D. Marian

发表

Modeling of Electron Devices Based on 2-D Materials

G. Fiori, G. Iannaccone, E. G. Marín, 2018, IEEE Transactions on Electron Devices.

First-Principles Simulations of FETs Based on Two-Dimensional InSe

G. Fiori, G. Iannaccone, E. G. Marín, 2018, IEEE Electron Device Letters.

Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate

G. Fiori, G. Iannaccone, M. Perucchini, 2018, Applied Physics Letters.

First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials.

D. Marian, G. Iannaccone, G. Fiori, 2017, Nanoscale.

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

G. Fiori, G. Iannaccone, E. G. Marín, 2018, Physical Review Applied.

Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN

G. Fiori, A. Radenović, A. Kis, 2022, Advanced Electronic Materials.

Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective

G. Fiori, G. Iannaccone, E. G. Marín, 2022, Advanced Electronic Materials.

Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS_{2}.

S. Katsumoto, J. Haruyama, S. Maruyama, 2018, Physical review letters.

Time-resolved electron transport with quantum trajectories

N. Zanghí, X. Oriols, D. Marian, 2013, Journal of Computational Electronics.

Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources

X. Oriols, D. Marian, E. Colomés, 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

Quantum noise with exchange and tunnelling: predictions for a two-particle scattering experiment with time-dependent oscillatory potentials

X. Oriols, D. Marian, E. Colomés, 2015, 1511.00608.

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

G. Fiori, G. Iannaccone, Xuefei Li, 2023, Science advances.

Weak Values from Displacement Currents in Multiterminal Electron Devices.

N. Zanghí, X. Oriols, D. Marian, 2015, Physical review letters.

Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices

G. Fiori, D. Marian, Prabhat Kumar Dubey, 2023, IEEE Transactions on Electron Devices.

Time-dependent simulation of particle and displacement currents in THz graphene transistors

X. Oriols, D. Marian, Z. Zhan, 2015, 1511.05515.

Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices

X. Oriols, D. Marian, Z. Zhan, 2017, 1707.05990.

Electron Devices Simulation with Bohmian Trajectories

X. Oriols, A. Alarcón, G. Albareda, 2016 .

Electrically tunable lateral spin-valve transistor based on bilayer CrI_3

G. Fiori, E. G. Marín, D. Marian, 2023, npj 2D Materials and Applications.

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

G. Fiori, G. Iannaccone, E. G. Marín, 2023, Journal of Computational Electronics.

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

G. Fiori, G. Iannaccone, E. G. Marín, 2020, ACS nano.

Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces

G. Fiori, G. Iannaccone, E. G. Marín, 2021, Scientific Reports.

Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons

G. Fiori, G. Iannaccone, E. G. Marín, 2020 .

Reformulation of quantum noise: when indistinguishable becomes distinguishable?

X. Oriols, D. Marian, E. Colomés, 2015, 2015 International Workshop on Computational Electronics (IWCE).

Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices?

X. Oriols, D. Marian, E. Colomés, 2015 .

How does Quantum Uncertainty Emerge from Deterministic Bohmian Mechanics

N. Zanghí, X. Oriols, D. Marian, 2016, 1610.01138.

Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices

X. Oriols, D. Marian, E. Colomés, 2015, Journal of Computational Electronics.

Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices

D. Marian, E. Colomés, Z. Zhan, 2014, 1410.0530.

On the back-action of THz measurement on the total current of quantum devices

N. Zanghí, X. Oriols, D. Marian, 2014, 2014 International Workshop on Computational Electronics (IWCE).

Time-resolved electron transport with quantum trajectories

N. Zanghí, X. Oriols, G. Albareda, 2013 .

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

G. Fiori, G. Iannaccone, A. Radenović, 2023, 2304.01177.

Two-dimensional transistors based on MoS2 lateral heterostructures

D. Marian, E. Dib, T. Cusati, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Weak measurement from the electron displacement current: new path for applications

N. Zanghí, X. Oriols, D. Marian, 2015 .

Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors

E. G. Marín, D. Marian, Emmanuele Cannavò, 2024, IEEE Transactions on Electron Devices.