other 2D materials

I. Antonova, 2016 .

Origin of hole and electron traps in graphene oxide

I. Antonova, I. A. Kotin, O. Orlov, 2016 .

2D printed graphene conductive layers with high carrier mobility

I. Antonova, I. A. Kotin, E. Yakimchuk, 2017 .

2D printing technologies using graphene-based materials

I. Antonova, 2017 .

Fluorinated graphene suspension for inkjet printed technologies

I. Antonova, S. Smagulova, V. Prinz, 2016, Nanotechnology.

Graphene Antenna on a Biodegradable Substrate for Frequency Range of Cellular Operators

I. Antonova, I. A. Kotin, E. Yakimchuk, 2018, 2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE).

Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

I. Antonova, V. Prinz, N. Nebogatikova, 2014 .

Enhanced formation of Ge nanocrystals in Ge : SiO 2 layers by swift heavy ions

I. Balberg, V. Volodin, I. Antonova, 2012 .

Colloidal solutions of niobium trisulfide and niobium triselenide

E. Grayfer, S. Artemkina, V. Fedorov, 2014 .

Graphene-N-methylpyrrolidone based hybrid material: Tunable structural and electrical properties

V. Volodin, I. Antonova, I. A. Kotin, 2011, 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.

Electrical properties of nanocomposite graphene-organic monolayers

I. Antonova, I. A. Kotin, V. Prinz, 2010, 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.

Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment

D. V. Kilanov, E. P. Neustroev, V. Popov, 1999 .

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

I. Balberg, V. Volodin, A. Cherkov, 2009, Nanotechnology.

Deep-level spectroscopy studies of confinement levels in SiGe quantum wells

E. P. Neustroev, S. Ray, J. Kolodzey, 2009 .

Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

K. Kokh, O. Tereshchenko, V. Volodin, 2021, Journal of Materials Science.

Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs

V. Popov, I. Antonova, O. Naumova, 2005 .

DLTS study of silicon-on-insulator structures irradiated with electrons or high-energy ions

V. Popov, I. Antonova, V. Skuratov, 2004, IEEE Transactions on Nuclear Science.

Conductance oscillations near bonded interface in the ultra thin silicon-on-insulator layers at room temperature

V. Popov, I. Antonova, O. Naumova, 2003 .

Modification of silicon-on-insulator structures under nano-scale device fabrication

V. Popov, I. Antonova, T. Gavrilova, 2003 .

Characterization of Silicon-on-Insulator Structures by High-Resolution X-Ray Diffraction

V. Popov, J. Domagala, I. Antonova, 2002 .

Traps at the bonded interface in silicon-on-insulator structures

D. V. Nikolaev, V. Popov, I. Antonova, 2001 .

Deep levels in SOI-structures investigated by charge and capacitance DLTS

D. V. Nikolaev, V. Popov, I. Antonova, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by Smart-Cut Technology

L. V. Mironova, E. P. Neustroev, V. Popov, 2000 .

Donor center formation in hydrogen implanted silicon

E. P. Neustroev, V. Popov, I. Antonova, 1999 .

Mildly oxidized graphene oxide suspension for printing technologies

I. Antonova, I. A. Kotin, S. Smagulova, 2018, Materials Research Express.

Graphene suspensions for 2D printing

I. Antonova, I. A. Kotin, E. Yakimchuk, 2016 .

Graphene/Fluorinated Graphene Systems for a Wide Spectrum ofElectronics Application

I. Antonova, I. A. Kotin, E. Yakimchuk, 2017, 2205.07602.

Si Nanocrystal Arrays Created in SiO2 Matrix by High-Energy Ion Bombardment

I. Antonova, 2012 .

Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics

I. Antonova, R. Soots, N. Nebogatikova, 2022, Nanomaterials.

Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation

V. Popov, I. Antonova, O. Naumova, 2003 .

Swift heavy-ion irradiation of graphene oxide: Localized reduction and formation of sp-hybridized carbon chains

I. Antonova, A. Frolov, N. Nebogatikova, 2019, Carbon.

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources

V. I. Aksenova, I. Balberg, V. R. Galakhov, 2010 .

Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition

V. Volodin, I. Antonova, D. Marin, 2006 .

Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

I. Antonova, D. Marin, J. Jedrzejewski, 2006, 2006 Multiconference on Electronics and Photonics.

Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

I. Antonova, J. Jedrzejewski, Z. Yanovitskaya, 2006, 2006 Multiconference on Electronics and Photonics.

Comparison of Electrical Properties of Silicon-on-Insulator Structures Fabricated with Use of Hydrogen Slicing and BESOI

