K. Hoe

发表

Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Y. Yeo, G. Samudra, N. Balasubramanian, 2008, IEEE Transactions on Electron Devices.

Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors

G. Lo, Y. Yeo, E. Toh, 2007 .

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

G. Lo, D. Kwong, W. Loh, 2006, IEEE Electron Device Letters.

Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

Y. Yeo, L. Chan, G. Samudra, 2008, IEEE Electron Device Letters.

Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-Channel Field-Effect Transistors

Y. Yeo, D. Chi, G. Samudra, 2008 .

Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing

Pooi See Lee, D. Chi, K. Pey, 2008 .

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates

S. Balakumar, G. Lo, D. Kwong, 2008 .

SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation

S. Balakumar, G. Lo, D. Kwong, 2007 .

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

S. Balakumar, N. Singh, G. Lo, 2008, IEEE Electron Device Letters.

Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors

Pooi See Lee, G. Lo, D. Chi, 2008 .

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain

G. Lo, Y. Yeo, D. Chi, 2008, IEEE Electron Device Letters.

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs

N. Singh, G. Lo, D. Kwong, 2006, 2006 International Electron Devices Meeting.

Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology

Y. Yeo, G. Samudra, N. Balasubramanian, 2007 .

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

Pooi See Lee, N. Singh, G. Lo, 2008, IEEE Electron Device Letters.

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

G. Lo, Y. Yeo, E. Toh, 2007 .

Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

Y. Yeo, G. Samudra, N. Balasubramanian, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.