Q. Zhao

发表

Strained silicon nanowire array MOSFETs with high-k/metal gate stack

S. Trellenkamp, K. Bourdelle, S. Mantl, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

S. Trellenkamp, S. Mantl, S. Wirths, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

S. Trellenkamp, L. Selmi, K. Bourdelle, 2013, 2013 IEEE International Electron Devices Meeting.

Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity

A. T. Tiedemann, S. Mantl, P. Bernardy, 2016, IEEE Electron Device Letters.

Strained Si nanowire GAA n-TFETs for low supply voltages

S. Trellenkamp, K. Bourdelle, S. Mantl, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Tunnel-FET inverters for ultra-low power logic with supply voltage down to VDD = 0.2 V

S. Trellenkamp, K. Bourdelle, S. Mantl, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

LaScO 3 as a higher-κ dielectric for p-MOSFETs

K. Bourdelle, S. Mantl, A. Nichau, 2011 .

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

S. Mantl, L. Knoll, A. Nichau, 2012 .

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

S. Mantl, L. Knoll, A. Nichau, 2011, Ulis 2011 Ultimate Integration on Silicon.

Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI

K. Bourdelle, J. Hartmann, S. Mantl, 2012, IEEE Electron Device Letters.

Epitaxial CoSi 2 -nanostructures: an approach to Si nanoelectronics

S. Winnerl, S. Mantl, S. Lenk, 2002 .

Planar and nanowire Schottky barrier MOSFETs on SOI with NiSi and epitaxial NiSi2 contacts

S. Trellenkamp, K. Bourdelle, S. Mantl, 2012, 2012 12th International Workshop on Junction Technology.