H. Lee

Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness

J. Hoyt, Y. Zhu, G. Shahidi, 2012, IEEE Electron Device Letters.

RF-current de-confinement in III-V HFETs

J. Dickmann, H. Lee, E. Kohn, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

L. Eastman, H. Griem, H. Lee, 1986 .

Subthreshold current in MODFETs of tenth-micrometer gate

D. Tsui, H. Lee, A. Lepore, 1990, IEEE Electron Device Letters.

Quarter-micron gate length microwave high electron mobility transistor

L. Eastman, P. Chao, P. Smith, 1983 .

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

C. Kang, Jungwoo Oh, P. Majhi, 2007, IEEE Electron Device Letters.

Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs

M. Shur, L. Eastman, N. Cirillo, 1984 .

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

D. Jena, H. Xing, J. Encomendero, 2022, 2022 International Electron Devices Meeting (IEDM).