D. V. Nikolaev, V. Popov, I. Antonova, 2004 .

Optical and electronic properties of the partially fluorinated graphene suspensions and films

I. Antonova, E. Obraztsova, N. Nebogatikova, 2017, Journal of Materials Science.

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

I. Antonova, I. A. Kotin, S. Smagulova, 2019, Nanotechnology.

Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis

I. Antonova, R. Soots, M. Shavelkina, 2020, Nanomaterials.

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

I. Balberg, A. Cherkov, I. Antonova, 2009, Nanotechnology.

Charge storage, photoluminescence, and cluster statistics in ensembles of Si quantum dots

I. Balberg, I. Antonova, E. Savir, 2008 .

Recognition of Spatial Distribution of CNT and Graphene in Hybrid Structure by Mapping with Coherent Anti-Stokes Raman Microscopy

I. Antonova, G. Dovbeshko, A. Paddubskaya, 2020, Nanoscale research letters.

Heterostructures formed on silicon by high-dose multi-energy hydrogen implantation

V. Popov, I. Antonova, O. Naumova, 2003 .

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

I. Antonova, V. Seleznev, V. Prints, 2007 .

Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure

I. Antonova, C. A. Londos, A. Misiuk, 2006 .

Traps with near-midgap energies at the bonded Si/SiO2 interface in silicon-on-insulator structures

V. Popov, I. Antonova, A. Rukovishnikov, 2004 .

Electrical Properties of Textiles Treated with Graphene Oxide Suspension

D. V. Nikolaev, I. Antonova, S. Smagulova, 2021, Materials.

Modulation of current in self-forming lateral graphene-based heterostructures

I. Antonova, I. A. Kotin, V. Prinz, 2015 .

Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

A. Nenashev, K. Kokh, O. Tereshchenko, 2022, Physica E: Low-dimensional Systems and Nanostructures.

Benefits of Printed Graphene with Variable Resistance for Flexible and Ecological 5G Band Antennas

I. Antonova, A. Cherevko, A. Ivanov, 2022, Materials.

Comparison of flash-memory elements using materials based on graphene

I. Antonova, I. A. Kotin, O. Orlov, 2017 .

Screen-Printed Structures from a Highly Conductive Mildly Oxidized Graphene Suspension for Flexible Electronics

I. Antonova, S. Smagulova, V. Popov, 2022, Materials.

Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

A. Romano-Rodríguez, V. Popov, I. Antonova, 2001 .

Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate

M. A. Sergeev, V. Volodin, I. Antonova, 2014 .

Chemical vapor deposition growth of graphene on copper substrates: current trends

I. Antonova, Irina Veniaminovna Antonova, 2013 .

Bi2Se3 Nanolayer Growth on 2D Printed Graphene

K. Kokh, O. Tereshchenko, I. Antonova, 2022, Crystal Growth & Design.

Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation

S. Ray, J. Kolodzey, I. Antonova, 2011 .

J. Kolodzey, I. Antonova, M. Kagan, 2005 .

Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si

S. V. Ovsyannikov, V. V. Shchennikov, I. Antonova, 2007 .

Micro-characterisation of Si wafers by high-pressure thermopower technique

S. V. Ovsyannikov, V. V. Shchennikov, Deren Yang, 2006 .

Thermoelectric properties of hydrogen ion-irradiated silicon crystals under ultrahigh pressures of up to 20 GPa

S. V. Ovsyannikov, V. V. Shchennikov, S. N. Shamin, 2006 .

Nanostructuring few-layer graphene films with swift heavy ions for electronic application: tuning of electronic and transport properties.

