Jeff Wu

Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

Carlos H. Díaz, E. Chen, A. C. Wang, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors

Jean-Pierre Colinge, Ken-Ichi Goto, Carlos H. Diaz, 2012 .

Ab initio study of dipole-induced threshold voltage shift in HfO2/Al2O3/(100)Si

Carlos H. Díaz, E. Chen, T. Shen, 2014, 2014 International Workshop on Computational Electronics (IWCE).

A Simulation Perspective: The Potential and Limitation of Ge GAA CMOS Devices

E. Chen, Jeff Wu, S. Su, 2018, 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

A. Afzalian, M. Passlack, G. Doornbos, 2018, IEEE Journal of the Electron Devices Society.

Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

Chung-Cheng Wu, Carlos H. Díaz, T. Shen, 2015 .

Impact of SMT-induced edge dislocation positions to NFET performance

Chung-Cheng Wu, Carlos H. Díaz, T. Shen, 2015, 2015 73rd Annual Device Research Conference (DRC).