C. Liu

Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

Bo Zhang, J. Hartmann, S. Mantl, 2014 .

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

M. Uren, M. Meneghini, G. Meneghesso, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Effect of Atmosphere on Electrical Characteristics of AlGaN/GaN HEMTs Under Hot-Electron Stress

Y. En, C. Liu, P. Lai, 2021, IEEE Transactions on Electron Devices.

The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

H. Chiu, W. Hsu, H. Wang, 2020, Coatings.

Study of Electron Transport Characteristics through Self-Aligned Si-Based Quantum Dots

K. Makihara, M. Ikeda, S. Miyazaki, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress

C. Liu, X. B. Xu, Y. Chen, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

G. Meneghesso, M. Meneghini, M. Tack, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).