A. Krasheninnikov, L. Chernozatonskii, P. Sorokin, 2018, Nanoscale.

Producing arrays of graphene and few-layer graphene quantum dots in a fluorographene matrix

I. Antonova, V. Prinz, N. Nebogatikova, 2014 .

Mechanism of resistive switching in films based on partially fluorinated graphene

I. Antonova, N. Nebogatikova, I. Kurkina, 2017 .

Flexibility of Fluorinated Graphene-Based Materials

I. Antonova, N. Nebogatikova, I. Kurkina, 2020, Materials.

DLTS study of nucleation stage of oxygen precipitate in silicon

V. Popov, I. Antonova, S. Shaimeev, 1998 .

Formation of oxygen precipitates in silicon

V. Popov, I. Antonova, A. Misiuk, 1997 .

Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment

A. Dvurechenskii, I. Antonova, H. Klose, 1995 .

Fluorinated graphene nanoparticles with 1–3 nm electrically active graphene quantum dots

L. Chernozatonskii, I. Antonova, D. Kvashnin, 2020, Nanotechnology.

Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells

P. Zaumseil, I. Antonova, A. Misiuk, 2006 .

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

I. Antonova, S. Smagulova, S. Shaimeev, 2006 .

Ftir Spectroscopy and Spectroscopic Ellipsometry Study of Nanocrystalline Layers Formed by High-Dose Hydrogen and Deuterium Implantation of Silicon

L. N. Safronov, V. Popov, I. Antonova, 2000 .

Study of the Properties of Two-Dimensional MoS2 and WS2 Films Synthesized by Chemical-Vapor Deposition

I. Antonova, S. Smagulova, E. Obraztsova, 2020, Semiconductors.

E. N. Vandyshev, M. Kaniewska, I. Antonova, 2003 .

Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Andrzej Misiuk, Irina V. Antonova, D. V. Kilanov, 2000 .

Thin partially reduced oxide-graphene films: structural, optical, and electrical properties

I. Antonova, S. Smagulova, I. Kurkina, 2014, Nanotechnologies in Russia.

Silicon-on-insulator nanotransistors: Prospects and problems of fabrication

V. Popov, I. Antonova, T. Gavrilova, 2003 .

Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography

V. Popov, I. Antonova, T. Gavrilova, 2002 .

Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

L. V. Mironova, V. Popov, I. Antonova, 2000 .

Thermal donor formation in crystalline silicon irradiated by high energy ions

E. P. Neustroev, V. Popov, I. Antonova, 2000 .

Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C

V. Popov, I. Antonova, V. Skuratov, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Graphene/Hexagonal Boron Nitride Composite Nanoparticles for 2D Printing Technologies

V. Volodin, I. Antonova, R. Soots, 2021, Advanced Engineering Materials.

Two-layer and composite films based on oxidized and fluorinated graphene.

I. Antonova, I. A. Kotin, N. Nebogatikova, 2017, Physical chemistry chemical physics : PCCP.

Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties.

I. Antonova, S. Smagulova, V. Prinz, 2015, Physical chemistry chemical physics : PCCP.

Plasmon-Enhanced Raman Scattering by Multilayered Graphene at the Micro- and Nanoscale: SERS and TERS Analysis

A. Milekhin, I. Antonova, N. Nebogatikova, 2023, The Journal of Physical Chemistry C.

Graphene-based humidity sensors: the origin of alternating resistance change

D. V. Nikolaev, I. Antonova, S. Smagulova, 2017, Nanotechnology.

Graphene-PEDOT: PSS Humidity Sensors for High Sensitive, Low-Cost, Highly-Reliable, Flexible, and Printed Electronics

I. Antonova, I. A. Kotin, S. Smagulova, 2019, Materials.

Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

B. Surma, I. Antonova, A. Misiuk, 2005 .

Fluorinated graphene suspension for flexible and printed electronics: Flakes, 2D films, and heterostructures

I. Antonova, I. A. Kotin, S. Smagulova, 2019, Materials & Design.

Flexible, Eco-Friendly Graphene Resistive Dipole for G5 Standard with J Shaped Balancing System

I. Antonova, A. Cherevko, R. A. Soots, 2022, 2022 International Conference on Information, Control, and Communication Technologies (ICCT).

