R. Zhukavin

发表

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

S. Pavlov, H. Hübers, V. Shastin, 2015 .

On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon

V. Shastin, R. Zhukavin, V. V. Tsyplenkov, 2014 .

Shallow-donor lasers in uniaxially stressed silicon

H. Riemann, S. Pavlov, H. Hübers, 2013 .

Lifetimes of operating states in terahertz intracenter silicon lasers

P. J. Phillips, S. Pavlov, V. Shastin, 2009, 2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications.

Terahertz optically pumped Si:Sb laser

H. Riemann, S. Pavlov, H. Hübers, 2002 .

Low-threshold terahertz Si:As laser

H. Riemann, V. Shastin, K. Kovalevsky, 2007 .

Terahertz emission at impurity electrical breakdown in Si(Li)

V. Shastin, R. Zhukavin, N. Abrosimov, 2016 .

Terahertz intracenter photoluminescence of silicon with lithium at interband excitation

A. Bobylev, V. Shastin, R. Zhukavin, 2015 .

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

A. N. Yablonsky, R. Zhukavin, D. Yurasov, 2016 .

Far-infrared stimulated emission from optically excited bismuth donors in silicon

H. Riemann, S. Pavlov, H. Hübers, 2002 .

Terahertz Emission Spectra of Optically Pumped Silicon Lasers

H. Riemann, M. Kimmitt, H. Hübers, 2002 .

Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation

H. Riemann, I. Bradley, S. Pavlov, 2002 .

Stimulated terahertz emission from arsenic donors in silicon

H. Riemann, H. Hübers, V. Shastin, 2004 .

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi

H. Riemann, S. Pavlov, H. Hübers, 2020 .

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation

H. Riemann, B. Redlich, V. Shastin, 2019, Semiconductors.

Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

H. Riemann, S. Pavlov, H. Hübers, 2007 .

Dynamics of non‐equilibrium charge carriers in p‐germanium doped by gallium

S. Winnerl, H. Schneider, H. Hübers, 2017 .

Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers

S. Winnerl, S. Pavlov, V. Shastin, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors

R. Zhukavin, 2022, Semiconductors.

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

H. Riemann, H. Hübers, B. Redlich, 2018, Physical Review X.

THz oscillators based on intraband transitions in bulk semiconductors

Valery N. Shastin, Andrei V. Muravjov, Ekaterina E. Orlova, 1999, Industrial Lasers and Inspection.

Lifetime-limited, subnanosecond terahertz germanium photoconductive detectors

S. Winnerl, S. Pavlov, H. Hübers, 2015 .

The relaxation times of donor bound electrons in germanium

S. Pavlov, H. Hübers, B. Knyazev, 2020 .

Terahertz emission from silicon doped by shallow impurities

H. Riemann, H. Hübers, M. Rümmeli, 2001 .

Terahertz Raman laser based on silicon doped by phosphorus

H. Riemann, B. Redlich, V. Shastin, 2008, 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves.

Terahertz pump — Terahertz probe system at Novosibirsk free electron laser: Commissioning and results of first experiments

G. N. Kulipanov, H. Schneider, B. Knyazev, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

First terahertz-range experiments on pump – probe setup at Novosibirsk free electron laser

G. N. Kulipanov, H. Schneider, H. Hübers, 2016 .

Transient THz stimulated emission from silicon pumped by FELs

S. Pavlov, H. Hübers, R. Zhukavin, 2017, 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Terahertz stimulated emission from silicon doped by hydrogenlike acceptors

S. Winnerl, H. Riemann, S. Pavlov, 2014 .

Terahertz silicon lasers based on intracenter impurity transitions

H. Hübers, V. Shastin, R. Zhukavin, 2014 .

Optimizing the Operation of Terahertz Silicon Lasers

S. Pavlov, V. Shastin, K. Kovalevsky, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

S. Pavlov, H. Hübers, B. Redlich, 2008 .

Terahertz gain on shallow donor transitions in silicon

S. Pavlov, H. Hübers, J. Hovenier, 2007 .

Nonequilibrium electron distribution in terahertz intracentre silicon lasers

S. Pavlov, H. Hübers, V. Shastin, 2004 .

The resolved terahertz emission in Si:P under resonant pumping of donor centres with picosecond optical pulses

P. J. Phillips, H. Riemann, S. Pavlov, 2004 .

The silicon lasers based on impurity state transitions

S. Pavlov, V. Shastin, R. Zhukavin, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Generation of THz emission from donor centers in silicon under intracenter optical pumping

H. Riemann, S. Pavlov, B. Redlich, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Stimulated THz emission from resonant intra-center optical pumped Si : P and Si : Bi .

D. M. Gaponova, H. Riemann, S. Pavlov, 2003 .

Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Twenty Seventh International Conference on Infrared and Millimeter Waves.

The emission spectra of optically pumped Si-based THz lasers

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Proceedings, IEEE Tenth International Conference on Terahertz Electronics.

The physics of optically pumped semiconductor bulk lasers for the 5-15 THz frequency range

S. Pavlov, H. Hübers, M. Rümmeli, 2001 .

FIR lasing based on group V donor transitions in silicon

H. Riemann, H. Hübers, M. Rümmeli, 2001 .

Excitation of intracenter terahertz radiation by plasma oscillations in electron–hole liquid

V. Shastin, N. Abrosimov, R. Zhukavin, 2022, Materials Science and Engineering: B.

FEL-based study of intervalley elastic scattering of donor excited states in multivalley semiconductors.

S. Pavlov, H. Hübers, V. Shastin, 2016 .

Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

V. Shastin, N. Abrosimov, R. Zhukavin, 2015 .

Possibility of THz donor lasing in electrically pumped silicon

S. Pavlov, V. Shastin, R. Zhukavin, 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

D− centers in intracenter Si:P lasers

H. Riemann, H. Hübers, V. Shastin, 2005 .

Gain in silicon lasers based on shallow donor transitions

J. Hovenier, T. Klaassen, V. Shastin, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Optically pumped terahertz semiconductor bulk lasers

H. Riemann, H. Hübers, H. Nakata, 2003 .

Silicon Lasers Based On Shallow Donor Centres

H. Riemann, S. Pavlov, H. Hübers, 2003 .

Optically pumped terahertz silicon lasers

H. Riemann, S. Pavlov, V. Shastin, 2002, Proceedings, IEEE Tenth International Conference on Terahertz Electronics.

TERAHERTZ PHOTONICS AND SPECTROSCOPY ON NOVOSIBIRSK FREE ELECTRON LASER

B. Knyazev, V. Pavelyev, R. Zhukavin, 2020 .

Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

H. Riemann, N. Abrosimov, P. Becker, 2013 .

Influence of group II and III shallow acceptors on the gain of p-Ge lasers

S. Pavlov, H. Hübers, A. Muravjov, 2001 .