J. Hwang

发表

Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

J. Y. Kwak, M. Spencer, Nini Munoz, 2014, Nano letters.

Ultrafast relaxation dynamics of hot optical phonons in graphene

Jiwoong Park, F. Rana, S. Shivaraman, 2009, 0909.4912.

Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts

W. Schaff, L. Brillson, J. Hwang, 2003, International Semiconductor Device Research Symposium, 2003.

Long wavelength optical response of graphene-MoS2 heterojunction

Michael G. Spencer, Joon Young Kwak, Hussain Alsalman, 2016 .

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Lester F. Eastman, Hai Lu, William J. Schaff, 2000 .

The effects of dielectric layers on SiC based epitaxial graphene in transistor applications

S. Tiwari, S. Shivaraman, M. Spencer, 2010, 10th IEEE International Conference on Nanotechnology.

Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers

W. Schaff, S. Ringel, L. Brillson, 2005 .

Compositional modulation and optical emission in AlGaN epitaxial films

Yu Cao, W. Schaff, D. Jena, 2006 .

Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking.

D. Muller, M. Spencer, Yimo Han, 2017, ACS nano.

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Lester F. Eastman, Hai Lu, William J. Schaff, 2001 .

Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

W. Schaff, Hai Lu, Hong Wu, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

W. Schaff, M. Furis, A. Cartwright, 2003 .

Local electronic and chemical structure at GaN, ALGaN and SiC heterointerfaces

W. Schaff, L. Brillson, R. Okojie, 2005 .

High frequency noise of epitaxial graphene grown on sapphire

J. Y. Kwak, L. Eastman, M. Spencer, 2013 .

Deep level defects and doping in high Al mole fraction AlGaN

W. Schaff, L. Brillson, J. Hwang, 2003 .

van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst.

J. Y. Kwak, R. Hennig, M. Rümmeli, 2013, ACS nano.

CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC

M. Spencer, M. Kim, V. Shields, 2013 .

Facile Synthesis of Porous Silicon Nanofibers by Magnesium Reduction for Application in Lithium Ion Batteries

Daehwan Cho, Y. Joo, Youngjin Jeong, 2015, Nanoscale Research Letters.

Surface cleaning and annealing effects on Ni∕AlGaN interface atomic composition and Schottky barrier height

W. Schaff, L. Brillson, J. Hwang, 2004 .

A universal transfer route for graphene.

Joon Young Kwak, J. Y. Kwak, Thomas Seyller, 2014, Nanoscale.

Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD).

G. Tompa, S. Shivaraman, M. Spencer, 2010, Journal of crystal growth.

Synthesis of large area AB stacked bilayer graphene by SiC epitaxy and transfer

J. Y. Kwak, A. Bachmatiuk, M. Spencer, 2018, Nano Futures.

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

Lori A. Lepak, S. Tiwari, M. Spencer, 2012, Nanotechnology.

Growth of 2D heterostructures of graphene/BN

Michael G. Spencer, Joon Young Kwak, Moonkyung Kim, 2014, Defense + Security Symposium.

Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures

W. Schaff, L. Brillson, J. Hwang, 2005 .

SiC surface orientation and Si loss rate effects on epitaxial graphene

S. Tiwari, M. Spencer, M. Kim, 2012, Nanoscale Research Letters.

Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection.

Ho-Young Cha, Sandip Tiwari, Jo-Won Lee, 2016, Journal of nanoscience and nanotechnology.

A high response MoS2-graphene hetero-junction photodetector with broad spectral range

J. Y. Kwak, M. Spencer, Nini Munoz, 2013, 71st Device Research Conference.

Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy

L. Eastman, W. Schaff, D. Look, 2002 .

Perturbation of charges in AlGaN/GaN heterostructures by ultraviolet laser illumination

L. Eastman, W. Schaff, H. Cha, 2004 .

Photothermal electric effect of multilayer MoS2-graphene heterojunction

J. Y. Kwak, M. Spencer, J. Hwang, 2015, 2015 73rd Annual Device Research Conference (DRC).

Chemical vapor deposition of graphene on copper at reduced temperatures

Michael G. Spencer, Gary S. Tompa, William C. Mitchel, 2012, Optics & Photonics - NanoScience + Engineering.

Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking.

D. Muller, M. Spencer, Yimo Han, 2017, ACS nano.

Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

L. Eastman, W. Schaff, B. Green, 2004 .