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

I. Antonova, N. Nebogatikova, A. Olejniczak, 2022, Materials.

Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

P. Sorokin, V. Volodin, I. Antonova, 2023, Materials.

DLTS study of oxygen precipitates in silicon annealed at high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

I. Antonova, I. A. Kotin, R. Soots, 2019, Advanced Electronic Materials.

Charge deep-level transient spectroscopy of SiO2 and Al2O3 layers with embedded Ge nanocrystals

I. Balberg, I. Antonova, S. Smagulova, 2013 .

Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica

K. Kokh, O. Tereshchenko, I. Antonova, 2020 .

Energetic Ion Irradiation as Advanced Process for Functionalization of Silicon Nanocrystals in a SiO2 Matrix

I. Balberg, I. Antonova, V. Skuratov, 2012 .

Charge spectroscopy of SiO2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions

I. Balberg, I. Antonova, S. Smagulova, 2011 .

Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties

I. Antonova, J. Jedrzejewski, V. Skuratov, 2010 .

Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation

I. Antonova, D. Marin, J. Jedrzejewski, 2007 .

Chemical Functionalization as an Approach for the Creation of Arrays of Graphene Quantum Dots Embedded in Dielectric Matrix

I. Antonova, V. Prinz, N. Nebogatikova, 2015 .

Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium-doped Czochralski-grown silicon

Deren Yang, I. Antonova, W. Jung, 2005 .

Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons

V. Popov, I. Antonova, V. Skuratov, 2005 .

Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon

I. Antonova, S. Smagulova, A. Misiuk, 2005 .

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

I. Antonova, C. A. Londos, E. Sgourou, 2007 .

Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

V. Emtsev, I. Antonova, C. A. Londos, 2005 .

Nucleation and formation of oxygen precipitates in Czochralski grown silicon annealed under uniform stress conditions

B. Surma, V. Popov, I. Antonova, 1998 .

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

E. P. Neustroev, A. Romano-Rodríguez, I. Antonova, 2001 .

Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400-700 °C

L. N. Safronov, I. Antonova, S. Smagulova, 2003 .

Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions

I. Antonova, C. A. Londos, A. Misiuk, 2002 .

Modification of the bonded interface in silicon-on-insulator structures under thermal treatment in hydrogen ambient

V. Popov, I. Antonova, V. Skuratov, 2003 .

Pressure-induced formation of electrically active centres in irradiated silicon: comparison of electron and neutron irradiation

I. Antonova, S. Smagulova, W. Jung, 2005 .

Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Jadwiga Bak-Misiuk, Andrzej Misiuk, Irina V. Antonova, 2001, International Conference on Solid State Crystals.

Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation

I. V. Antonova, V. I. Obodnikov, A. K. Gutakovskii, 2000 .

A DLTS study of the evolution of oxygen precipitates in Si at high temperature and high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

I. Antonova, J. Ratajczak, A. Misiuk, 2004 .

Effect of Stress on Accumulation of Hydrogen and Microstructure of Silcon co-Implanted with Hydrogen and Helium

B. Surma, J. Jagielski, I. Antonova, 2004 .

Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

V. Popov, I. Antonova, J. Ratajczak, 2003 .

Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

I. Antonova, V. Raineri, W. Wierzchowski, 2001 .

Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

A. Romano-Rodríguez, B. Surma, I. Tyschenko, 1999 .

Thermal acceptors in irradiated silicon

E. P. Neustroev, V. Popov, I. Antonova, 2000 .

Thermal Donor and Oxygen Precipitate Formation in Silicon during 450°C Treatments under Atmospheric and Enhanced Pressure

V. Popov, I. Antonova, A. Misiuk, 1999 .

Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

L. N. Safronov, E. P. Neustroev, I. Antonova, 2004 .

Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix

Irina V. Antonova, Vladimir A. Volodin, S. A. Smagulova, 2009 .

Charge fluctuations at the bonding interface in the silicon-on-insulator structures

D. V. Nikolaev, V. Popov, I. Antonova, 2003 .

Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

I. Antonova, J. Bąk-Misiuk, V. Popov, 2001 .

Porous‐like structures prepared by temperature‐pressure treatment of heavily hydrogenated silicon

B. Surma, I. Antonova, A. Misiuk, 2005 .

Synchrotron topographic and photoluminescence investigations of porous layer in HT‐HP treated silicon implanted with deuterium ions

B. Surma, W. Graeff, I. Antonova, 2005 .

Electrical characteristics of SOI-like structures formed in nitrogen or oxygen implanted silicon treated under high pressure

