Feng Wen

发表

Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications

E. Tutuc, J. Shabani, Feng Wen, 2019, IEEE Transactions on Electron Devices.

Laser Spike Annealing for Shallow Junctions in Ge CMOS

S. Banerjee, A. Dolocan, Y. Wang, 2017, IEEE Transactions on Electron Devices.

Epitaxial Al-InAs Heterostructures as Platform for Josephson Junction Field-Effect Transistor Logic Devices

E. Tutuc, J. Shabani, Feng Wen, 2021, IEEE Transactions on Electron Devices.

Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

E. Tutuc, Kyounghwa Kim, Feng Wen, 2016, Nano letters.

Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires

E. Tutuc, Kyounghwa Kim, Feng Wen, 2017 .

High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing

S. Banerjee, A. Dolocan, Y. Wang, 2016, IEEE Electron Device Letters.

Mean Free Path Suppression of Low-Frequency Phonons in SiGe Nanowires.

A. McGaughey, Li Shi, E. Tutuc, 2020, Nano letters.

Strained SixGe1−x-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement

E. Tutuc, Feng Wen, 2018, Applied Physics Letters.

Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires.

E. Tutuc, Feng Wen, 2018, Nano letters.