Zhaozhao Hou

发表

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

H. Yin, Wenwu Wang, Jiahan Yu, 2018, IEEE Journal of the Electron Devices Society.

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

Tianchun Ye, H. Yin, Huilong Zhu, 2019, IEEE Electron Device Letters.

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Jianfeng Gao, H. Yin, Qingzhu Zhang, 2018 .

The Effect of Thermal Treatment Induced Performance Improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure

H. Yin, Zhaozhao Hou, Zhenhua Wu, 2018 .

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates*

Guilei Wang, H. Yin, Qingzhu Zhang, 2017 .

Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3Tri-Layer High-κ Dielectrics and High Work Function Metal Gate

H. Yin, Zhaozhao Hou, Zhenhua Wu, 2018 .

A First Principle Study of the Carrier mobility and Injection Velocity for Strained 2D materials MOSFETs

H. Yin, Wenwu Wang, Wen Yang, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs

J. M. Gonzalez-Medina, M. Karner, Zhaozhao Hou, 2022, Solid-State Electronics.

Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

Jie Gu, Huaxiang Yin, Changliang Qin, 2017 .

Investigation of Quantum-Dot Characteristic Based on Different Bulk Silicon FinFET Device Models

H. Yin, Jie Gu, Jiaxin Yao, 2019, 2019 China Semiconductor Technology International Conference (CSTIC).

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Guilei Wang, H. Yin, Qingzhu Zhang, 2018 .