I. Antonova, C. A. Londos, A. Misiuk, 2005 .

Effect of high temperature - pressure on SOI structure

I. Antonova, J. Ratajczak, A. Misiuk, 2002 .

Dependence of photoluminescence of silicon on conditions of pressure-annealing

A. Romano-Rodríguez, I. Antonova, J. Jun, 1999 .

High carrier mobility in quasi-suspended few-layer graphene on printed graphene oxide layers

I. Antonova, I. A. Kotin, E. V. Basyleva, 2017, Journal of Materials Science.

Films fabricated from partially fluorinated graphene suspension: structural, electronic properties and negative differential resistance

I. Antonova, S. Smagulova, N. Nebogatikova, 2017, Nanotechnology.

Non-Organic Dielectric Layers for Graphene and Flexible Electronics

I. Antonova, 2016 .

Fluorinated graphene films with graphene quantum dots for electronic applications

Irina V. Antonova, I. Antonova, N. Nebogatikova, 2016, 2205.00205.

Extremely high response of electrostatically exfoliated few layer graphene to ammonia adsorption

V. Volodin, I. Antonova, V. Seleznev, 2011, Nanotechnology.

New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties.

V. Volodin, I. Antonova, E. Yakimchuk, 2019, Physical chemistry chemical physics : PCCP.

Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

I. Antonova, M. Ichikawa, S. Smagulova, 2012 .

Modification of the SOI-like structures by annealing under high hydrostatic pressure

B. Surma, J. Härtwig, I. Antonova, 2004 .

Infrared and photoluminescence studies on silicon oxide formation in oxygen-implanted silicon annealed under enhanced pressure

B. Surma, I. Antonova, G. Gawlik, 2001 .

Nanostructuring of CVD graphene by high-energy heavy ions

P. Sorokin, V. Volodin, I. Antonova, 2022, Diamond and Related Materials.

Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene

K. Kokh, O. Tereshchenko, I. Antonova, 2019, Nanotechnology.

Fluorinated Graphene Dielectric and Functional Layers for Electronic Applications

I. Antonova, N. Nebogatikova, 2017 .

Light-assisted recharging of graphene quantum dots in fluorographene matrix

I. Antonova, S. Smagulova, V. Prinz, 2014 .

Graphene quantum dots in fluorographene matrix formed by means of chemical functionalization

I. Antonova, S. Smagulova, V. Prinz, 2014 .

Resistive switching effect and traps in partially fluorinated graphene films

I. Antonova, S. Smagulova, N. Nebogatikova, 2016 .

Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers

I. Antonova, V. Prinz, V. Seleznev, 2007 .

Capacitance study of selectively doped SiGe/Si heterostructures

S. Ray, J. Kolodzey, R. Troeger, 2005 .

Deep levels and electron transport in AlGaN/GaN heterostructures

I. Antonova, K. Zhuravlev, V. Mansurov, 2008 .

Unusual properties of C-T characteristics of hydrogen implanted and annealed Si

M. Kaniewska, I. Antonova, W. Jung, 2004 .

Diffusion of Iron and Gold in Silicon Annealed with Millisecond Pulses

I. Antonova, L. Smirnov, K. Kadyrakunov, 1983, April 16.

Conductivity model of graphene printed plates

I. Antonova, A. Cherevko, A. Cherevko, 2023, The Herald of the Siberian State University of Telecommunications and Informatics.

Benefits of Few-Layer Graphene Structures for Various Applications

I. Antonova, V. Prinz, 2016 .

Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications

I. Antonova, I. A. Kotin, S. Smagulova, 2016 .

Effect of pressure treatment on electrical properties of hydrogen-doped silicon

B. Surma, R. Job, A. Ulyashin, 1998, ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).

Deep levels and electron transport in AlGaN/GaN heterostructures

I. Antonova, K. Zhuravlev, V. Mansurov, 2008 .

Robust electrical current modulation in functionalized graphene channels

I. Antonova, E. Yakimchuk, S. Shojaei, 2021, Journal of Materials Science: Materials in Electronics.

Layered structures based on hydrogenated graphene with high carrier mobility

V. Volodin, I. Antonova, I. A. Kotin, 2013, Nanotechnologies in Russia.

Functionalization of graphene and few-layer graphene with aqueous solution of hydrofluoric acid

V. Volodin, I. Antonova, V. Prinz, 2013 .

Fluorinated graphene suspension: Creation, properties, and perspective of applications

I. Antonova, S. Smagulova, I. Kurkina, 2018 .