Chung-Kuang Huang

SELF-CONSISTENT MODELING OF MOSFET QUANTUM EFFECTS BY SOLVING THE SCHRÖDINGER AND BOLTZMANN SYSTEM OF EQUATIONS

N. Goldsman, Chung-Kuang Huang, 2003 .

Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs

N. Goldsman, Chung-Kuang Huang, 2001, Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516).

Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

C. Yang, Chung-Kuang Huang, C. H. Yang, 1998 .